VISHAY SI6544BDQ_08

Si6544BDQ
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
- 30
RDS(on) (Ω)
ID (A)
0.032 at VGS = 10 V
4.3
0.046 at VGS = 4.5 V
3.7
0.043 at VGS = - 10 V
- 3.8
0.073 at VGS = - 4.5 V
- 2.8
• Halogen-free
• TrenchFET® Power MOSFETS
RoHS
COMPLIANT
D1
S2
TSSOP-8
D1
1
S1
2
S1
3
G1
4
G2
G1
8 D2
7 S2
6 S2
5 G2
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Top View
Ordering Information: Si6544BDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
P-Channel
Steady State
10 s
30
Steady State
- 30
4.3
3.5
3.7
- 3.8
3.0
- 3.0
20
- 3.8
- 2.6
- 20
1.0
0.7
- 1.0
- 0.7
1.14
0.83
1.14
0.83
0.73
0.53
0.73
0.53
TJ, Tstg
Unit
V
± 20
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
N-Channel
10 s
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t ≤ 10 s
Steady State
RthJA
RthJF
Typical
Maximum
88
110
120
150
65
80
Unit
°C/W
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 72244
S-81056-Rev. B, 12-May-08
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Si6544BDQ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
N-Ch
1.0
3.0
P-Ch
- 1.0
- 3.0
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
n-ch
± 100
N-Ch
± 100
VDS = 30 V, VGS = 0 V
P-Ch
1
VDS = - 30 V, VGS = 0 V
N-Ch
-1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
P-Ch
5
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
N-Ch
VDS ≥ 5 V, VGS = 10 V
P-Ch
20
VDS ≥ - 5 V, VGS = - 10 V
N-Ch
- 20
ID(on)
RDS(on)
gfs
VSD
V
nA
µA
-5
A
VGS = 10 V, ID = 4.3 A
P-Ch
0.025
0.032
VGS = - 10 V, ID = - 3.8 A
N-Ch
0.034
0.043
VGS = 4.5 V, ID = 3.7 A
P-Ch
0.037
0.046
VGS = - 4.5 V, ID = - 2.8 A
N-Ch
0.058
0.073
VDS = 15 V, ID = 4.3 A
P-Ch
11
VDS = - 15 V, ID = - 3.8 A
N-Ch
11
Ω
S
IS = 1.25 A, VGS = 0 V
P-Ch
0.77
1.1
IS = - 1.25 A, VGS = 0 V
N-Ch
- 0.77
- 1.1
N-Ch
9.5
15
P-Ch
16
25
N-Ch
1.8
P-Ch
2.3
N-Ch
1.55
V
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Qg
N-Channel
VDS = 15 V, VGS = 10 V, ID = 4.3 A
Qgs
Qgd
P-Channel
VDS = - 15 V, VGS = - 10 V, ID = - 3.8 A
Rg
td(on)
tr
td(off)
Fall Time
tf
Source-Drain
Reverse Recovery Time
trr
N-Channel
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
P-Channel
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
P-Ch
4.5
N-Ch
0.45
P-Ch
8.8
nC
Ω
N-Ch
13
25
P-Ch
14
25
N-Ch
14
25
P-Ch
14
25
N-Ch
30
50
P-Ch
40
65
N-Ch
10
20
P-Ch
30
50
IF = 1.25 A, dI/dt = 100 A/µs
N-Ch
30
60
IF = - 1.25 A, dI/dt = 100 A/µs
P-Ch
30
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72244
S-81056-Rev. B, 12-May-08
Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
20
VGS = 10 thru 5 V
20
4V
16
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
4
12
8
TC = 125 °C
4
3V
25 °C
- 55 °C
0
0
1
2
3
4
0
0.0
5
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.080
4.0
4.5
C - Capacitance (pF)
1100
0.064
0.048
VGS = 4.5 V
RDS(on) -
0.5
VDS - Drain-to-Source Voltage (V)
VGS = 10 V
0.032
0.016
880
Ciss
660
440
Coss
220
Crss
0.000
0
0
4
8
12
16
20
0
6
ID - Drain Current (A)
12
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VGS = 10 V
ID = 4.3 A
VDS = 15 V
ID = 4.3 A
1.4
- On-Resistance
6
DS(on)
4
(Normalized)
8
1.2
1.0
R
V GS - Gate-to-Source Voltage (V)
18
0.8
2
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 72244
S-81056-Rev. B, 12-May-08
8
10
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.15
20
TJ = 150 °C
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
10
TJ = 25 °C
1
0.12
ID = 4.3 A
0.09
0.06
0.03
0.00
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
4
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.4
200
0.2
0.0
Power (W)
V GS(th) Variance (V)
160
ID = 250 µA
- 0.2
120
80
- 0.4
40
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
0
10 -3
150
10 -2
TJ - Temperature (°C)
10 -1
1
10
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS(on) *
ID - Drain Current (A)
10
1 ms
1
10 ms
0.1
TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 72244
S-81056-Rev. B, 12-May-08
Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72244
S-81056-Rev. B, 12-May-08
www.vishay.com
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Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
20
VGS = 10 thru 5 V
16
4V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
12
8
TC = 125 °C
4
4
3V
25 °C
0
0.0
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4.5
1100
C - Capacitance (pF)
0.15
RDS(on) - On-Resistance (Ω)
0.5
- 55 °C
0.12
0.09
VGS = 4.5 V
0.06
880
Ciss
660
440
VGS = 10 V
Coss
220
0.03
Crss
0
0.00
0
4
8
12
16
0
20
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
1.6
10
VGS = 10 V
ID = 3.8 A
VDS = 15 V
ID = 3.8 A
1.4
- On-Resistance
6
DS(on)
4
(Normalized)
8
1.2
1.0
R
V GS - Gate-to-Source Voltage (V)
18
0.8
2
0
0.0
3.2
6.4
9.6
Qg - Total Gate Charge (nC)
Gate Charge
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6
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72244
S-81056-Rev. B, 12-May-08
Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
20
10
- On-Resistance (Ω)
TJ = 150 °C
TJ = 25 °C
DS(on)
1
R
I S - Source Current (A)
0.16
ID = 3.8 A
0.12
0.08
0.04
0.00
0.1
0.0
0.3
0.6
0.9
1.2
1.5
0
2
VSD - Source-to-Drain Voltage (V)
0.6
200
0.4
160
ID = 250 µA
Power (W)
V GS(th) Variance (V)
6
8
10
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
0.2
0.0
- 0.2
- 0.4
- 50
4
VGS - Gate-to-Source Voltage (V)
120
80
40
- 25
0
25
50
75
100
125
150
0
10 -3
10 -2
10 -1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
100
Limited by R DS(on) *
I D - Drain Current (A)
10
1 ms
1
10 ms
0.1
TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 72244
S-81056-Rev. B, 12-May-08
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Si6544BDQ
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72244.
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Document Number: 72244
S-81056-Rev. B, 12-May-08
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Document Number: 91000
Revision: 08-Apr-05
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