Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Applications Features The HMC392 is ideal for: Gain: 15.5 dB • Point-to-Point Radios Noise Figure: 2.4 dB • VSAT Single Supply Voltage: +5V 50 Ohm Matched Input/Output • LO Driver for HMC Mixers 3 • Military EW, ECM, C I No External Components Required • Space Small Size: 1.3 x 1.0 x 0.1 mm Functional Diagram General Description The HMC392 is a GaAs MMIC Low Noise Amplifier die which operates between 3.5 and 7.0 GHz. The amplifier provides 15.5 dB of gain, 2.4 dB noise figure, and 28 dBm IP3 from a +5V supply voltage. The HMC392 has six bonding adjustment options which allow the user to select the bias point and output power of the device (+15 to +18 dBm). The HMC392 amplifier can easily be integrated into Multi-ChipModules (MCMs) due to its small (1.3 mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd = 5V Parameter Min. Frequency Range Gain Typ. Max. Min. 4.0 - 6.0 13 Typ. Max. 3.5 - 7.0 GHz 15.5 19 14 19 dB 0.018 0.025 0.018 0.025 dB/ °C Noise Figure 2.4 3.0 2.8 3.4 dB Input Return Loss 15 10 Output Return Loss 15 10 dB 16 dBm 18 dBm Gain Variation Over Temperature Output Power for 1 dB Compression (P1dB) 13 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Supply Current (Idd) 16 11.5 12 18 25 28 50 23 66 dB 28 50 dBm 66 Note: Data taken with pads PS4 and PS8 bonded to ground (state 5) unless otherwise noted. 1 - 20 Units For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com mA HMC392 v02.0907 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 1 Gain vs. Temperature 20 20 15 17 5 S21 S11 S22 0 GAIN (dB) RESPONSE (dB) 10 -5 14 +25C +85C -55C 11 -10 -15 8 -20 -25 5 2 3 4 5 6 7 8 9 3 4 5 FREQUENCY (GHz) Input Return Loss vs. Temperature 8 0 +25C +85C -55C +25C +85C -55C -5 RETURN LOSS (dB) -5 RETURN LOSS (dB) 7 Output Return Loss vs. Temperature 0 -10 -15 -10 -15 -20 -20 -25 -25 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 3 8 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 7.5 8 FREQUENCY (GHz) FREQUENCY (GHz) Noise Figure vs. Temperature Reverse Isolation vs. Temperature 0 5 4.5 +25C +85C -55C 4 -10 3.5 ISOLATION (dB) NOISE FIGURE (dB) 6 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP Broadband Gain & Return Loss 3 2.5 2 1.5 1 +25C +85C -55C -20 -30 -40 -50 0.5 0 -60 3 3.5 4 4.5 5 5.5 6 FREQUENCY (GHz) 6.5 7 7.5 8 3 3.5 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 21 HMC392 v02.0907 P1dB vs. Temperature Psat vs. Temperature 22 22 +25C +85C -55C 20 18 Psat (dBm) P1dB (dBm) 20 16 18 16 14 14 12 12 10 +25C +85C -55C 10 3 4 5 6 7 8 3 4 5 FREQUENCY (GHz) 28 +25C +85C -55C 24 22 20 4 5 6 7 8 GAIN (dB), NOISE FIGURE (dB), P1dB (dBm) 30 3 16 GAIN NOISE FIGURE P1dB 12 8 4 0 4.5 4.75 5 5.5 Gain & Noise Figure vs. Power Select State 22 18 16 GAIN, NOISE FIGURE (dB) 20 P1dB (dBm) 5.25 Vs (V) P1dB vs. Power Select State 18 16 14 State 1 Idd=75mA State 2 Idd=62mA State 3 Idd=55mA State 4 Idd=65mA State 5 Idd=50mA State 6 Idd=46mA 12 14 12 10 Gain State 1 Gain State 2 Gain State 3 Gain State 4 Gain State 5 Gain State 6 8 6 NF State 1 NF State 2 NF State 3 NF State 4 NF State 5 NF State 6 4 2 0 4 4.5 5 5.5 FREQUENCY (GHz) 1 - 22 8 20 FREQUENCY (GHz) 10 3.5 7 Gain, Noise Figure & Power vs. Supply Voltage @ 5.5 GHz 32 26 6 FREQUENCY (GHz) Output IP3 vs. Temperature IP3 (dBm) LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz 6 6.5 3 3.5 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7.5 8 HMC392 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Typical Supply Current vs. Vdd Absolute Maximum Ratings Drain Bias Voltage (Vdd) 7 Vdc RF Input Power (RFIN)(Vdd = +5 Vdc) +11 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 7.1 mW/°C above 85 °C) 0.64 W Thermal Resistance (channel to die bottom) 140 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85° C Vdd (Vdc) Idd (mA) +4.5 49 +5.0 50 +5.5 51 (State 5 Depicted) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate WP-16 (Waffle Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP v02.0907 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 23 HMC392 v02.0907 LOW NOISE AMPLIFIERS - CHIP 1 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Pad Descriptions Pad Number Function 2 RFIN Description Interface Schematic This pad is AC coupled and matched to 50 Ohms Power Select 3 4 PS3 PS4 One of these pads must be connected to ground. See Power Select Table for selection criteria. Power Select 7 8 9 PS7 PS8 PS9 1, 5 Vdd, Vdd (alt.) 6 RFOUT Die Bottom GND One of these pads must be connected to ground. See Power Select Table for selection criteria. Power supply voltage. Connect either pad1 or pad5 to +5V supply. No choke inductor or bypass capacitor is needed. This pad is AC coupled and matched to 50 Ohms Die bottom must be connected to RF/DC ground. Power Select Table 1 - 24 State Pads Bonded to Ground Typical Idd (mA) Typical P1dB (dBm) 1 PS3 & PS7 75 18.4 2 PS3 & PS8 62 17.9 3 PS3 & PS9 55 16.4 4 PS4 & PS7 65 17.7 5 PS4 & PS8 50 16.9 6 PS4 & PS9 46 15.5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC392 v02.0907 GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Note: State 5 shown. PS4 and PS8 bonded to ground. LOW NOISE AMPLIFIERS - CHIP 1 Assembly Diagram Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 25