TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC943LP5E v02.0113 Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm • Point-to-Multi-Point Radios High Gain: 21 dB • VSAT DC Supply: +5.5V @ 1200 mA • Military & Space No External Matching Required TE 32 Lead 5 x 5 mm SMT Package: 25 mm² Functional Diagram General Description LE The HMC943LP5E is a four stage GaAs pHEMT MMIC 1.5 Watt Power Amplifier which operates between 24 and 31.5 GHz. The HMC943LP5E provides 21 dB of gain, and +34 dBm of saturated output power and 24% PAE from a +5.5V supply. The high output IP3 of +41 dBm makes the HMC943LP5E ideal for microwave radio applications. The HMC943LP5E amplifier I/Os are internally matched to 50 Ohms and is packaged in a leadless QFN 5 x 5 mm surface mount package and requires no external matching components. B SO Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz O Electrical Specifications, TA = +25° C, Vd1 = Vd8 = +5.5V, Idd = 1200 mA [1] Parameter Min. Frequency Range Gain 18 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Typ. Max. Min. 24 - 26.5 21 16 Max. Units GHz 19 dB 0.03 0.028 dB/ °C 9 9.5 dB 12 29 Typ. 26.5 - 31.5 32 27 12 dB 31 dBm Saturated Output Power (Psat) 33 33 dBm Output Third Order Intercept (IP3)[2] 41 39 dBm 1200 1200 mA Total Supply Current (Idd) [1] Adjust Vg1 and Vg2 between -2 to 0V to achieve Idd = 1200 mA typical. [2] Measurement taken at +5.5V @ 1200 mA, Pout / Tone = +22 dBm 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Broadband Gain & Return Loss vs. Frequency Gain vs. Temperature 26 10 GAIN (dB) 0 -10 22 18 TE RESPONSE (dB) 20 -20 14 -30 23 20 22 24 26 28 30 32 FREQUENCY (GHz) S21 34 36 38 25 26 S22 28 29 30 31 32 33 34 +85 C -40 C LE Output Return Loss vs. Temperature 0 0 -12 -16 -20 23 B SO -8 24 25 26 27 28 29 30 31 32 33 RETURN LOSS (dB) -4 -4 -8 -12 -16 -20 23 34 24 25 26 FREQUENCY (GHz) +25 C +85 C 32 33 +85 C 34 -40 C P1dB vs. Supply Voltage O 37 27 28 29 30 31 FREQUENCY (GHz) +25 C -40 C P1dB vs. Temperature 37 35 P1dB (dBm) 35 P1dB (dBm) 27 FREQUENCY (GHz) +25 C S11 Input Return Loss vs. Temperature RETURN LOSS (dB) 24 Amplifiers - Linear & Power - SMT 30 30 33 31 29 33 31 29 27 27 24 25 26 27 28 29 30 31 32 33 24 25 26 +25 C +85 C 27 28 29 30 31 32 33 FREQUENCY (GHz) FREQUENCY (GHz) -40 C +5.0V +5.5V +6.0V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz 37 37 Psat (dBm) 39 35 33 35 33 TE 31 29 29 24 25 26 27 28 29 30 31 32 33 24 FREQUENCY (GHz) +85 C 25 26 +5.0V -40 C +5.5V 32 33 +6.0V 39 37 37 35 31 27 24 B SO 33 29 25 26 27 28 29 30 31 32 35 33 31 29 24 33 25 26 FREQUENCY (GHz) 1000 mA 1200 mA 27 28 29 30 FREQUENCY (GHz) 1000 mA 1300 mA O 50 31 1200 mA 32 33 1300 mA Output IP3 vs. Supply Current, Pout/Tone = +22 dBm 50 45 45 IP3 (dBm) IP3 (dBm) 31 Psat vs. Supply Current (Idd) P1dB vs. Supply Current (Idd) Output IP3 vs. Temperature, Pout/Tone = +22 dBm 40 35 30 40 35 30 25 25 24 25 26 27 28 29 30 31 32 33 24 25 26 +25 C +85 C 27 28 29 30 31 32 33 FREQUENCY (GHz) FREQUENCY (GHz) 3 27 28 29 30 FREQUENCY (GHz) LE +25 C Psat (dBm) Psat (dBm) Psat vs. Supply Voltage 39 31 P1dB (dBm) Amplifiers - Linear & Power - SMT Psat vs. Temperature -40 C 1000 mA 1200 mA 1300 mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Output IP3 vs. Supply Voltage, Pout/Tone = +22 dBm Output IM3 @ Vdd = +5V 60 50 45 IM3 (dBc) IP3 (dBm) 40 40 35 30 20 TE 30 10 25 0 27 28 29 30 31 32 33 34 15 FREQUENCY (GHz) 18 +5.5V +6.0V 20 21 22 23 24 25 24 GHz 26 GHz 28 GHz 30 GHz 32 GHz Output IM3 @ Vdd = +6V 60 60 50 50 20 10 0 15 B SO 30 16 17 18 19 20 