Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Amplifiers - Linear & Power - Chip 3 Typical Applications Features The HMC930 is ideal for: High P1dB Output Power: 22 dBm • Test Instrumentation High Psat Output Power: 24 dBm • Microwave Radio & VSAT High Gain: 13 dB • Military & Space High Output IP3: 33.5 dBm • Telecom Infrastructure Supply Voltage: +10 V @ 175 mA • Fiber Optics 50 Ohm Matched Input/Output Die Size: 2.82 x 1.50 x 0.1 mm Functional Diagram General Description The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Electrical Specifications, TA = +25° C, Vdd = +10 V, Vgg = +3.5 V, Idd = 175 mA* Parameter Min. Frequency Range Gain Typ. Max. Min. DC - 12 11.5 13.5 Typ. Max. Min. 12 - 32 11 13 10 Typ. Max. Units 32 - 40 GHz 12 dB Gain Flatness ±0.5 ±0.3 ±1.0 dB Gain Variation Over Temperature 0.01 0.017 0.032 dB/ °C dB Input Return Loss 18 16 15 Output Return Loss 28 20 20 dB 20 dBm 23 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 21 23 20 22 25 24 18 Output Third Order Intercept (IP3) 36 33.5 29 dBm Noise Figure 4.5 5 7.5 dB Supply Current (Idd) (Vdd= 10V, Vgg1= -0.8V Typ.) 175 175 175 mA * Adjust Vgg1 between -2 to 0 V to achieve Idd = 175 mA typical. 3-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Gain & Return Loss Gain vs. Temperature 20 18 16 0 -10 -20 12 10 -30 +25C +85C -55C 8 -40 0 5 10 15 20 25 30 35 40 45 6 50 0 FREQUENCY (GHz) 8 12 -10 -10 RETURN LOSS (dB) 0 -20 20 24 28 32 36 40 44 +25C +85C -55C -20 -30 +25C +85C -55C -40 -40 0 4 8 12 16 20 24 28 32 36 40 0 44 4 8 12 20 24 28 32 36 28 32 40 44 Noise Figure vs. Temperature Low Frequency Gain & Return Loss 10 20 10 +25C +85C -55C NOISE FIGURE(dB) 8 0 S21 S11 S22 -10 -20 -30 6 4 2 -40 -50 0.00001 16 FREQUENCY (GHz) FREQUENCY (GHz) RESPONSE (dB) 16 Output Return Loss vs. Temperature 0 -30 4 FREQUENCY (GHz) Input Return Loss vs. Temperature RETURN LOSS (dB) 3 14 Amplifiers - Linear & Power - Chip S21 S11 S22 GAIN (dB) RESPONSE (dB) 10 0 0.0001 0.001 0.01 0.1 FREQUENCY (GHz) 1 10 0 4 8 12 16 20 24 36 40 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-2 HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz P1dB vs. Supply Voltage P1dB vs. Temperature 28 28 +25C +85C -55C 26 P1dB (dBm) 24 22 24 22 20 20 18 18 +8V +10V +11V 16 16 0 4 8 12 16 20 24 28 32 36 40 0 44 4 8 12 16 20 24 28 32 36 40 44 FREQUENCY (GHz) FREQUENCY (GHz) Psat vs. Temperature Psat vs. Supply Voltage 30 30 +25C +85C -55C 28 28 26 Psat (dBm) Psat (dBm) Amplifiers - Linear & Power - Chip 3 P1dB (dBm) 26 24 26 24 22 22 20 20 18 +8V +10V +11V 18 0 4 8 12 16 20 24 28 32 36 40 44 0 4 8 12 FREQUENCY (GHz) 16 20 24 28 32 36 40 44 32 36 40 44 FREQUENCY (GHz) P1dB vs. Supply Current Psat vs. Supply Current 28 28 26 26 22 Psat (dBm) P1dB (dBm) 24 20 18 24 22 125 mA 175 mA 20 16 125 mA 175 mA 14 18 16 12 0 4 8 12 16 20 24 28 FREQUENCY (GHz) 3-3 32 36 40 44 0 4 8 12 16 20 24 28 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Output IP3 vs. Supply Voltage @ Pout = 14 dBm / Tone 40 38 38 36 36 34 34 32 30 +25C +85C -55C 28 3 32 30 +8V +10V +11V 28 26 26 24 24 0 4 8 12 16 20 24 28 32 36 40 0 44 4 8 12 Output IP3 vs. Supply Currents @ Pout = 14 dBm / Tone 24 28 32 36 40 44 80 38 125 mA 175 mA 36 70 60 34 32 IM3 (dBc) IP3 (dBm) 20 Output IM3 @ Vdd = +8V 40 30 28 26 50 40 30 20 24 2 GHz 8 GHz 14 GHz 20 GHz 10 22 20 28 GHz 34 GHz 40 GHz 0 0 4 8 12 16 20 24 28 32 36 40 44 0 2 4 FREQUENCY (GHz) 70 70 60 60 50 50 IM3 (dBc) 80 40 30 2 GHz 8 GHz 14 GHz 20 GHz 10 8 10 12 14 16 14 16 Output IM3 @ Vdd = +11V 80 20 6 Pout/TONE (dBm) Output IM3 @ Vdd = +10V IM3 (dBc) 16 FREQUENCY (GHz) FREQUENCY (GHz) 40 30 20 28 GHz 34 GHz 40 GHz 2 GHz 8 GHz 14 GHz 20 GHz 10 0 Amplifiers - Linear & Power - Chip 40 IP3 (dBm) IP3 (dBm) Output IP3 vs. Temperature @ Pout = 14 dBm / Tone 28 GHz 34 GHz 