Si7964DP Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.023 at VGS = 10 V 9.6 43 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package • Dual MOSFET for Space Savings • 100 % Rg Tested • High Threshold Voltage at High Temperature PowerPAK SO-8 S1 6.15 mm 5.15 mm 1 D1 G1 2 D2 S2 3 G2 4 D1 8 D1 7 G1 D2 6 G2 D2 5 Bottom View Ordering Information: Si7964DP-T1-E3 (Lead (Pb)-free) Si7964DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy L = 0.1 mH Maximum Power Dissipationa TA = 25 °C TA = 70 °C ID IDM IS IAS EAS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s 9.6 7.7 2.9 3.5 2.2 Steady State 60 ± 20 6.1 4.9 40 1.2 25 31 1.4 0.9 - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Steady State RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73101 S09-0272-Rev. C, 16-Feb-09 www.vishay.com 1 Si7964DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. 3.4 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistance a 4.5 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 5 ID(on) VDS ≥ 5 V, VGS = 10 V RDS(on) VGS = 10 V, ID = 9.6 A gfs VDS = 15 V, ID = 9.6 A 30 VSD IS = 2.9 A, VGS = 0 V 0.8 1.2 43 65 VDS = 30 V, VGS = 10 V, ID = 9.6 A 15 a Forward Transconductance Diode Forward Voltagea µA 30 A 0.019 Ω 0.023 S V b Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 8.5 f = 1 MHz 1 td(on) Turn-On Delay Time VDD = 20 V, RL = 20 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC IF = 2.9 A, dI/dt = 100 A/µs 2 3 20 30 15 25 50 75 15 25 35 60 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 thru 7 V 6V 32 I D - Drain Current (A) I D - Drain Current (A) 32 24 16 24 16 TC = 125 °C 8 8 5V 25 °C - 55 °C 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 1 2 VGS - 3 4 5 6 7 Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73101 S09-0272-Rev. C, 16-Feb-09 Si7964DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4000 Capacitance (pF) 0.025 VGS = 10 V 0.020 0.015 - Ciss 3200 2400 1600 C R DS(on) - On-Resistance (Ω) 0.030 0.010 800 0.005 0 0.000 0 5 10 15 ID - 20 25 30 35 0 40 10 20 VDS Drain Current (A) On-Resistance vs. Drain Current VDS = 30 V ID = 9.6 A 50 6 Drain-to-Source Voltage (V) VGS = 10 V ID = 9.6 A 1.6 8 R DS(on) - On-Resistance (Normalized) Gate-to-Source Voltage (V) 40 1.8 6 4 V GS - 30 Capacitance 10 2 1.4 1.2 1.0 0.8 0.6 0 0 10 20 Qg - 30 40 - 50 - 25 50 25 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.05 On-Resistance (Ω) 40 TJ = 150 °C TJ = 25 °C IS - RDS(on) - 10 1 0.0 0 TJ - Junction Temperature ( °C) Total Gate Charge (nC) Gate Charge Source Current (A) Crss Coss 0.04 ID = 9.6 A 0.03 0.02 0.01 0.00 0.3 VSD 0.6 - 0.9 1.2 Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73101 S09-0272-Rev. C, 16-Feb-09 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7964DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 100 80 ID = 250 µA 0.0 60 Power (W) V GS(th) Variance (V) 0.4 - 0.4 40 - 0.8 20 - 1.2 - 1.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 IDM Limited Limited by RDS(on)* P(t) = 0.0001 P(t) = 0.001 ID(on) Limited 1 P(t) = 0.01 P(t) = 0.1 ID - Drain Current (A) 10 TA = 25 °C Single Pulse 0.1 P(t) = 1 P(t) = 10 0.01 0.1 BVDSS Limited 1 10 dc 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 60 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73101 S09-0272-Rev. C, 16-Feb-09 Si7964DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73101. Document Number: 73101 S09-0272-Rev. 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