HMC618LP3 / 618LP3E v04.0508 LOW NOISE AMPLIFIERS - SMT 5 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC618LP3(E) is ideal for: Noise Figure: 0.75 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure OIP3: 36 dBm • Repeaters and Femto Cells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output 16 Lead 3x3mm SMT Package: 9 mm2 Functional Diagram General Description The HMC618LP3(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.7 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3(E) shares the same package and pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA. The HMC618LP3(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3(E) is an ideal replacement for the HMC375LP3(E). Electrical Specifi cations, TA = +25° C, Rbias = 10K Vdd = 3 Vdc Vdd = 5 Vdc Parameter Units Min. Frequency Range Gain Typ. Max. Min. 1700 - 2000 15 0.009 Noise Figure 0.90 Max. Min. 2000 - 2200 18 Gain Variation Over Temperature Typ. 12.5 0.9 Max. Min. 1700 - 2000 15.8 16 0.009 1.2 Typ. 0.75 13.5 1.1 MHz 17 dB 0.008 dB/°C 0.85 1.15 dB Input Return Loss 17 19 18 19.5 dB Output Return Loss 13 11 12.5 9.5 dB 20 dBm Output Power for 1 dB Compression (P1dB) 12 15 13.5 15 16.5 20 18 Saturated Output Power (Psat) 16 16 20.5 21 dBm Output Third Order Intercept (IP3) 28 28 35 36 dBm Supply Current (Idd) 47 65 47 65 117 155 117 * Rbias resistor sets current, see application circuit herein 5 - 256 Max. 2000 - 2200 19 0.008 1.2 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 155 mA HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain & Return Loss [1] [2] 25 S21 20 5 GAIN (dB) RESPONSE (dB) 22 Vdd=5V Vdd=3V S22 -5 18 +25C +85C - 40C 16 -15 -25 0.8 14 S11 12 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 FREQUENCY (GHz) Gain vs. Temperature [2] 2.3 0 20 RETURN LOSS (dB) -5 18 GAIN (dB) 2.2 Input Return Loss vs. Temperature [1] 22 16 +25C +85C - 40C 14 +25 C +85 C - 40 C -10 -15 -20 12 -25 10 1.6 1.9 2 2.1 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - SMT 24 15 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Output Return Loss vs. Temperature [1] 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 Reverse Isolation vs. Temperature [1] 0 0 -5 +25 C +85 C - 40 C -10 ISOLATION (dB) -5 RETURN LOSS (dB) 5 Gain vs. Temperature [1] -10 -15 +25 C +85 C - 40 C -15 -20 -25 -30 -20 -35 -40 -25 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 10K 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 [2] Vdd = 3V, Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 257 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 Noise Figure vs Temperature [1] [2] [4] Output P1dB vs. Temperature [1] [2] 24 Vdd=5V Vdd=3V 22 1.2 1 0.8 +25 C 0.6 18 16 Vdd=3V 14 -40C 0.4 Vdd=5V 20 +85C P1dB (dBm) NOISE FIGURE (dB) 1.4 +25 C +85 C - 40 C 12 0.2 0 1.6 10 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 1.6 Psat vs. Temperature [1] [2] 1.7 38 IP3 (dBm) 18 Vdd=3V 16 2.2 2.3 34 32 +25 C +85 C - 40 C 30 28 +25 C +85 C -40 C 12 26 Vdd=3V 24 10 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 1.6 2.3 38 36 120 36 34 100 34 80 30 60 28 26 24 3.5 3.9 4.3 4.7 1.9 2 2.1 5.1 140 120 IP3 100 80 32 Idd 30 60 40 28 40 20 26 20 0 24 5.5 2.7 0 3.1 VOLTAGE SUPPLY (V) 3.5 3.9 4.3 4.7 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K [3] Rbias = 10K [4] Measurement reference plane shown on evaluation PCB drawing. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.1 5.5 Idd (mA) IP3 Idd (mA) Idd IP3 (dBm) 140 3.1 1.8 Output IP3 and Idd vs. Supply Voltage @ 2100 MHz [3] 38 32 1.7 FREQUENCY (GHz) Output IP3 and Idd vs. Supply Voltage @ 1750 MHz [3] IP3 (dBm) 2.3 36 20 14 5 - 258 2.2 Vdd=5V Vdd=5V 2.7 1.9 2 2.1 FREQUENCY (GHz) 40 22 1.6 1.8 Output IP3 vs. Temperature [1] [2] 24 Psat (dBm) LOW NOISE AMPLIFIERS - SMT 1.6 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Power Compression @ 1750 MHz [1] 20 10 0 Pout Gain PAE -10 20 10 Pout Gain PAE 0 -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 -18 -16 -14 INPUT POWER (dBm) -12 -10 -8 -6 -4 -2 INPUT POWER (dBm) Power Compression @ 2100 MHz [1] Power Compression @ 2100 MHz [2] 30 Pout (dBm), GAIN (dB), PAE (%) 30 