AOT262L/AOB262L

AOT262L/AOB262L
60V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V
140A
RDS(ON) (at VGS=10V)
< 3.0mΩ (< 2.8mΩ∗)
RDS(ON) (at VGS = 6V)
< 3.2mΩ (< 3.0mΩ∗)
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-263
D2PAK
TO-220
Top View
Bottom View
Top View
D
Bottom View
D
D
D
D
G
G
D
S
S
Orderable Part Number
AOT262L
AOB262L
D
Form
Tube
Tape & Reel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
Units
V
±20
V
A
500
20
IDSM
TA=70°C
Maximum
60
110
IDM
TA=25°C
Minimum Order Quantity
1000
800
140
ID
TC=100°C
S
S
G
Package Type
TO-220
TO-263
Gate-Source Voltage
G
S
G
A
16
Avalanche Current C
IAS, IAR
115
A
Avalanche energy L=0.1mH C
EAS, EAR
661
mJ
VSPIKE
72
V
dv/dt
8
333
V/ns
VDS Spike
10µs
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
Rev.1.0 : August 2014
2.1
PDSM
Junction and Storage Temperature Range
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
167
-55 to 175
Typ
12
48
0.35
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°C
Max
15
60
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
60
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
VGS=10V, ID=20A
TJ=125°C
100
nA
2.7
3.2
V
2.2
3.0
A
3.6
VGS=6V, ID=20A
TO220
2.5
3.2
VGS=10V, ID=20A
TO263
2.0
2.8
2.3
80
3.0
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current G
RDS(ON)
gFS
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
mΩ
S
1
V
140
A
6500
8140
9800
pF
VGS=0V, VDS=30V, f=1MHz
830
1040
1350
pF
25
32
55
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1
1.5
Ω
75
95
115
nC
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qgs
Units
V
VDS=60V, VGS=0V
TO220
Max
VGS=10V, VDS=30V, ID=20A
30
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
27
ns
tr
Turn-On Rise Time
22
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
21
30
39
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
130
185
240
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
47
ns
8
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 : August 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
80
VDS=5V
80
6V
10V
60
ID(A)
ID (A)
60
40
40
4V
125°C
25°C
20
20
VGS=3.5V
0
0
0
1
2
3
4
1
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
6
2.2
Normalized On-Resistance
RDS(ON) (mΩ)
2
4
VGS=6V
2
VGS=10V
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
17
5
2
10
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
8
ID=20A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
1.0E-04
25°C
1.0E-05
0.0
0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0 : August 2014
0.2
0.4
0.6
0.8
1.0
1.2
10
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VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
VDS=30V
ID=20A
8000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
6000
4000
2
2000
0
0
Coss
Crss
0
10
20
30
40 50 60 70 80
Qg (nC)
Figure 7: Gate-Charge Characteristics
90
100
0
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
600
1000.0
10µs
RDS(ON)
limited
100.0
TJ(Max)=175°C
TC=25°C
10µs
100µs
500
1ms
10ms
10.0
Power (W)
ID (Amps)
60
DC
1.0
TJ(Max)=175°C
TC=25°C
300
0.1
0.0
0.01
0.1
17
5
2
10
400
1
10
100
1000
200
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
(Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=0.45°C/W
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
T
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0 : August 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
TA=125°C
10
300
200
100
0
1
10
100
1000
0
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
1000
150
TA=25°C
Power (W)
Current rating ID(A)
120
90
60
100
17
5
2
10
10
30
1
0.001
0
0
25
50
75
100
125
150
0.1
10
175
TCASE (°C)
Figure 14: Current De-rating (Note F)
1000
0
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
40
0.1
PD
0.01
Ton
Single Pulse
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0 : August 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0 : August 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6