40 GHz 0 0 2 4 6 8 10 Pout/TONE (dBm) 12 14 16 0 2 4 6 8 10 12 Pout/TONE (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-4 HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Power Compression @ 20 GHz Reverse Isolation vs. Temperature 32 +25C +85C -55C ISOLATION (dB) -20 -30 -40 -50 -60 -70 -80 28 Pout Gain PAE 24 20 16 12 8 4 0 0 4 8 12 16 20 24 28 32 36 40 44 0 3 6 9 12 15 FREQUENCY (GHz) INPUT POWER (dBm) Gain & Power vs. Supply Current @ 20 GHz Gain & Power vs. Supply Voltage @ 20 GHz 35 Gain (dB), P1dB (dBm), Psat (dBm) 35 Gain P1dB Psat 30 25 20 15 125 Gain P1dB Psat 30 25 20 15 10 10 135 145 155 165 8 175 9 Idd (mA) 10 11 Vdd (V) Power Dissipation 3 POWER DISSIPATION (W) Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - Chip 3 Pout (dBm), GAIN (dB), PAE (%) 0 -10 2 4 GHz 10 GHz 20 GHz 30 GHz 40 GHz 1 0 0 3 6 9 12 15 INPUT POWER (dBm) 3-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Second Harmonics vs. Temperature @ Pout = 14 dBm, Vdd = 10V & Vgg = 3.5V, 175mA Second Harmonics vs. Vdd @ Pout = 14 dBm, Idd = 175mA [1] 70 +25C +85C -40C 50 40 30 20 60 3 +8V +10V +11V 50 40 30 20 10 10 0 0 0 4 8 12 16 20 0 24 4 8 12 16 20 24 FREQUENCY(GHz) FREQUENCY(GHz) Second Harmonics vs. Pout Vdd = 10V & Vgg = 3.5V & Idd = 175mA SECOND HARMONIC (dBc) 70 +4 dBm +6 dBm +8 dBm +10 dBm +12 dBm +14 dBm 60 50 40 30 20 10 0 0 4 8 12 16 20 24 FREQUENCY(GHz) Absolute Maximum Ratings Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg1) Gate Bias Voltage (Vgg2) 12V Output Power into VSWR >7:1 24 dBm -3 to 0 Vdc Storage Temperature -65 to 150 °C For Vdd = 12V, Vgg2 = 5.5V Idd >145mA Operating Temperature -55 to 85 °C For Vdd between 8.5V to 11V, Vgg2 = (Vdd - 6.5V) up to 4.5V For Vdd < 8.5V, Vgg2 must remain > 2V RF Input Power (RFIN) 17 dBm Channel Temperature 150 °C Continuous Pdiss (T= 85 °C) (derate 69 mW/°C above 85 °C) 2.1 W Thermal Resistance (channel to die bottom) Amplifiers - Linear & Power - Chip 60 SECOND HARMONIC (dBc) SECOND HARMONIC (dBc) 70 31.1 °C/W ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +9 175 +10 175 +11 175 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3-6 HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Outline Drawing Amplifiers - Linear & Power - Chip 3 Die Packaging Information [1] Standard Alternate GP-1 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3-7 NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. DIE THICKNESS IS 0.004 (0.100) 3. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE 4. BOND PAD METALIZATION: GOLD 5. BACKSIDE METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND 7. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS 8. OVERALL DIE SIZE IS ±.002 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Pad Descriptions Function Description 1 RFIN This pad is DC coupled and matched to 50 Ohms. Blocking capacitor is required. 2 VGG2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +3.5V should be applied to Vgg2. 4, 7 ACG2, ACG4 Low frequency termination. Attach bypass capacitor per application circuit herein. 3 ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. 5 RFOUT & VDD RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 6 ACG3 Low frequency termination. Attach bypass capacitor per application circuit herein. 8 VGG1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 Amplifiers - Linear & Power - Chip Pad Number 3-8 HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Assembly Diagram Amplifiers - Linear & Power - Chip 3 Application Circuit NOTE 1: Drain Bias (Vdd) must be applied through a broadband bias tee with low series resistance and capable of providing 500mA 3-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. 3 Amplifiers - Linear & Power - Chip The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 3 - 10