ONSEMI NSS20300MR6T1G

NSS20300MR6T1G
Product Preview
20 V, 5 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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20 VOLTS
5.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 78 m
COLLECTOR
1, 2, 5, 6
3
BASE
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−20
Vdc
Collector-Base Voltage
VCBO
−30
Vdc
Emitter-Base Voltage
VEBO
−6.0
Vdc
IC
−3.0
Adc
ICM
−5.0
A
Rating
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
ESD
4
EMITTER
3
4
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
TBD
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
RθJA (Note 1)
TBD
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
TBD
Thermal Resistance,
Junction−to−Ambient
RθJA (Note 2)
TBD
°C/W
Thermal Resistance,
Junction−to−Lead #1
RθJL
TBD
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 2)
TBD
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
6
CASE 318G
TSOP
STYLE 6
W
mW/°C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
June, 2005 − Rev. P1
1
DEVICE MARKING
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
 Semiconductor Components Industries, LLC, 2005
5
2
1
VS1
VS1= Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSS20300MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS20300MR6/D
NSS20300MR6T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −20 Vdc)
ICES
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
−20
−
−30
−
−6.0
−
−
−0.1
−
−0.1
−
−0.1
100
100
100
−
400
−
Vdc
Vdc
Adc
Adc
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = −1.0 A, VCE = −1.5 V)
(IC = −1.5 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.10 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1A, IB = −0.010 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
V
−
−
−
−
−
−
−0.015
−0.145
−0.320
−
−
−0.85
−
−
−0.875
100
−
−
V
V
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
100
pF
3. Pulsed Condition: Pulse Width ≤ 300 sec, Duty Cycle ≤ 2%
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2
NSS20300MR6T1G
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
L
6
S
1
5
4
2
3
B
MILLIMETERS
DIM MIN
MAX
A
2.90
3.10
B
1.30
1.70
C
0.90
1.10
D
0.25
0.50
G
0.85
1.05
H 0.013 0.100
J
0.10
0.26
K
0.20
0.60
L
1.25
1.55
M
0_
10 _
S
2.50
3.00
D
G
M
J
C
0.05 (0.002)
K
H
STYLE 6:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
NSS20300MR6T1G
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
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4
For additional information, please contact your
local Sales Representative.
NSS20300MR6/D