Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC311LP3 / 311LP3E v05.1213 DRIVER & GAIN BLOCK AMPLIFIERS - SMT InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Typical Applications Features The HMC311LP3(E) is ideal for: P1dB Output Power: +15.5 dBm • Cellular / PCS / 3G Output IP3: +32 dBm • Fixed Wireless & WLAN Gain: 14.5 dB • CATV & Cable Modem 50 Ohm I/O’s • Microwave Radio 16 Lead 3x3mm SMT Package: 9mm2 Functional Diagram General Description The HMC311LP3(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifiers. This 3x3mm QFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC311LP3(E) offers 14.5 dB of gain and an output IP3 of +32 dBm while requiring only 56 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vs= 5V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. 13.0 12.5 12.0 14.5 14.3 14.0 Max. Units Gain DC - 1.0 GHz 1.0 - 4.0 GHz 4.0 - 6.0 GHz Gain Variation Over Temperature DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 0.005 0.008 0.012 Return Loss Input / Output DC - 1.0 GHz 1.0 - 3.0 GHz 3.0 - 6.0 GHz 13 11 15 dB dB dB DC - 6 GHz 18 dB 15.5 15.0 13.0 dBm dBm dBm Reverse Isolation 0.008 0.012 0.016 dB/ °C dB/ °C dB/ °C Output Power for 1 dB Compression (P1dB) DC - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz Output Third Order Intercept (IP3) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 4.0 - 6.0 GHz 32 30 28 24 dBm dBm dBm dBm DC - 6 GHz 4.5 dB Noise Figure Supply Current (Icq) 13.5 12.0 10.0 dB dB dB 55 74 mA Note: Data taken with broadband bias tee on device output. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC311LP3 / 311LP3E v05.1213 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Gain & Return Loss Gain vs. Temperature 15 17 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 14 +25 C +85 C -40 C 11 -10 -15 8 -20 5 -25 0 1 2 3 4 5 6 7 8 0 9 1 2 3 Input Return Loss vs. Temperature 6 7 8 0 +25 C +85 C -40 C -5 RETURN LOSS (dB) RETURN LOSS (dB) 5 Output Return Loss vs. Temperature 0 -10 -15 -20 +25 C +85 C -40 C -5 -10 -15 -20 0 1 2 3 4 5 6 7 8 0 1 2 3 FREQUENCY (GHz) 5 6 7 8 Noise Figure vs. Temperature 10 -5 8 NOISE FIGURE (dB) 0 +25 C +85 C -40 C -10 4 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 4 FREQUENCY (GHz) FREQUENCY (GHz) DRIVER & GAIN BLOCK AMPLIFIERS - SMT 20 20 -15 +25C +85C -40C 6 4 2 -20 0 -25 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 8 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC311LP3 / 311LP3E v05.1213 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz 20 16 16 Psat (dBm) P1dB (dBm) Psat vs. Temperature 20 12 8 +25 C +85 C -40 C 4 +25 C +85 C -40 C 8 0 0 1 2 3 4 5 6 7 8 0 1 2 FREQUENCY (GHz) 4 5 6 7 8 Power Compression @ 6 GHz Power Compression @ 1 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 0 Pout Gain PAE -5 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 15 10 5 0 Pout Gain PAE -5 -10 -20 -18 -16 -14 -12 -10 -8 8 INPUT POWER (dBm) +25 C +85 C -40 C 14 10 1 2 3 4 5 FREQUENCY (GHz) -2 0 2 4 6 6 7 8 80 40 35 60 30 25 40 20 15 20 10 5 0 0 4.5 4.75 5 5.25 5.5 Vs(V) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Icq (mA) 22 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 26 0 -4 Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 1 GHz 30 18 -6 INPUT POWER (dBm) 34 IP3 (dBm) 3 FREQUENCY (GHz) Output IP3 vs. Temperature 3 12 4 0 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - SMT P1dB vs. Temperature HMC311LP3 / 311LP3E v05.1213 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz Collector Bias Voltage (Vcc) +7V RF Input Power (RFIN)(Vs = +5V) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 5.21 mW/°C above 85 °C) 0.339 W Thermal Resistance (junction to ground paddle) 192 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE DRIVER & GAIN BLOCK AMPLIFIERS - SMT Absolute Maximum Ratings 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC311LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC311LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] 311 XXXX 311 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC311LP3 / 311LP3E v05.1213 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz DRIVER & GAIN BLOCK AMPLIFIERS - SMT Pin Descriptions Pin Number Function Description 1, 2, 4 - 9, 11 - 16 Interface Schematic N/C This pin may be connected to RF ground. 3 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.8 Rbias Recommended Component Values Component 5 Frequency (MHz) 50 900 1900 2200 2400 3500 5200 5800 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC311LP3 / 311LP3E v05.1213 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz DRIVER & GAIN BLOCK AMPLIFIERS - SMT Evaluation PCB J3 Pin Number Description 1, 2, 3 Vs 4, 5, 6 GND List of Materials for Evaluation PCB 106789 Item Description J1 - J2 PC Mount SMA Connector J3 2 mm DC Header C1, C2 Capacitor, 0402 Pkg. C3 10,000 pF Capacitor, 0805 Pkg. R1 22 Ohm Resistor, 0805 Pkg. L1 Inductor, 0805 Pkg. U1 HMC311LP3 / HMC311LP3E PCB [2] 106493 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6