Si1419DH Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) (Ω) ID (A) 5.0 at VGS = - 10 V - 0.38 5.1 at VGS = - 6 V - 0.37 Qg (Typ.) 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETS • Small, Thermally Enhanced SC-70 Package • Ultra Low On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) • Active Clamp Circuits in dc-to-dc Power Supplies S D 1 6 D D 2 5 D G 3 4 BH XX YY Marking Code G Lot Traceability and Date Code S Part # Code Top View D Ordering Information: Si1419DH-T1-E3 (Lead (Pb)-free) Si1419DH-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 200 Gate-Source Voltage VGS ± 20 TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 85 °C Pulsed Drain Current ID - 0.3 - 0.27 - 0.22 Continuous Diode Current (Diode Conduction) IS IAS - 1.9 EAS 0.18 Maximum Power Dissipationa L = 0.1 mH TA = 25 °C TA = 85 °C PD - 1.3 - 0.83 mJ 1.56 1.0 0.81 0.52 TJ, Tstg Operating Junction and Storage Temperature Range A - 0.5 Single Pulse Avalanche Current Single Pulse Avalanche Energy V - 0.38 IDM a Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 73241 S10-0646-Rev. C, 22-Mar-10 www.vishay.com 1 Si1419DH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 2.5 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 100 µA - 4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 200 V, VGS = 0 V -1 VDS = - 200 V, VGS = 0 V, TJ = 85 °C -5 On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea VDS = - 15 V, VGS = - 10 V RDS(on) Forward Transconductancea Diode Forward Voltagea µA - 0.5 A VGS = - 10 V, ID = - 0.4 A 3.98 5.0 VGS = - 6 V, ID = - 0.4 A 4.06 5.1 gfs VDS = - 10 V, ID = - 0.4 A 1.0 VSD IS = - 0.4 A, VGS = 0 V - 0.80 - 1.1 4.1 6.2 VDS = - 100 V, VGS = - 10 V, ID = - 0.4 A 0.8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time 1.3 f = 1.0 MHz 6 VDD = - 100 V, RL = 100 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Turn-Off Delay Time Ω 17 td(on) Rise Time nC td(off) 9 12 18 12 18 18 Fall Time tf 12 Reverse Recovery Time trr 55 83 Body Diode Reverse Recovery Charge Qrr 130 200 IF = - 0.4 A, dI/dt = 100 A/µs ns nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 0.5 VGS = 10 V thru 5 V 0.4 ID - Drain Current (A) I D - Drain Current (A) 0.4 0.3 0.2 4V 0.3 0.2 TC = 125 °C 0.1 0.1 25 °C - 55 °C 0.0 0.0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 73241 S10-0646-Rev. C, 22-Mar-10 Si1419DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 250 200 6 5 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 7 VGS = 6 V 4 VGS = 10 V 3 Ciss 150 100 2 50 Crss 1 Coss 0 0.0 0 0.1 0.2 0.3 0.4 0.5 0 30 ID - Drain Current (A) 60 150 Capacitance 10 2.2 VGS = 100 V ID = 0.4 A 8 VGS = 10 V ID = 0.4 A 1.9 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 120 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 6 4 2 1.6 1.3 1.0 0.7 0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 0.4 - 50 4.2 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 12 2 1 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 90 TJ = 150 °C TJ = 25 °C 0.1 8 ID = 0.4 A 6 4 2 0 0.01 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 73241 S10-0646-Rev. C, 22-Mar-10 1.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si1419DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 12 ID = 250 µA 10 TA = 25 °C Single Pulse 8 0.4 Power (W) VGS(th) Variance (V) 0.7 0.1 6 4 - 0.2 2 - 0.5 - 50 - 25 0 25 50 75 100 125 0 0.01 150 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1 10 µs I D - Drain Current (A) Limited by RDS(on)* 100 µs 1 ms 0.1 10 ms 100 ms 0.01 0.001 0.1 1 s, 10 s TA = 25 °C Single Pulse 100 s, DC 10 1000 1 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 100 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 73241 S10-0646-Rev. C, 22-Mar-10 Si1419DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73241. Document Number: 73241 S10-0646-Rev. 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