Pout (dBm), GAIN (dB), PAE (%) LOW NOISE AMPLIFIERS - SMT 30 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 20 10 0 Pout Gain PAE -10 20 10 0 Pout Gain PAE -10 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -18 -16 -14 -12 INPUT POWER (dBm) 1.2 24 1 22 18 0.6 16 0.4 12 2.7 GAIN P1dB 3.1 3.5 3.9 4.3 4.7 0.2 5.1 0 5.5 -4 -2 0 2 4 [2] Vdd = 3V, Rbias = 10K 1.2 Noise Figure 1 20 0.8 18 0.6 16 0.4 GAIN P1dB 14 12 2.7 SUPPLY VOLTAGE (V) [1] Vdd = 5V, Rbias = 10K -6 3.1 3.5 3.9 4.3 4.7 NOISE FIGURE (dB) 0.8 NOISE FIGURE (dB) 20 GAIN (dB) & P1dB (dBm) Noise Figure 14 -8 Gain, Power & Noise Figure vs. Supply Voltage @ 2100 GHz [3] 24 22 -10 INPUT POWER (dBm) Gain, Power & Noise Figure vs. Supply Voltage @ 1750 GHz [3] GAIN (dB) & P1dB (dBm) 5 Power Compression @ 1750 MHz [2] 0.2 5.1 0 5.5 SUPPLY VOLTAGE (V) [3] Rbias = 10K For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 259 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Gain, Noise Figure & Rbias @ 1750 MHz Output IP3 vs. Rbias @ 1750 MHz 36 22 1.6 34 21 1.4 20 1.2 19 1 18 0.8 17 0.6 30 GAIN (dB) IP3 (dBm) 32 Vdd=5V Vdd=3V 28 26 10000 100 1000 Rbias (Ohms) 10000 Rbias(Ohms) Output IP3 vs. Rbias @ 2100 MHz Gain, Noise Figure & Rbias @ 2100 MHz 38 36 1.2 19 1 GAIN (dB) IP3 (dBm) 32 Vdd=5V Vdd=3V 18 0.8 30 17 0.6 16 0.2 15 26 24 100 0.4 Vdd=5V Vdd=3V 0 14 1000 Rbias (Ohms) 10000 100 1000 Rbias(Ohms) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10000 NOISE FIGURE (dB) 20 34 28 5 - 260 0 14 1000 0.4 0.2 15 22 100 Vdd=5V Vdd=3V 16 24 NOISE FIGURE (dB) LOW NOISE AMPLIFIERS - SMT 5 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Rbias Vdd1 = Vdd2 (V) Idd1 + Idd2 (mA) Min (Ohms) Max (Ohms) R1 (Ohms) 1K [1] Open Circuit 1.5k 34 10k 47 120 71 1k 3V 5V 0 Open Circuit 28 470 89 10k 117 [1] With Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. Absolute Maximum Ratings Drain Bias Voltage (Vdd1, Vdd2) +6V RF Input Power (RFIN) (Vdd = +5 Vdc) +10 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 9.68 mW/°C above 85 °C) 0.63 W Thermal Resistance (channel to ground paddle) 103.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd (Rbias = 10K) Vdd (Vdc) Idd (mA) 2.7 35 3.0 47 3.3 58 4.5 101 5.0 117 5.5 133 LOW NOISE AMPLIFIERS - SMT 5 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 261 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Outline Drawing LOW NOISE AMPLIFIERS - SMT 5 Part Number Package Body Material Lead Finish MSL Rating HMC618LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 618 XXXX [2] 618 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 5 - 262 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Function Description 1, 3 - 5, 7, 9, 12, 14, 16 Pin Number N/C No connection required. These pins may be connected to RF/ DC ground without affecting performance. 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6, 10 GND This pin and ground paddle must be connected to RC/DC ground. 8 RES This pin is used to set the DC current of the amplifier by selection of the external bias resistor. See application circuit. 11 RFOUT This pin is matched to 50 Ohms. 13, 15 Vdd2, Vdd1 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF, 1000pF, and 2.2 μF are required. Interface Schematic LOW NOISE AMPLIFIERS - SMT 5 Pin Descriptions Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 263 HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz Evaluation PCB LOW NOISE AMPLIFIERS - SMT 5 List of Material for Evaluation PCB 117905 [1] Item J1, J2 Description PCB Mount SMA RF Connector J3 - J5 DC Pin C2, C4 1000 pF Capacitor, 0603 pkg. C3, C5 0.47 μF Capacitor, Tantalum L1 15nH, Inductor, 0603 pkg L3 6.8nH, Inductor, 0603 pkg C6 220pF Capacitor, 0402 pkg C1 10nF Capacitor, 0402 pkg R1 10k Ohm resistor, 0402 pkg U1 HMC618LP3(E) Amplifier PCB [2] 120586 Evaluation PCB The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350. 5 - 264 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC618LP3 / 618LP3E v04.0508 GaAs SMT PHEMT LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz 5 LOW NOISE AMPLIFIERS - SMT Notes: For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 - 265