Si3586DV Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 3.4 0.070 at VGS = 2.5 V 3.2 0.100 at VGS = 1.8 V 2.5 0.110 at VGS = - 4.5 V - 2.5 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8V - 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Fast Switching In Small Footprint • Very Low RDS(on) for Increased Efficiency • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices TSOP-6 Top View 3 mm S2 D1 G1 1 6 D1 S2 2 5 S1 G2 G1 G2 3 4 D2 2.85 mm Ordering Information: Si3586DV-T1-E3 (Lead (Pb)-free) Si3586DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted N-Channel Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA = 25 °C Continuous Drain Current (TJ = 150 °C)a TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD P-Channel Steady State 5s Steady State 20 - 20 3.4 2.9 2.7 2.3 - 2.5 - 2.1 - 2.0 - 1.7 ±8 1.05 0.75 - 1.05 - 0.75 1.15 0.83 1.15 0.83 0.73 0.53 0.73 0.53 TJ, Tstg Unit V ±8 IDM Pulsed Drain Current Maximum Power Dissipationa ID 5s - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 93 110 130 150 90 90 Unit °C/W Note: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 www.vishay.com 1 Si3586DV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS VDS = VGS, ID = 250 µA N-Ch 0.40 1.1 VDS = VGS, ID = - 250 µA P-Ch - 0.40 - 1.1 VDS = 0 V, VGS = ± 8 V N-Ch ± 100 VDS = 0 V, VGS = ± 8 V P-Ch ± 100 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 20 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 85 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 85 °C P-Ch - 10 ID(on) RDS(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 5 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch -5 VGS = 4.5 V, ID = 3.4 A N-Ch 0.047 VGS = - 4.5 V, ID = - 2.5 A P-Ch 0.086 0.110 VGS = 2.5 V, ID = 3.2 A N-Ch 0.054 0.070 VGS = - 2.5 V, ID = - 2.0 A P-Ch 0.116 0.145 VGS = - 1.8 V, ID = - 2.5 A N-Ch 0.075 0.100 VGS = - 1.8 V, ID = - 1.0 A P-Ch 0.170 0.220 µA 0.060 VDS = 5 V, ID = 3.4 A N-Ch 13 P-Ch 6 IS = 1.05 A, VGS = 0 V N-Ch 0.8 1.1 IS = - 1.05 A, VGS = 0 V P-Ch - 0.8 - 1.1 N-Ch 4.1 6.0 P-Ch 5 7.5 N-Ch 0.65 P-Ch P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A N-Ch P-Ch 0.68 N-Ch 2.6 P-Ch 9.8 N-Ch 30 P-Ch 28 45 N-Ch 52 85 VSD nA A VDS = - 5 V, ID = - 2.5 A gfs V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time N-Channel VDS = 10 V, VGS = 4.5 V, ID = 3.4 A Rg td(on) tr td(off) tf N-Channel VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 0.8 1.3 Ω 45 P-Ch 55 85 N-Ch 25 40 P-Ch 55 85 N-Ch 20 30 P-Ch 32 50 IF = 1.05 A, dI/dt = 100 A/µs N-Ch 25 40 IF = - 1.05 A, dI/dt = 100 A/µs P-Ch 25 40 P-Channel VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω trr nC ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Si3586DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 7 7 6 6 I D - Drain Current (A) I D - Drain Current (A) VGS = 5 V thru 2 V 5 1.5 V 4 3 5 4 3 TC = 125 °C 2 2 1 1 0 0 0.00 25 °C - 55 °C 0 1 2 3 4 5 0.25 0.50 VDS - Drain-to-Source Voltage (V) 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 600 0.10 500 0.08 VGS = 4.5 V 0.06 VGS = 2.5 V 0.04 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.75 400 300 200 Coss 0.02 100 Crss 0.00 0 0 1 2 3 4 5 6 7 8 0 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 6 VDS = 10 V ID = 3.4 A 1.4 4 3 2 (Normalized) 5 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 4 ID - Drain Current (A) VGS = 4.5 V ID = 3.4 A 1.2 1.0 0.8 1 0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si3586DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.25 TJ = 150 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 3.4 A TJ = 25 °C 1 0.20 0.15 0.10 0.05 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.2 8 0.1 6 0.0 Power (W) VGS(th) Variance (V) ID = 250 µA - 0.1 4 - 0.2 2 - 0.3 - 0.4 - 50 0 - 25 0 25 50 75 100 125 150 0.1 0.01 TJ - Temperature (°C) 1 10 30 Time (s) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s DC TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Si3586DV Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 130 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 www.vishay.com 5 Si3586DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 7 25 °C 6 I D - Drain Current (A) 6 I D - Drain Current (A) TC = - 55 °C 7 VGS = 5 V thru 2.5 V 2V 5 4 3 1.5 V 2 125 °C 5 4 3 2 1 1 0 0.0 0 0 1 2 3 4 5 0.5 Output Characteristics 2.0 2.5 Transfer Characteristics 0.75 650 0.60 520 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.45 0.30 VGS = 1.8 V Ciss 390 260 Coss VGS = 2.5 V 130 0.15 Crss VGS = 4.5 V 0 0.00 0 1 2 3 4 5 6 7 0 8 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.6 6.5 VGS = 4.5 V ID = 2.5 A VDS = 10 V ID = 2.5 A 1.4 3.9 2.6 (Normalized) 5.2 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 1.0 1.2 1.0 0.8 1.3 0.0 0 1 2 3 4 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 6 5 6 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Si3586DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.5 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C TJ = 150 °C 1 0.4 0.3 ID = 2.5 A 0.2 0.1 0.0 0.1 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 8 0.3 Power (W) V GS(th) Variance (V) 6 0.2 ID = 250 µA 0.1 4 0.0 2 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 1 10 30 Time (s) TJ - Temperature (°C) Single Pulse Power (Junction-to-Ambient) Threshold Voltage 10 I D - Drain Current (A) Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.1 1 s, 10 s DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 www.vishay.com 7 Si3586DV Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72310. www.vishay.com 8 Document Number: 72310 S09-2110-Rev. D, 12-Oct-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000