Analog Devices Welcomes Hittite Microwave Corporation www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC441LC3B v07.0615 AMPLIFIERS - LINEAR & POWER - SMT GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Typical Applications Features The HMC441LC3B is ideal for use as a medium power amplifier for: Gain: 14 dB • Point-to-Point Radios Single Positive Supply: +5V @ 90 mA • Point-to-Multi-Point Radios & VSAT 50 Ohm Matched Input/Output • LO Driver for HMC Mixers 12 Lead Ceramic 3x3mm SMT Package: 9mm2 Saturated Output Power: +21.5 dBm @ 27% PAE • Military EW & ECM Functional Diagram General Description The HMC441LC3B is an efficient GaAs PHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 6 and 18 GHz, the amplifier provides 14 dB of gain, +21.5 dBm of saturated power and 27% PAE from a +5V supply. This 50 Ohm matched amplifier does not require any external components and operates from a single positive supply, making it an ideal linear gain block or driver for HMC SMT mixers. The HMC441LC3B is compatible with high volume surface mount manufacturing techniques, and the I/Os are DC blocked for further ease of integration. Electrical Specifications, TA = +25° C, Vdd = +5V Parameter Min. Frequency Range Gain 10 Gain Variation Over Temperature Max. Min. Typ. Max. Min. 8.5 - 12.5 14 19 0.015 0.02 13 Typ. Max. Min. 12.5 - 14.0 17 21 0.015 0.02 13 Typ. Max. 14.0 - 18.0 17 21 0.015 0.02 10 Units GHz 14 19 dB 0.015 0.02 dB/ °C Input Return Loss 10 13 20 13 dB Output Return Loss 12 15 17 14 dB 20 dBm 21.5 dBm Output Power for 1 dB Compression (P1dB) 16 Saturated Output Power (Psat) Output Third Order Intercept (IP3) 1 Typ. 6.0 - 8.5 19 17 20 28 20 17 21.5 30 29 20 17 22.5 32 29 32 29 32 dBm Noise Figure 4.5 6 4.5 6 4.5 6 4.5 6 dB Supply Current (Idd) 90 115 90 115 90 115 90 115 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC441LC3B v07.0615 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz 20 15 18 10 16 14 5 0 -5 -10 12 10 8 6 -15 4 -20 2 -25 0 4 6 8 10 12 14 16 18 20 6 7 8 9 10 FREQUENCY (GHz) S21 11 12 13 14 15 16 17 18 FREQUENCY (GHz) S11 +25 C S22 Input Return Loss vs. Temperature +85 C -40 C Output Return Loss vs. Temperature 0 0 -2 -4 RETURN LOSS (dB) RETURN LOSS (dB) -5 -10 -15 -20 -6 -8 -10 -12 -14 -16 -18 -25 -20 6 7 8 9 10 11 12 13 14 15 16 17 18 6 7 8 9 10 FREQUENCY (GHz) +25 C +85 C -40 C 12 +25 C P1dB vs. Temperature 13 14 15 16 17 18 +85 C -40 C Psat vs. Temperature 25 25 24 24 23 23 22 22 Psat (dBm) P1dB (dBm) 11 FREQUENCY (GHz) AMPLIFIERS - LINEAR & POWER - SMT Gain vs. Temperature 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss 21 20 19 21 20 19 18 18 17 17 16 16 15 15 6 7 8 9 10 11 12 13 14 15 16 17 18 6 7 8 9 10 FREQUENCY (GHz) +25 C +85 C 11 12 13 14 15 16 17 18 FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC441LC3B v07.0615 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Power Compression @ 11 GHz Power Compression @ 15 GHz Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 30 25 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 25 20 15 10 5 0 -10 10 -8 -6 -4 INPUT POWER (dBm) Pout Gain 2 4 6 8 10 Gain PAE Noise Figure vs. Temperature 36 10 34 9 8 NOISE FIGURE (dB) 32 30 28 26 24 7 6 5 4 3 2 22 1 20 0 6 7 8 9 10 11 12 13 14 15 16 17 6 18 7 8 9 10 FREQUENCY (GHz) +25 C 11 12 13 14 15 16 17 18 FREQUENCY (GHz) +85 C -40 C +25 C +85 C -40 C Reverse Isolation vs. Temperature 0 34 32 -10 30 ISOLATION (dBm) GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 0 Pout PAE Gain, Power & Output IP3 vs. Supply Voltage @ 11 GHz 28 26 24 22 20 18 -20 -30 -40 -50 16 -60 14 4.5 5 5.5 6 7 8 9 10 Gain P1dB 11 12 13 14 15 16 17 18 FREQUENCY (GHz) Vdd (V) 3 -2 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) AMPLIFIERS - LINEAR & POWER - SMT 30 Psat IP3 +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC441LC3B v07.0615 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz Drain Bias Voltage (Vdd) +6 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 8.2 mW/°C above 85 °C) 0.74 W Thermal Resistance (channel to ground paddle) 122 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 0, Passed 125V Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +5.5 92 +5.0 90 +4.5 88 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LINEAR & POWER - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC441LC3B Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H441 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC441LC3B v07.0615 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - SMT Pin Descriptions 5 Pin Number Function Description 1, 3, 7, 9 GND Package bottom must also be connected to RF/DC ground 2 RFIN This pin is AC coupled and matched to 50 Ohms. 4-6 10, 12 N/C This pin may be connected to RF/DC ground. Performance will not be affected. 8 RFOUT This pin is AC coupled and matched to 50 Ohms. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Interface Schematic Application Circuit Component Value C1 100 pF C2 1,000 pF C3 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC441LC3B v07.0615 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - SMT Evaluation PCB List of Materials for Evaluation PCB 109712 Item Description J1 - J2 PCB Mount SMA Connector J3 - J4 DC Pin C1 100 pF Capacitor, 0402 Pkg. C2 1000 pF Capacitor, 0603 Pkg. C3 2.2 µF Capacitor, Tantalum U1 HMC441LC3B Amplifier PCB [2] 109710 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6