MBR20H200CT, MBRF20H200CT, SB20H200CT-1 Datasheet

MBR20H200CT, MBRF20H200CT, SB20H200CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
FEATURES
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
2
• Solder dip 275 °C max., 10 s per JESD 22-B106
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MBRF20H200CT
MBR20H200CT
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
1
2
Case: TO-220AB, ITO-220AB, and TO-262AA 
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
3
SB20H200CT-1
PIN 1
PIN 2
PIN 3
CASE
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
VRRM
200 V
IFSM
290 A
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum



VF
0.75 V
TJ max.
175 °C
Package
TO-220AB, ITO-220AB, TO-262AA
Diode variations
Common cathode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Maximum repetitive peak reverse voltage
VRRM
200
V
Working peak reverse voltage
VRWM
200
V
Maximum DC blocking voltage
VDC
200
V
Maximum average forward rectified current
total device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed 
on rated load per diode
IF(AV)
20
10
A
IFSM
290
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 μs waveform)
ERSM
20
mJ
Non-repetitive avalanche energy per diode at 25 °C, IAS = 2.0 A, L = 10 mH
EAS
20
mJ
Electrostatic discharge capacitor voltage 
human body model air discharge: C = 100 pF, R = 1.5 k
VC
25
kV
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
A
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
VAC
1500
V
Revision: 17-Aug-15
Document Number: 88786
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H200CT, MBRF20H200CT, SB20H200CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
SYMBOL
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 25 °C
IF = 20 A
Maximum reverse current per diode 
at working peak reverse voltage
VF (1)
TC = 125 °C
MAX.
0.81
0.88
0.65
0.75
0.87
0.97
0.74
TJ = 25 °C
4.0 V, 1 MHz
UNIT
V
0.85
IR (1)
TJ = 125 °C
Typical junction capacitance
TYP.
CJ
5.0
μA
1.0
mA
250
pF
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
SB
UNIT
RJC
2.0
4.0
2.0
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
MBR20H200CT-E3/45
PREFERRED P/N
2.06
45
50/tube
DELIVERY MODE
Tube
ITO-220AB
MBRF20H200CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB20H200CT-1E3/45
1.58
45
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
25
Average Forward Current (A)
Average Forward Current (A)
MBR, MBRB
20
MBRF
15
10
5
0
25
50
75
100
125
150
175
350
325
300
275
250
225
200
175
150
125
100
75
50
25
0
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 17-Aug-15
Document Number: 88786
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H200CT, MBRF20H200CT, SB20H200CT-1
www.vishay.com
Vishay General Semiconductor
10 000
TJ = 175 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
0.1
0.1
1000
100
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.1
1
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
Fig. 5 - Typical Junction Capacitance Per Diode
10 000
100
1000
TJ = 175 °C
100
TJ = 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TJ = 75 °C
10
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10
MBRF
1
0.1
0.01
MBR, MBRB
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 17-Aug-15
Document Number: 88786
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H200CT, MBRF20H200CT, SB20H200CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
TYP.
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.408 (10.36)
0.392 (9.96)
0.138 (3.50)
0.122 (3.10)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
1
0.634 (16.10)
0.618 (15.70)
PIN
2 3
0.118 (3.00)
TYP.
0.638 (16.20)
0.598 (15.20)
0.630 (16.00)
0.614 (15.60)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
1
0.264 (6.70)
0.248 (6.50)
PIN
2 3
0.270 (6.88)
0.255 (6.48)
0.320 (8.12)
0.304 (7.72)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.035 (0.90)
0.028 (0.70)
0.100 (2.54)
TYP.
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
1.29 (3.28)
DIA.
1.21 (3.08)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.039 (1.00)
0.024 (0.60)
0.024 (0.60)
0.018 (0.45)
0.058 (1.47)
MAX.
0.100
(2.54) TYP.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
PIN
1 2 3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
Revision: 17-Aug-15
Document Number: 88786
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000