NSS20201MR6T1G 20 V, 3 A, Low VCE(sat) NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage Rating VCEO 20 V Collector-Base Voltage VCBO 40 V Emitter-Base Voltage VEBO 5.0 V IC 2.0 A ICM 3.0 A Symbol Max Unit PD (Note 1) 460 mW 3.7 mW/°C RqJA (Note 1) 272 °C/W PD (Note 2) 780 mW 6.3 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 160 °C/W Thermal Resistance, Junction−to−Lead #1 RqJL (Note 1) RqJL (Note 2) 48 40 °C/W °C/W Total Device Dissipation (Single Pulse < 10 s) PDsingle (Note 2) 1.5 W Junction and Storage Temperature Range TJ, Tstg −55 to +150 Collector Current − Continuous Collector Current − Peak http://onsemi.com 20 VOLTS 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 100 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER 6 Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C January, 2006 − Rev. 0 2 3 CASE 318G TSOP−6 STYLE 6 DEVICE MARKING VS0 MG G VS0 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ 100 mm2, 2 oz copper traces. 2. FR−4 @ 500 mm2, 2 oz copper traces. © Semiconductor Components Industries, LLC, 2006 4 1 THERMAL CHARACTERISTICS Characteristic 5 1 Device NSS20201MR6T1G Package Shipping † TSOP−6 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS20201MR6/D NSS20201MR6T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 20 − − 40 − − 5.0 − − − − 0.1 − − 0.1 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO Collector− Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 40 V, IE = 0) ICBO Collector−Emitter Cutoff Current (VCES = 20 V) ICES Emitter Cutoff Current (VEB = 5.0 V) IEBO V V V mA mA mA − 0.1 ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 1.0 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) hFE Collector −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 10 mA) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = 1.0 A, VCE = 2.0 V) VBE(on) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT Output Capacitance (f = 1.0 MHz) 300 300 200 − − − − − − − − − − − − 0.150 0.100 0.025 − − 0.95 − − 0.90 200 − − − − 15 V V V MHz Cobo 3. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. http://onsemi.com 2 pF NSS20201MR6T1G PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G M J C 0.05 (0.002) K H STYLE 6: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 NSS20201MR6T1G ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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