Si7222DN Datasheet

Si7222DN
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
ID (A)
0.042 at VGS = 10 V
6e
0.047 at VGS = 4.5 V
5e
Qg (Typ.)
8 nC
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm
Profile
APPLICATIONS
• Primary Side Switch
• Synchronus Rectification
PowerPAK 1212-8
D1
S1
3.30 mm
D2
3.30 mm
1
G1
2
S2
3
G2
4
D1
G1
8
G2
D1
7
D2
6
D2
Bottom View
5
Ordering Information: Si7222DN-T1-E3 (Lead (Pb)-free)
Si7222DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 12
TC = 70 °C
TA = 25 °C
ID
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Avalanche Current
L = 0.1 mH
Single-Pulse Avalanche Energy
IS
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
Soldering Recommendations (Peak
Temperature)c, d
5.7a, b
A
24
6e
2.0a, b
13
8.5
mJ
17.8
PD
11.4
2.5a, b
W
1.6a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
5e
4.3a, b
TA = 70 °C
Pulsed Drain Current
V
6e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
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1
Si7222DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
a, b
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Typical
Maximum
t ≤ 10 s
RthJA
38
50
Steady State
RthJC
5.5
7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 94 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
V
40
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.6
V
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
VDS ≥ 5 V, VGS = 10 V
- 3.8
0.6
20
µA
A
VGS = 10 V, ID = 5.7 A
0.035
0.042
VGS = 4.5 V, ID = 4.3 A
0.039
0.047
VDS = 15 V, ID = 5.7 A
18
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
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2
700
VDS = 20 V, VGS = 0 V, f = 1 MHz
76
VDS = 20 V, VGS = 10 V, ID = 5.2 A
19
29
8
12
pF
45
VDS = 20 V, VGS = 4.5 V, ID = 5.2 A
1.5
f = 1 MHz
1.9
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
50
80
20
30
tf
7
12
td(on)
5
9
12
90
21
35
6
10
2.4
td(on)
tr
td(off)
tr
td(off)
tf
nC
9
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Ω
15
ns
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
Si7222DN
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
Body Diode Voltage
TC = 25 °C
IS
6
ISM
24
IS = 2 A
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 1.7 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.76
1.2
V
25
40
ns
17
26
nC
14
11
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
www.vishay.com
3
Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
2.5
VGS = 10 thru 3 V
2.0
I D - Drain Current (A)
I D - Drain Current (A)
16
12
8
1.5
1.0
TC = 125 °C
2V
4
0.5
25 °C
- 55 °C
0
0
1
2
3
4
0.0
0.00
5
0.25
VDS - Drain-to-Source Voltage (V)
0.50
0.75
1.00
1.25
1.50
1.75
2.00
35
40
125
150
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.050
1200
1000
0.044
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.047
0.041
VGS = 4.5 V
0.038
VGS = 10 V
0.035
0.032
0.029
0.026
800
Ciss
600
400
200
Coss
0.023
0.020
Crss
0
0
4
8
12
16
20
0
5
ID - Drain Current (A)
10
ID = 5.7 A
ID = 5.2 A
1.8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
30
2.1
VDS = 10 V
4
3
VDS = 20 V
2
1.5
1.2
0.9
1
2.2
4.4
6.6
Qg - Total Gate Charge (nC)
Gate Charge
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4
25
Capacitance
6
0
0.0
20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
5
15
8.8
11.0
0.6
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.20
R DS(on) - Drain-to-Source On-Resistance (Ω)
20
I S - Source Current (A)
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.00
0.2
0.4
0.6
0.8
1.0
ID = 5.7 A
0.16
0.12
TJ = 125 °C
0.08
0.04
TJ = 25 °C
0.00
0
1.2
2
VSD - Source-to-Drain Voltage (V)
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.4
50
40
0.2
Power (W)
VGS(th) (V)
ID = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 50
30
20
10
- 25
0
25
50
75
100
125
0
0.001
150
0.01
TJ - Temperature (°C)
0.1
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
1 ms
I D - Drain Current (A)
10
1
10 ms
100 ms
0.1
1s
TA = 25 °C
Single Pulse
10 s
DC
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
www.vishay.com
5
Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
55
ID - Drain Current (A)
44
33
22
Package Limited
11
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
25
3.0
2.5
2.0
Power (W)
Power (W)
20
15
1.5
10
1.0
5
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 73439
S-83052-Rev. B, 29-Dec-08
Si7222DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73439.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
www.vishay.com
7
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Revision: 02-Oct-12
1
Document Number: 91000