Si1419DH Datasheet

Si1419DH
Vishay Siliconix
P-Channel 200 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 200
RDS(on) (Ω)
ID (A)
5.0 at VGS = - 10 V
- 0.38
5.1 at VGS = - 6 V
- 0.37
Qg (Typ.)
4.1
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETS
• Small, Thermally Enhanced SC-70 Package
• Ultra Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
• Active Clamp Circuits in dc-to-dc Power Supplies
S
D
1
6
D
D
2
5
D
G
3
4
BH
XX
YY
Marking Code
G
Lot Traceability
and Date Code
S
Part # Code
Top View
D
Ordering Information: Si1419DH-T1-E3 (Lead (Pb)-free)
Si1419DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 200
Gate-Source Voltage
VGS
± 20
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)a
TA = 85 °C
Pulsed Drain Current
ID
- 0.3
- 0.27
- 0.22
Continuous Diode Current (Diode Conduction)
IS
IAS
- 1.9
EAS
0.18
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 85 °C
PD
- 1.3
- 0.83
mJ
1.56
1.0
0.81
0.52
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 0.5
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
V
- 0.38
IDM
a
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
60
80
100
125
34
45
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
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1
Si1419DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 2.5
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 100 µA
- 4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 200 V, VGS = 0 V
-1
VDS = - 200 V, VGS = 0 V, TJ = 85 °C
-5
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
VDS = - 15 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
Diode Forward Voltagea
µA
- 0.5
A
VGS = - 10 V, ID = - 0.4 A
3.98
5.0
VGS = - 6 V, ID = - 0.4 A
4.06
5.1
gfs
VDS = - 10 V, ID = - 0.4 A
1.0
VSD
IS = - 0.4 A, VGS = 0 V
- 0.80
- 1.1
4.1
6.2
VDS = - 100 V, VGS = - 10 V, ID = - 0.4 A
0.8
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
1.3
f = 1.0 MHz
6
VDD = - 100 V, RL = 100 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω
tr
Turn-Off Delay Time
Ω
17
td(on)
Rise Time
nC
td(off)
9
12
18
12
18
18
Fall Time
tf
12
Reverse Recovery Time
trr
55
83
Body Diode Reverse Recovery Charge
Qrr
130
200
IF = - 0.4 A, dI/dt = 100 A/µs
ns
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.5
0.5
VGS = 10 V thru 5 V
0.4
ID - Drain Current (A)
I D - Drain Current (A)
0.4
0.3
0.2
4V
0.3
0.2
TC = 125 °C
0.1
0.1
25 °C
- 55 °C
0.0
0.0
0
2
4
6
8
VDS - Drain-to-Source Voltage (V)
Output Characteristics
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2
10
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
Si1419DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
250
200
6
5
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
7
VGS = 6 V
4
VGS = 10 V
3
Ciss
150
100
2
50
Crss
1
Coss
0
0.0
0
0.1
0.2
0.3
0.4
0.5
0
30
ID - Drain Current (A)
60
150
Capacitance
10
2.2
VGS = 100 V
ID = 0.4 A
8
VGS = 10 V
ID = 0.4 A
1.9
R DS(on) - On-Resistance
(Normalized)
V GS - Gate-to-Source Voltage (V)
120
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
6
4
2
1.6
1.3
1.0
0.7
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
0.4
- 50
4.2
- 25
0
Qg - Total Gate Charge (nC)
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
12
2
1
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
90
TJ = 150 °C
TJ = 25 °C
0.1
8
ID = 0.4 A
6
4
2
0
0.01
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
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Si1419DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
12
ID = 250 µA
10
TA = 25 °C
Single Pulse
8
0.4
Power (W)
VGS(th) Variance (V)
0.7
0.1
6
4
- 0.2
2
- 0.5
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
TJ - Temperature (°C)
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1
10 µs
I D - Drain Current (A)
Limited by
RDS(on)*
100 µs
1 ms
0.1
10 ms
100 ms
0.01
0.001
0.1
1 s, 10 s
TA = 25 °C
Single Pulse
100 s, DC
10
1000
1
100
V DS - Drain-to-Source Voltage (V)
* V GS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 100 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
Si1419DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73241.
Document Number: 73241
S10-0646-Rev. C, 22-Mar-10
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Revision: 02-Oct-12
1
Document Number: 91000