Si7444DP Datasheet

Si7444DP
Vishay Siliconix
N-Channel 40-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
40
0.0061 at VGS = 10 V
23.6
105
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• 100 % Rg Tested
• High Threshold Voltage at High Temperature
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
D
4
D
8
D
7
D
6
G
D
5
Bottom View
S
Ordering Information: Si7444DP-T1-E3 (Lead (Pb)-free)
Si7444DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
IDM
IS
IAS
EAS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Avalanche Energy
TA = 25 °C
TA = 70 °C
Maximum Power Dissipationa
ID
PD
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
10 s
23.6
18.9
4.5
5.4
3.4
Steady State
40
± 20
14
11.2
60
1.6
45
100
1.9
1.2
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Symbol
a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
RthJA
RthJC
Typical
18
52
1.0
Maximum
23
65
1.3
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
www.vishay.com
1
Si7444DP
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Gate Threshold Voltage
Test Condition
Min.
3.4
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = 250 µA
4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
IDSS
VDS = 40 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V, TJ = 55 °C
5
VDS ≥ 5 V, VGS = 10 V
ID(on)
On-State Drain Currenta
Drain-Source On-State Resistance
a
a
Forward Transconductance
Diode Forward Voltagea
µA
40
A
RDS(on)
VGS = 10 V, ID = 23.6 A
0.005
gfs
VDS = 15 V, ID = 23.6 A
56
VSD
IS = 4.5 A, VGS = 0 V
0.76
1.2
105
160
VDS = 20 V, VGS = 10 V, ID = 23.6 A
39.4
Ω
0.0061
S
V
b
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
21.7
f = 1 MHz
0.5
1.0
1.5
45
70
td(on)
Rise Time
VDD = 20 V, RL = 20 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
IF = 4.5 A, dI/dt = 100 A/µs
30
45
90
135
45
70
45
70
Ω
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
60
VGS = 10 V thru 6 V
50
40
I D - Drain Current (A)
I D - Drain Current (A)
50
30
20
10
40
30
20
TC = 125 °C
10
25 °C
5V
- 55 °C
0
0.0
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2
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
6
7
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
Si7444DP
Vishay Siliconix
10000
0.008
8000
0.006
Capacitance (pF)
0.010
VGS = 10 V
6000
4000
-
0.004
Ciss
C
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Coss
0.002
2000
0.000
Crss
0
0
10
20
ID
30
-
40
50
60
0
5
Drain Current (A)
10
VDS
-
On-Resistance vs. Drain Current
25
30
35
40
125
150
Drain-to-Source Voltage (V)
1.8
VDS = 20 V
ID = 23.6 A
VGS = 10 V
ID = 23.6 A
1.6
RDS(on) - On-Resistance
(Normalized)
8
6
4
-
Gate-to-Source Voltage (V)
20
Capacitance
10
V GS
15
2
1.4
1.2
1.0
0.8
0.6
0
0
20
40
Qg
-
60
80
100
- 50
120
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.040
60
RDS(on) - On-Resistance (Ω)
TJ = 150 °C
10
-
Source Current (A)
0.035
IS
TJ = 25 °C
0.030
0.025
ID = 23.6 A
0.020
0.015
0.010
0.005
1
0.0
0.000
0.2
0.4
VSD
-
0.6
0.8
1.0
Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.6
100
0.4
ID = 250 μA
80
- 0.0
Power (W)
V GS(th) Variance (V)
0.2
- 0.2
- 0.4
- 0.6
60
40
- 0.8
- 1.0
20
- 1.2
- 1.4
- 50
0
- 25
0
25
50
75
100
125
150
1
0.1
0.01
TJ - Temperature ( ˚C)
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
IDM
Limited
100
Limited by RDS(on)*
I D - Drain Current (A)
10
P(t) = 0.001
P(t) = 0.01
ID(on)
Limited
1
P(t) = 0.1
P(t) = 1
TA = 25°C
Single Pulse
0.1
P(t) = 10
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 52 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
Si7444DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
Normalized Thermal Transient Impedance, Junction-to-Case
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72920.
Document Number: 72920
S09-0273-Rev. D, 16-Feb-09
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Revision: 02-Oct-12
1
Document Number: 91000