Si4488DY Datasheet

Si4488DY
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
150
0.050 at VGS = 10 V
5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Compliant to RoHS Directive 2002/95/EC
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4488DY-T1-E3 (Lead (Pb)-free)
Si4488DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
150
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Avalanche Current
L = 0.1 mH
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
TA = 25 °C
TA = 70 °C
5.0
2.8
IAS
25
A
2.8
1.4
3.1
1.56
2.0
1.0
TJ, Tstg
Operating Junction and Storage Temperature Range
3.5
50
PD
V
4.0
IDM
IS
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
33
40
65
80
17
21
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
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1
Si4488DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
2.0
Typ.
Max.
Unit
± 100
nA
Static
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
Gate Threshold Voltage
On-State Drain Currenta
VDS = 120 V, VGS = 0 V
1
VDS = 120 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
ID(on)
Drain-Source On-State Resistance
a
A
VGS = 10 V, ID = 5 A
gfs
VDS = 15 V, ID = 5 A
18
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.1
30
36
VDS = 75 V, VGS = 10 V, ID = 5 A
8.5
Forward Transconductance
µA
50
RDS(on)
a
Diode Forward Voltagea
V
0.041
Ω
0.050
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
8.5
0.2
0.85
1.2
12
18
td(on)
Turn-On Delay Time
VDD = 75 V, RL = 15 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 6 Ω
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = 2.8 A, dI/dt = 100 A/µs
7
11
22
33
10
15
40
70
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 V thru 7 V
40
6V
ID - Drain Current (A)
ID - Drain Current (A)
40
30
20
10
30
20
TC = 125 °C
10
25 °C
5V
- 55 °C
3, 4 V
0
0
0
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2
2
4
6
8
10
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
7
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3000
0.10
2500
C - Capacitance (pF)
0.08
0.06
RDS(on) -
VGS = 10 V
0.04
0.02
2000
Ciss
1500
1000
Crss
500
Coss
0
0.00
0
10
20
30
40
0
50
30
60
120
150
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2.5
20
VGS = 10 V
ID = 5 A
VDS = 75 V
ID = 5 A
2.0
16
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
90
12
8
1.5
1.0
0.5
4
0.0
- 50
0
0
15
30
45
60
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
50
150
0.15
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.12
TJ = 150 °C
10
TJ = 25 °C
1
0.0
ID = 5 A
0.09
0.06
0.03
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
100
ID = 250 µA
I DAV (A)
VGS(th) Variance (V)
0.5
0.0
T = 25 °C
10
- 0.5
T = 125 °C
1
- 1.0
- 1.5
- 50
- 25
0
25
50
75
100
125
0.1
10 -5
150
10 -4
10 -3
10 -2
10 -1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Avalanche Current vs. Time
1
60
50
Power (W)
40
30
20
10
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
Si4488DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71240.
Document Number: 71240
S09-0705-Rev. C, 27-Apr-09
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Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
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Document Number: 91000