NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 35 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW 6 Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −5.0 A Electrostatic Discharge ESD Collector Current − Continuous HBM Class 3 MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3 COLLECTOR 1, 2, 5, 6 3 BASE MAXIMUM RATINGS (TA = 25°C) Rating 2 TSOP−6 CASE 318G STYLE 6 • S Prefix for Automotive and Other Applications Requiring Unique • 4 1 Features Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* 5 4 EMITTER MARKING DIAGRAM VS8 M G G VS8 = Device Code M = Date Code* G = Pb−Free Package (*Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† NSS35200MR6T1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel SNSS35200MR6T1G TSOP−6 (Pb−Free) 3,000 / Tape & Reel Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 5 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS35200MR6/D NSS35200MR6T1G THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction−to−Ambient RqJA (Note 1) Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) Thermal Resistance, Junction−to−Ambient RqJA (Note 2) Thermal Resistance, Junction−to−Lead #1 RqJL Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 8. http://onsemi.com 2 Max Unit 625 5.0 mW mW/°C 200 1.0 8.0 120 80 PDsingle (Notes 2 & 3) 1.75 TJ, Tstg −55 to +150 °C/W W mW/°C °C/W °C/W W °C NSS35200MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − −0.125 −0.175 −0.260 −0.15 −0.20 −0.31 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −1.5 V) (IC = −2.0 A, VCE = −3.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.8 A, IB = −0.008 A) (IC = −1.2 A, IB = −0.012 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.2 A, IB = −0.012 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) V V V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) toff − 225 − nS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 3 MHz NSS35200MR6T1G 0.25 IC/IB = 100 0.1 TA = −55°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 TA = 150°C TA = 25°C 0.01 0.001 0.01 0.1 1 10 100°C 0.15 25°C 0.10 −55°C 0.05 0 0.001 0.01 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.1 VCE = 1.5 V 1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) TA = 150°C hFE, DC CURRENT GAIN 0.20 IC, COLLECTOR CURRENT (A) 1000 TA = 25°C 100 IC/IB = 50 TA = −55°C 0.9 TA = −55°C 0.8 0.7 0.6 TA = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 0.1 1.2 1.1 0.01 0.1 1 10 0.8 0.7 0.6 1 Figure 4. Base Emitter Saturation Voltage versus Collector Current 1000 Cibo TA = 25°C 0.5 0.2 0.001 0.1 Figure 3. DC Current Gain versus Collector Current TA = −55°C 0.3 0.01 IC, COLLECTOR CURRENT (A) VCE = 3 V 0.4 IC/IB = 100 IC, COLLECTOR CURRENT (A) 1 0.9 0 0.001 C, CAPACITANCE (pF) VBE(ON), BASE−EMITTER ON VOLTAGE (V) 10 0.001 Cobo 100 TA = 150°C 0.01 0.1 1 10 0.1 10 1 10 IC, COLLECTOR CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Capacitance http://onsemi.com 4 10 NSS35200MR6T1G IC , COLLECTOR CURRENT (AMPS) 10 1 s 100 ms 10 ms 1 ms 100 ms 1.0 DC 0.1 SINGLE PULSE AT Tamb = 25°C 0.01 0.1 1.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 7. Safe Operating Area 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 8. Normalized Thermal Response http://onsemi.com 5 10 100 1000 NSS35200MR6T1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D H 6 5 ÉÉ E1 1 NOTE 5 2 L2 4 GAUGE PLANE E 3 L b DETAIL Z e 0.05 M A C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. SEATING PLANE DIM A A1 b c D E E1 e L L2 M c A1 DETAIL Z MIN 0.90 0.01 0.25 0.10 2.90 2.50 1.30 0.85 0.20 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 2.75 3.00 1.50 1.70 0.95 1.05 0.40 0.60 0.25 BSC 10° − STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 6X 3.20 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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