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HMC375LP3 / 375LP3E
v03.0610
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Typical Applications
Features
The HMC375LP3 / HMC375LP3E is ideal for
basestation receivers:
Noise Figure: 0.9 dB
• GSM, GPRS & EDGE
Gain: 17 dB
• CDMA & W-CDMA
Very Stable Gain vs. Supply & Temperature
• DECT
Single Supply: +5V @ 136 mA
Output IP3: +34 dBm
50 Ohm Matched Output
Functional Diagram
General Description
The HMC375LP3 & HMC375LP3E high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers are
ideal for GSM & CDMA cellular basestation front-end
receivers operating between 1.7 and 2.2 GHz. This
LNA has been optimized to provide 0.9 dB noise
figure, 17 dB gain and +33 dBm output IP3 from
a single supply of +5V @ 136mA. Input and output
return losses are 14 dB typical with the LNA requiring
minimal external components to optimize the RF input
match, RF ground and DC bias. For applications
which require improved noise figure, please see the
HMC618LP3(E).
Electrical Specifi cations, TA = +25° C, Vs = +5V
Parameter
Min.
Frequency Range
Gain
16.5
Gain Variation Over Temperature
Max.
Min.
Typ.
Max.
Min.
1.9 - 2.0
18.5
15.5
Typ.
Max.
Min.
2.0 - 2.1
17.5
15
17
13
Typ.
Max.
GHz
15
dB
0.014
0.021
0.014
0.021
0.014
0.021
0.014
0.021
1.0
1.35
0.95
1.2
0.9
1.2
0.9
1.3
Input Return Loss
12
13
14
Units
2.1 - 2.2
Noise Figure
15
dB/°C
dB
dB
Output Return Loss
13
16
11
8
dB
Reverse Isolation
35
34
34
34
dB
17.5
dBm
Output Power for
1dB Compression (P1dB)
Saturated Output Power (Psat)
7 - 74
Typ.
1.8 - 1.9
16
18.5
16
18.5
15
18
14.5
19.5
19.5
19.5
19.5
dBm
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
1 MHz tone spacing)
34
33.5
33
32.5
dBm
Supply Current (Idd)
136
136
136
136
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC375LP3 / 375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Broadband Gain & Return Loss
25
NOISE FIGURE (dB)
RESPONSE (dB)
+25 C
+85 C
-40 C
1.3
5
-5
-15
S21
S11
S22
-25
1.1
0.9
0.7
0.5
-35
1
1.5
2
FREQUENCY (GHz)
2.5
3
Gain vs. Temperature
1.7
1.8
2.1
2.2
2.1
2.2
Noise Figure vs. Vdd
24
1.5
22
+4.5 V
+5.0 V
+5.5 V
NOISE FIGURE (dB)
1.3
20
GAIN (dB)
1.9
2
FREQUENCY (GHz)
18
16
+25 C
+85 C
-40 C
14
1.1
0.9
AMPLIFIERS - LOW NOISE - SMT
1.5
15
0.5
7
Noise Figure vs. Temperature
0.7
12
0.5
10
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
Gain vs. Vdd
1.7
1.8
1.9
2
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
-15
22
-20
ISOLATION (dB)
GAIN (dB)
20
18
16
-35
-45
-50
12
1.7
+25 C
+85 C
-40 C
-30
-40
+4.5 V
+5.0 V
+5.5 V
14
-25
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
1.7
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 75
HMC375LP3 / 375LP3E
v03.0610
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
+25 C
-40 C
+85 C
-10
-15
-20
1.9
2
FREQUENCY (GHz)
2.1
2.2
1.7
COMPRESSION (dBm)
+25 C
+85 C
-40 C
38
36
34
2.1
2.2
1.8
1.9
2
FREQUENCY (GHz)
2.1
20
18
14
1.7
2.2
+25 C
+85 C
-40 C
PSAT
22
16
30
P1dB
1.8
1.9
2
2.1
2.2
2.1
2.2
FREQUENCY (GHz)
P1dB vs. Vdd
Output IP3 vs. Vdd
24
40
22
OUTPUT P1dB (dBm)
+4.5 V
+5.0 V
+5.5 V
38
IP3 (dBm)
1.9
2
FREQUENCY (GHz)
24
32
36
34
32
20
18
16
+4.5 V
+5.0 V
+5.5 V
14
12
30
7 - 76
1.8
P1dB & PSAT vs. Temperature
40
1.7
-15
-25
1.8
Output IP3 vs. Temperature
1.7
-10
-20
-25
1.7
+25 C
+85 C
-40 C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
IP3 (dBm)
AMPLIFIERS - LOW NOISE - SMT
0
1.8
1.9
2
FREQUENCY (GHz)
2.1
2.2
1.7
1.8
1.9
2
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC375LP3 / 375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2)
+8.0 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)(Vs = +5.0 Vdc)
+10 dBm
+4.5
135
Channel Temperature
150 °C
+5.0
136
+5.5
137
Continuous Pdiss (T = 85 °C)
(derate 15.6 mW/°C above 85 °C)
1.015 W
Thermal Resistance
(channel to ground paddle)
64.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
7
AMPLIFIERS - LOW NOISE - SMT
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC375LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC375LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
375
XXXX
[2]
375
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 77
HMC375LP3 / 375LP3E
v03.0610
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Pin Descriptions
Function
Description
1, 3, 4, 6-10,
12, 14, 16
Pin Number
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
2
RFIN
This pin is matched to 50 Ohms with a 13 nH
inductor to ground. See Application Circuit.
5
ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
13,15
Vdd2, Vdd1
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
GND
Package bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
Note: L1, L2, L3 and C1 should be located as close to pins as possible.
7 - 78
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC375LP3 / 375LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
7
AMPLIFIERS - LOW NOISE - SMT
Evaluation PCB
List of Materials for Evaluation PCB 107726 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J4
DC Pin
C1
1000 pF Capacitor, 0402 Pkg.
C2, C3
10000 pF Capacitor, 0603 Pkg.
L1
13nH Inductor, 0402 Pkg.
L2
33nH Inductor, 0603 Pkg.
L3
24nH Inductor, 0402 Pkg.
U1
HMC375LP3 / HMC375LP3E Amplifier
PCB [2]
107514 Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 79