Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC395 V02.0109 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features An excellent cascadable 50 Ohm Gain Block or LO Driver for: Gain: 15 dB • Microwave & VSAT Radios Stable Gain Over Temperature • Test Equipment 50 Ohm I/O’s • Military EW, ECM, C3I Small Size: 0.38 x 0.58 x 0.1 mm P1dB Output Power: +16 dBm • Space Telecom Functional Diagram General Description The HMC395 die is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC DC - 4 GHz amplifier. This amplifier die can be used as either a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power. The HMC395 offers 16 dB of gain and an output IP3 of +31 dBm while requiring only 54 mA from a +5V supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. The HMC395 can easily be integrated into Multi-ChipModules (MCMs) due to its small (0.22mm2) size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1mil) diameter wire bonds of minimal length 0.5mm (20mils). Electrical Specifi cations, Vs= +5.0V, Rbias= 22 Ohm, TA = +25° C Parameter Min. Typ. Max. Gain 16 15 dB dB Gain Variation Over Temperature DC - 1.0 GHz 1.0 - 4.0 GHz 0.004 0.008 dB/ °C dB/ °C Input Return Loss DC - 1.0 GHz 1.0 - 4.0 GHz 18 15 dB dB Output Return Loss DC - 1.0 GHz 1.0 - 4.0 GHz 17 10 dB dB Reverse Isolation DC - 4.0 GHz 19 dB Output Power for 1 dB Compression (P1dB) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 16 15 10 dBm dBm dBm Output Third Order Intercept (IP3) DC - 1.0 GHz 1.0 - 2.0 GHz 2.0 - 4.0 GHz 31 28 22 dBm dBm dBm Noise Figure DC - 4.0 GHz 4.5 dB 54 mA Supply Current (Icq) Note: Data taken with broadband bias tee on device output. 2-2 Units DC - 1.0 GHz 1.0 - 4.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC395 V02.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Gain & Return Loss Gain vs. Temperature 2 20 20 15 GAIN (dB) RESPONSE (dB) S21 5 S11 0 S22 -5 14 +25C +85C -55C 11 -10 -15 8 -20 5 -25 0 1 2 3 4 5 6 7 0 8 1 2 Input Return Loss vs. Temperature 5 0 RETURN LOSS (dB) +25C +85C -55C -5 RETURN LOSS (dB) 4 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 +25C +85C -55C -5 -10 -15 -20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 1 2 FREQUENCY (GHz) 4 5 Noise Figure vs. Temperature 10 -5 8 NOISE FIGURE (dB) 0 +25C +85C -55C -10 3 FREQUENCY (GHz) Reverse Isolation vs. Temperature REVERSE ISOLATION (dB) 3 FREQUENCY (GHz) FREQUENCY (GHz) -15 -20 DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 17 10 +25C +85C -55C 6 4 2 -25 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz) 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2-3 HMC395 V02.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature 2 Psat vs. Temperature 20 20 +25C +85C -55C Psat (dBm) P1dB (dBm) 17 14 11 8 11 +25C +85C -55C 5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 FREQUENCY (GHz) Power Compression @ 1 GHz 3 3.5 4 4.5 5 Power Compression @ 4 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 20 15 10 5 Pout Gain PAE 0 -5 -10 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 15 10 5 0 -10 -20 8 Pout Gain PAE -5 -16 -12 INPUT POWER (dBm) +25C +85C -55C 14 10 1.5 2 2.5 3 3.5 FREQUENCY (GHz) 0 4 4 4.5 5 80 40 35 60 30 25 40 20 15 10 5 Gain P1dB Psat OIP3 Icq 0 0 4.5 20 4.75 5 5.25 Vs(Vdc) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 Icq (mA) 22 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 26 1 -4 Gain, Power, Output IP3 & Supply Current vs.Supply Voltage @ 1 GHz 34 18 -8 INPUT POWER (dBm) Output IP3 vs. Temperature IP3 (dBm) 2.5 FREQUENCY (GHz) 30 2-4 14 8 5 Pout (dBm), GAIN (dB), PAE (%) DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 17 HMC395 V02.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings +7.0 Vdc RF Input Power (RFIN)(Vcc = +5.0 Vdc) +10 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 7.3 mW/°C above 85 °C) 0.475 W Thermal Resistance (junction to die bottom) 137 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004” (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004” (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD Die Packaging Information [1] Standard Alternate GP-3 (Gel Pack) [2] DRIVER & GAIN BLOCK AMPLIFIERS - CHIP Collector Bias Voltage (Vcc) [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2-5 HMC395 V02.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pad Descriptions DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Pad Number Function Description Interface Schematic 1 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 2 RFOUT RF output and DC Bias for the output stage. Die Bottom GND Die bottom must be connected to RF/DC ground. Application Circuit Note: 1. Select Rbias to achieve Icq using equation below, Rbias > 22 Ohm. 2. External blocking capacitors are required on RFIN and RFOUT. Icq = Vs - 3.9 Rbias Recommended Component Values Frequency (MHz) Component 50 2-6 100 500 1000 4000 L1 270 nH 270 nH 100 nH 56 nH 8.2 nH C1, C2 0.01 μF 0.01 μF 500 pF 100 pF 100 pF For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC395 V02.0109 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Assembly Diagram Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. DRIVER & GAIN BLOCK AMPLIFIERS - CHIP 2 Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2-7