Datasheet

AOW292
100V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
100V
105A
RDS(ON) (at VGS=10V)
< 4.1mΩ
RDS(ON) (at VGS=6V)
< 4.9mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-262
D
Bottom View
Top View
D
D
G
S
GD
SD
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOW292
TO-262
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: February 2015
IAS
60
A
EAS
180
mJ
VSPIKE
120
V
300
Steady-State
Steady-State
W
150
1.9
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
A
11.5
PDSM
Junction and Storage Temperature Range
A
14.5
PD
TA=25°C
V
420
IDSM
TA=70°C
±20
105
IDM
TA=25°C
Continuous Drain
Current
Units
V
105
ID
TC=100°C
C
Maximum
100
RθJA
RθJC
-55 to 175
Typ
15
55
0.35
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°C
Max
20
65
0.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.3
TJ=125°C
VGS=6V, ID=20A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
Qgs
Gate Source Charge
VGS=10V, VDS=50V, ID=20A
nA
3.4
V
3.3
4.1
5.4
6.7
3.8
4.9
mΩ
1
V
105
A
mΩ
90
VGS=0V, VDS=50V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
±100
2.8
0.68
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
µA
5
VGS=10V, ID=20A
VDS=5V, ID=20A
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
0.4
S
6775
pF
557
pF
32
pF
0.8
1.2
Ω
90
126
nC
24
nC
nC
Qgd
Gate Drain Charge
13.5
tD(on)
Turn-On DelayTime
20
ns
tr
Turn-On Rise Time
11.5
ns
48
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
10
ns
IF=20A, dI/dt=500A/µs
50
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
380
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2015
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V 6V
4.5V
VDS=5V
80
60
60
ID(A)
ID (A)
80
40
125°C
40
4V
25°C
20
20
VGS=3.5V
0
0
0
1
2
3
4
1
5
2
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ)
3
VGS=6V
4
VGS=10V
2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
12
1.0E+02
ID=20A
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
9
6
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
3
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8000
VDS=50V
ID=20A
Ciss
8
Capacitance (pF)
VGS (Volts)
6000
6
4
2
4000
2000
Coss
Crss
0
0
0
20
40
60
80
100
0
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
80
100
1000
800
10.0
1ms
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
Power (W)
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
10µs
100µs
ID (Amps)
60
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
40
600
400
200
0.1
1
10
100
1000
VDS (Volts)
VGS> or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.5°C/W
1
PDM
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2015
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
350
300
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=25°C
TA=100°C
100
TA=150°C
TA=125°C
250
200
150
100
50
10
0
1
10
100
1000
0
25
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
120
10000
TA=25°C
100
Power (W)
Current rating ID(A)
1000
80
60
40
100
10
20
0
0
25
50
75
100
125
150
175
1
1E-05
ZθJA Normalized Transient
Thermal Resistance
TCASE (°C)
Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
0.1
PDM
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2015
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: February 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6