AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=-10V) -60V -26A RDS(ON) (at VGS=-10V) < 40mΩ RDS(ON) (at VGS=-4.5V) < 55mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO252 DPAK Top View Bottom View TO-251A IPAK Bottom View Top View D D D D D G S G S G G D S G S S D Orderable Part Number Package Type Form Minimum Order Quantity AOD409 AOI409 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev.6.0: October 2014 Steady-State Steady-State A -18 IAS -26 A EAS 34 mJ 60 W 30 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V -80 PDSM TA=70°C ±20 IDM PD TA=25°C Power Dissipation Units V -26 ID TC=100°C Maximum -60 RθJA RθJC -55 to 175 Typ 16.7 40 1.9 www.aosmd.com °C Max 25 50 2.5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -60 IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=-250µA -1.2 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=-4.5V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -1.9 43 mΩ -1 V -30 A 3600 pF S 241 2 pF pF 2.4 Ω 44 54 nC 22.2 28 nC Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-20A, dI/dt=100A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs 59 VGS=-10V, VDS=-30V, RL=1.5Ω, RGEN=3Ω V 55 32 -0.73 Qg(4.5V) VGS=-10V, VDS=-30V, ID=-20A nA mΩ 153 f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Body Diode Reverse Recovery Time 40 53 2977 VGS=0V, VDS=-30V, f=1MHz -2.4 A 32 TJ=125°C Diode Forward Voltage µA -5 ±100 VGS=-10V, ID=-20A VSD Units -1 Zero Gate Voltage Drain Current gFS Max V VDS=-48V, VGS=0V IDSS Coss Typ 9 nC 10 nC 12 ns 14.5 ns 38 ns 15 ns 50 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6.0: October 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 30 -4.5V VDS=-5V -4V 25 25 -5V 20 20 -ID(A) -ID (A) -6V 15 -3.5V 10 15 125°C 10 5 25°C 5 VGS=-3V 0 0 0 1 2 3 4 1 5 2 4 5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Figure 1: On-Region Characteristics (Note E) 60 Normalized On-Resistance 2 50 VGS=-4.5V RDS(ON) (mΩ) 3 40 30 VGS=-10V 20 1.8 VGS=-10V ID=-20A 1.6 1.4 1.2 VGS=-4.5V ID=-20A 1 0.8 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 80 1.0E+01 ID=-20A 125°C 60 1.0E-01 -IS (A) RDS(ON) (mΩ) 1.0E+00 40 1.0E-02 125°C 1.0E-03 25°C 1.0E-04 25°C 20 1.0E-05 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.6.0: October 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=-30V ID=-20A 4000 3500 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 3000 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 50 60 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 TJ(Max)=175°C TC=25°C 10µs 100.0 400 RDS(ON) limited 10.0 100µs 1ms 10ms 1.0 DC 0.0 0.01 300 200 100 TJ(Max)=175°C TC=25°C 0.1 Power (W) -ID (Amps) 10µs 0.1 1 10 -VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=2.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.6.0: October 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 L ⋅ ID tA = BV − VDD 25 Power Dissipation (W) -ID(A), Peak Avalanche Current 30 20 15 TA=25°C 10 0.00001 60 40 20 0 0.0001 0 0.001 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 60 30 25 50 20 40 Power (W) Current rating -ID(A) TA=25°C 15 30 10 20 5 10 0 0 25 50 75 100 125 150 175 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) ( C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 0.01 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.6.0: October 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.6.0: October 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6