Si7964DP Datasheet

Si7964DP
Vishay Siliconix
Dual N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
60
0.023 at VGS = 10 V
9.6
43
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package
• Dual MOSFET for Space Savings
• 100 % Rg Tested
• High Threshold Voltage at High Temperature
PowerPAK SO-8
S1
6.15 mm
5.15 mm
1
D1
G1
2
D2
S2
3
G2
4
D1
8
D1
7
G1
D2
6
G2
D2
5
Bottom View
Ordering Information: Si7964DP-T1-E3 (Lead (Pb)-free)
Si7964DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Avalanche Current
Single Avalanche Energy
L = 0.1 mH
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
10 s
9.6
7.7
2.9
3.5
2.2
Steady State
60
± 20
6.1
4.9
40
1.2
25
31
1.4
0.9
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
1
Si7964DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
3.4
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistance
a
4.5
V
± 100
nA
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 55 °C
5
ID(on)
VDS ≥ 5 V, VGS = 10 V
RDS(on)
VGS = 10 V, ID = 9.6 A
gfs
VDS = 15 V, ID = 9.6 A
30
VSD
IS = 2.9 A, VGS = 0 V
0.8
1.2
43
65
VDS = 30 V, VGS = 10 V, ID = 9.6 A
15
a
Forward Transconductance
Diode Forward Voltagea
µA
30
A
0.019
Ω
0.023
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
8.5
f = 1 MHz
1
td(on)
Turn-On Delay Time
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = 2.9 A, dI/dt = 100 A/µs
2
3
20
30
15
25
50
75
15
25
35
60
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
40
VGS = 10 thru 7 V
6V
32
I D - Drain Current (A)
I D - Drain Current (A)
32
24
16
24
16
TC = 125 °C
8
8
5V
25 °C
- 55 °C
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
5
0
1
2
VGS -
3
4
5
6
7
Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
Si7964DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4000
Capacitance (pF)
0.025
VGS = 10 V
0.020
0.015
-
Ciss
3200
2400
1600
C
R DS(on)
-
On-Resistance (Ω)
0.030
0.010
800
0.005
0
0.000
0
5
10
15
ID
-
20
25
30
35
0
40
10
20
VDS
Drain Current (A)
On-Resistance vs. Drain Current
VDS = 30 V
ID = 9.6 A
50
6
Drain-to-Source Voltage (V)
VGS = 10 V
ID = 9.6 A
1.6
8
R DS(on) - On-Resistance
(Normalized)
Gate-to-Source Voltage (V)
40
1.8
6
4
V GS
-
30
Capacitance
10
2
1.4
1.2
1.0
0.8
0.6
0
0
10
20
Qg
-
30
40
- 50 - 25
50
25
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.05
On-Resistance (Ω)
40
TJ = 150 °C
TJ = 25 °C
IS
-
RDS(on)
-
10
1
0.0
0
TJ - Junction Temperature ( °C)
Total Gate Charge (nC)
Gate Charge
Source Current (A)
Crss
Coss
0.04
ID = 9.6 A
0.03
0.02
0.01
0.00
0.3
VSD
0.6
-
0.9
1.2
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7964DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
100
80
ID = 250 µA
0.0
60
Power (W)
V GS(th) Variance (V)
0.4
- 0.4
40
- 0.8
20
- 1.2
- 1.6
- 50 - 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
10
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
100
IDM Limited
Limited by RDS(on)*
P(t) = 0.0001
P(t) = 0.001
ID(on)
Limited
1
P(t) = 0.01
P(t) = 0.1
ID
-
Drain Current (A)
10
TA = 25 °C
Single Pulse
0.1
P(t) = 1
P(t) = 10
0.01
0.1
BVDSS Limited
1
10
dc
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 60 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
Si7964DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73101.
Document Number: 73101
S09-0272-Rev. C, 16-Feb-09
www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000