Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Typical Applications Features The HMC376LP3 / HMC376LP3E is ideal for: Noise Figure: 0.7 dB • Cellular/3G Infrastructure Output IP3: +36 dBm • Base Stations & Repeaters Gain: 15 dB • CDMA, W-CDMA, & TD-SCDMA Externally Adjustable Supply Current • Private Land Mobile Radio Single Positive Supply: +5V • GSM/GPRS & EDGE 50 Ohm Matched Input/Output • UHF Reallocation Applications Functional Diagram General Description The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E). Electrical Specifi cations, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms* Parameter Min. Frequency Range Gain 12.5 Gain Variation Over Temperature Typ. Max. Min. 810 - 960 Typ. Max. 700 - 1000 14.5 11.5 MHz 14.5 dB 0.005 0.01 0.005 0.01 Noise Figure 0.7 1.0 0.7 1.0 Input Return Loss 13 14 dB Output Return Loss 12 12 dB Reverse Isolation dB / °C dB 20 22 dB 21.5 21 dBm Saturated Output Power (Psat) 22 22 dBm Output Third Order Intercept (IP3) (-20 dBm Input Power per tone, 1 MHz tone spacing) 36 36 dBm Supply Current (Idd) 73 73 mA Output Power for 1dB Compression (P1dB) *Rbias resistor value sets current, see application circuit herein. 7-1 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 20 15 18 S21 S11 S22 -5 -15 0.75 1 1.25 1.5 FREQUENCY (GHz) 1.75 2 0.6 +25 C +85 C -40 C 1 1.1 -5 RETURN LOSS (dB) RETURN LOSS (dB) 0.8 0.9 FREQUENCY (GHz) 0 -5 -10 -15 -20 -10 -15 +25 C +85 C -40 C -20 -25 -25 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 0.6 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 1 1.1 Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 1.6 NOISE FIGURE (dB) -5 ISOLATION (dB) 0.7 Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -10 -15 -20 -25 0.6 14 10 0.5 Input Return Loss vs. Temperature 0.6 16 12 -25 0.25 +25C +85C - 40C AMPLIFIERS - LOW NOISE - SMT 25 5 7 Gain vs. Temperature GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss +25 C +85 C -40 C 1.2 0.8 0.4 0 0.7 0.8 0.9 FREQUENCY (GHz) 1 1.1 0.6 0.7 0.8 0.9 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-2 HMC376LP3 / 376LP3E v01.0610 Psat vs. Temperature @ Idd = 73 mA 25 25 23 23 Psat (dBm) P1dB (dBm) P1dB vs. Temperature @ Idd = 73 mA 21 +25 C +85 C -40 C 19 17 15 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 Output IP3 vs. Temperature @ Idd = 73 mA 0.7 0.95 1 1 22 GAIN (dB) & P1dB (dBm) 36 34 +25 C +85 C -40 C 32 0.75 0.8 0.85 0.9 20 Noise figure 0.8 GAIN P1dB 18 0.6 16 14 0.95 1 12 60 0.4 70 FREQUENCY (GHz) Absolute Maximum Ratings 80 90 100 110 120 SUPPLY CURRENT (mA) Typical Supply Current vs. Vdd with Rbias = 10 Ohms Drain Bias Voltage (Vdd) +8.0 Vdc Vdd (Vdc) RF Input Power (RFIN)(Vs = +5.0 Vdc) +15 dBm +4.5 73.0 Channel Temperature 150 °C +5.0 73.4 Continuous Pdiss (T = 85 °C) (derate 11.83 mW/°C above 85 °C) 0.769 W +5.5 73.6 Thermal Resistance (channel to ground paddle) 84.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 7-3 0.8 0.85 0.9 FREQUENCY (GHz) 24 38 IP3 (dBm) 0.75 Gain, Noise Figure & Power vs. Supply Current @ 900 MHz 40 30 0.7 +25 C +85 C -40 C 19 17 15 0.7 21 Idd (mA) Recommended Bias Resistor Values for Various Idd Idd (mA) Rbias (Ohms) 60 12 70 10 80 9.1 100 6.8 120 5.1 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com NOISE FIGURE (dB) AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 7 AMPLIFIERS - LOW NOISE - SMT Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC376LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC376LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] H376 XXXX [2] H376 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-4 HMC376LP3 / 376LP3E v01.0610 AMPLIFIERS - LOW NOISE - SMT 7 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Pin Descriptions Pin Number Function Description 1, 4, 5, 7, 9, 12 - 14, 16 N/C No connection necessary. These pins may be connected to RF/DC ground. Performance will not be affected. 2 RFIN This pin is matched to 50 Ohms with a 47 nH inductor to ground. See application circuit. 3, 6, 10 GND These pins and package bottom must be connected to RF/DC ground. 8 Res This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms from 0.7 - 1.0 GHz. 15 Vdd Power supply voltage. Choke inductor and bypass capacitors are required. See application circuit. Interface Schematic Application Circuit Note 1: L1, L2 and C1 should be located as close to the pins as possible. 7-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC376LP3 / 376LP3E v01.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz 7 AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 112585 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J4 DC Pin C1 1000 pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 15000 pF Capacitor, 0603 Pkg. L1 18 nH Inductor, 0603 Pkg. L2 47 nH Inductor, 0603 Pkg. R1 Resistor, 0402 Pkg. U1 HMC376LP3 / HMC376LP3E Amplifier PCB [2] 112580 Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7-6