NSS35200MR6T1G 35 V, 5 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 35 VOLTS 5.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 • This is a Pb−Free Device 3 BASE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage VCBO −55 Vdc Emitter-Base Voltage VEBO −5.0 Vdc IC −2.0 Adc Collector Current − Peak ICM −5.0 A Electrostatic Discharge ESD Collector Current − Continuous 4 EMITTER 6 5 4 1 2 3 TSOP−6 CASE 318G STYLE 6 HBM Class 3 MM Class C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. DEVICE MARKING VS8M VS8 = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS35200MR6T1G Package Shipping † TSOP−6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 0 1 Publication Order Number: NSS35200MR6/D NSS35200MR6T1G THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C Characteristic PD (Note 1) 625 mW 5.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 200 °C/W Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 2) 1.0 W 8.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 120 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL 80 °C/W PDsingle (Notes 2 & 3) 1.75 W TJ, Tstg −55 to +150 °C Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 X 1.0 inch Pad. 3. Refer to Figure 9. http://onsemi.com 2 NSS35200MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max −35 −45 − −55 −65 − −5.0 −7.0 − − −0.03 −0.1 − −0.03 −0.1 − −0.01 −0.1 100 100 100 200 200 200 − 400 − − − − −0.125 −0.175 −0.260 −0.15 −0.20 −0.31 − −0.68 −0.85 − −0.81 −0.875 100 − − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = −35 Vdc, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = −35 Vdc) ICES Emitter Cutoff Current (VEB = −4.0 Vdc) IEBO Vdc Vdc Vdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −1.0 A, VCE = −1.5 V) (IC = −1.5 A, VCE = −1.5 V) (IC = −2.0 A, VCE = −3.0 V) hFE Collector −Emitter Saturation Voltage (Note 4) (IC = −0.8 A, IB = −0.008 A) (IC = −1.2 A, IB = −0.012 A) (IC = −2.0 A, IB = −0.02 A) VCE(sat) Base −Emitter Saturation Voltage (Note 4) (IC = −1.2 A, IB = −0.012 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) V V V fT MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pF Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W) ton − 35 − nS Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W) toff − 225 − nS 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 3 10 0.01 1.6 1.4 1.2 1.0 0.001 0.01 0.1 0.20 100°C 0.15 25°C 0.10 0.05 0 0.001 0.01 0.1 1.0 Figure 1. Collector Emitter Saturation Voltage versus Collector Current Figure 2. Collector Emitter Saturation Voltage versus Collector Current 1.0 100°C 25°C −55°C 0.2 0.001 0.01 0.1 25°C 0.6 100°C 0.4 0.2 0 1.0 −55°C 0.8 0.001 0.1 0.01 1.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Saturation Voltage versus Collector Current 1.1 750 1.0 700 0.9 100°C 0.8 25°C 0.7 0.6 −55°C 0.5 0.4 0.3 −55°C IC, COLLECTOR CURRENT (AMPS) 0.4 0 IC/IB = 50 IC, COLLECTOR CURRENT (AMPS) 0.8 0.6 0.25 1.0 C ibo , INPUT CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 100 50 0.001 V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.1 VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) NSS35200MR6T1G 650 600 550 500 450 400 350 0.001 0.01 0.1 300 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE (VOLTS) Figure 5. Base Emitter Turn−On Voltage versus Collector Current Figure 6. Input Capacitance http://onsemi.com 4 4.5 5.0 NSS35200MR6T1G 10 200 IC , COLLECTOR CURRENT (AMPS) Cobo, OUTPUT CAPACITANCE (pF) 225 175 150 125 100 75 50 1 s 100 ms 10 ms r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 0 5.0 100 ms 1.0 DC 0.1 25 0 1 ms 0.01 SINGLE PULSE AT Tamb = 25°C VCB, COLLECTOR BASE VOLTAGE (VOLTS) 1.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Output Capacitance Figure 8. Safe Operating Area 10 15 20 25 30 35 0.1 100 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 Figure 9. Normalized Thermal Response http://onsemi.com 5 10 100 1000 NSS35200MR6T1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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