Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC788ALP2E v00.0913 AMPLIFIERS - DRIVER & GAIN BLOCK - SMT pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Typical Applications Features The HMC788ALP2E is ideal for: P1dB Output Power: +20 dBm • Cellular/3G & LTE/WiMAX/4G Output IP3: +33 dBm • LO Driver Applications Gain: 14 dB • Microwave Radio 50 Ohm I/O’s • Test & Measurement Equipment 6 Lead 2x2 mm DFN SMT Package: 4 mm2 • UWB Communications Functional Diagram General Description The HMC788ALP2E is a GaAs pHEMT Gain Block MMIC SMT DC to 10 GHz amplifier. This 2x2 mm DFN packaged amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of many of HIttite’s single and double-balanced mixers with up to +20 dBm output power. The HMC788ALP2E offers 14 dB of gain and an output IP3 of +33 dBm while requiring only 76 mA from a +5V supply. The Darlington feedback pair exhibits reduced sensitivity to normal process variations and yields excellent gain stability over temperature while requiring a minimal number of external bias components. Electrical Specifications, Vcc = 5V, TA = +25° C Parameter Min. Typ. 12 9 14 12 Max. Units dB dB Gain DC - 6.0 GHz 6.0 - 10.0 GHz Gain Variation Over Temperature DC - 6.0 GHz 6.0 - 10.0 GHz 0.004 0.007 dB/ °C dB/ °C Return Loss Input DC - 6.0 GHz 6.0 - 10.0 GHz 16 9 dB dB Return Loss Output DC - 6.0 GHz 6.0 - 10.0 GHz 9 12 dB dB Reverse Isolation DC - 6.0 GHz 6.0 - 10 GHz 23 20 dB dB Output Power for 1 dB Compression (P1dB) DC - 6.0 GHz 6.0 - 10.0 GHz 20 18 dBm dBm Output Third Order Intercept (IP3) DC - 6.0 GHz 6.0 - 10.0 GHz 33 30 dBm dBm Noise Figure DC - 6.0 GHz 6.0 - 10.0 GHz 6 7 dB Supply Current (Icq) 18 15 60 76 90 mA Note: Data taken with broadband bias tee on device output. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788ALP2E v00.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Broadband Gain & Return Loss Gain vs. Temperature 15 10 GAIN (dB) RESPONSE (dB) 20 0 10 -10 -20 5 -30 0 2 4 6 8 10 12 14 16 0 2 4 FREQUENCY (GHz) S21 S11 S22 +25 C 8 10 12 0 -5 -5 -10 -15 -20 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) Input Return Loss vs. Temperature -10 -15 -20 -25 -25 -30 -30 0 2 4 6 8 10 0 12 2 4 +25 C 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz) +85 C +25 C -40 C Reverse Isolation vs. Temperature 20 -15 15 -20 -25 +85 C -40 C Noise Figure vs. Temperature -10 NOISE FIGURE (dB) REVERSE ISOLATION (dB) 6 FREQUENCY (GHz) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT 20 30 10 5 0 -30 0 2 4 6 8 10 12 +25 C +85 C 0 2 4 6 8 10 12 FREQUENCY (GHz) FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC788ALP2E v00.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz 25 20 20 Psat (dBm) P1dB (dBm) Psat vs. Temperature 25 15 15 10 10 5 5 0 2 4 6 8 10 0 12 2 4 +25 C +85 C +25 C -40 C Power Compression @ 1 GHz 8 10 12 +85 C -40 C Power Compression @ 10 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 60 50 40 30 20 10 0 25 20 15 10 5 0 -10 -5 0 5 10 -10 INPUT POWER (dBm) Pout -5 0 5 10 INPUT POWER (dBm) Gain PAE Pout Output IP3 vs. Temperature [1] Gain PAE Gain & Power vs. Supply Voltage @ 1 GHz 45 GAIN (dB), P1dB (dBm), IP3 (dBm) 40 40 35 IP3 (dBm) 6 FREQUENCY (GHz) FREQUENCY (GHz) Pout (dBm), GAIN (dB), PAE (%) AMPLIFIERS - DRIVER & GAIN BLOCK - SMT P1dB vs. Temperature 30 25 20 15 30 20 10 10 0 2 4 6 8 10 12 +25 C +85 C 4.5 5 5.5 SUPPLY VOLTAGE (V) FREQUENCY (GHz) -40 C Gain P1dB IP3 [1] +5 dBm / Tone Output Power 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788ALP2E v00.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Absolute Maximum Ratings Collector Bias Voltage (Vcc) +7V Vcc (V) Icq (mA) RF Input Power (RFIN)(Vs = +5V) +15 dBm 4.5 65 Junction Temperature 150 °C 5.0 76 5.5 87 Continuous Pdiss (T = 85 °C) (derate 8.5 mW/°C above 85 °C) 0.55 W Thermal Resistance (junction to ground paddle) 118 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Typical Supply Current 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC788ALP2E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] 788A XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC788ALP2E v00.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz Pin Descriptions AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Pin Number 5 Function Description 1, 4, 6 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 RFIN This pin is DC coupled. An off chip DC blocking capacitor is required. 5 RFOUT RF output and DC Bias for the output stage. 3 GND This pin and exposed ground paddle must be connected to RF/DC ground. Interface Schematic Application Circuit For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC788ALP2E v00.0913 pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz List of Materials for Evaluation PCB EV1HMC788ALP2[1] Item Description J1 - J2 PC Mount SMA Connector J5, J6 DC Pin C1, C2 0.01 µF Capacitor, 0502 Pkg. C3 100 pF Capacitor, 0402 Pkg. C4 2.2 µF Case A Pkg. R1 0 Ohm Resistor, 0402 Pkg. L1 Inductor, Conical 6.35 µH U1 HMC788ALP2E PCB [2] 129549 Evaluation PCB AMPLIFIERS - DRIVER & GAIN BLOCK - SMT Evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6