21 22 23 24 IM3 (dBc) 40 40 30 20 10 0 15 25 16 17 18 24 GHz 26 GHz 28 GHz 30 GHz 24 GHz 26 GHz 32 GHz 20 21 22 23 24 25 28 GHz 30 GHz 32 GHz Power Compression @ 29 GHz Power Compression @ 24 GHz O 36 19 Pout/TONE (dBm) Pout/TONE (dBm) 32 36 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 19 Pout/TONE (dBm) Output IM3 @ Vdd = +5.5V IM3 (dBc) 17 LE +5.0V 16 Amplifiers - Linear & Power - SMT 50 28 24 20 16 12 8 4 32 28 24 20 16 12 8 4 0 0 0 3 6 9 12 INPUT POWER (dBm) Pout Gain 15 18 PAE 0 3 6 9 12 INPUT POWER (dBm) Pout Gain 15 18 PAE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Power Compression @ 32 GHz Reverse Isolation -10 ISOLATION (dB) 28 24 20 16 12 -20 -30 -40 -50 TE 8 -60 4 -70 0 3 6 9 12 15 18 21 27 INPUT POWER (dBm) Pout Gain PAE +25 C B SO 30 1000 31 32 33 34 +85 C -40 C 40 35 15 30 Gain & Power vs. Supply Voltage @ 26 GHz 40 20 29 LE Gain & Power vs. Supply Current @ 26 GHz 25 28 FREQUENCY (GHz) 1100 1200 1300 Gain (dB), P1dB (dBm), Psat (dBm) Pout (dBm), GAIN (dB), PAE (%) 0 32 0 Gain (dB), P1dB (dBm), Psat (dBm) Amplifiers - Linear & Power - SMT 36 35 30 25 20 15 5 5.5 Idd (mA) Gain P1dB 6 Vdd (V) Psat Gain P1dB Psat Power Dissipation @ 6V, 1200 mA 9 POWER DISSIPATION (W) O 10 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 INPUT POWER (dBm) Max Pdis @ 85C 25GHz 26GHz 5 27GHz 28GHz 29GHz 10 11 12 13 30GHz 31GHz 32GHz For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Drain Bias Voltage (Vd) +7V RF Input Power (RFIN) Channel Temperature Vdd (V) Idd (mA) +20 dBm +5.0 1200 150 °C +5.5 1200 +6.0 1200 Continuous Pdiss (T= 85 °C) (derate 135 mW/°C above 85 °C) 8.8 W Thermal Resistance (channel to package bottom) 7.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ESD Sensitivity (HBM) Class 0, 150V TE Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1200 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS B SO LE Outline Drawing Amplifiers - Linear & Power - SMT Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC O SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTHSHALL BE 0.15mm MAX. PAD BURR HIEGHT SHALL BE 0.25mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED Package Information TO PCB RF GROUND. Part Number Package Body Material Lead Finish HMC943LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H943 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Function Description Interface Schematic 1, 3, 5, 8, 9, 16, 17, 20, 22, 24, 25, 32 GND These pins and package bottom must be connected to RF/DC ground. 2, 6, 7, 14, 18, 19, 23, 27 N/C These pins are not connected internally;however, all data shown herein was measured with these pins connected to RF/DC ground externally. 4 RFIN RF signal input. This pad is AC coupled and matched to 50 Ohms over the operating frequency range. 10, 31 VG1, VG2 Gate control for amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 11 - 13, 15, 26, 28 - 30 VD2, VD4, VD6, VD8, VD7, VD5, VD3, VD1 Drain bias for the amplifier. External bypass capacitors of 100 pF, 0.01 µF, and 4.7 µF are required on each. 21 RFOUT RF signal output. This pad is AC coupled and matched to 50 ohms over the operating frequency range. B SO LE TE Pin Number Application Circuit O Amplifiers - Linear & Power - SMT Pin Descriptions 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC943LP5E v02.0113 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Amplifiers - Linear & Power - SMT B SO LE TE Evaluation PCB O List of Materials for Evaluation PCB 130027 [1] Item Description J1, J2 SRI, K Connectors J3, J4 DC Pins C1 - C10 100 pF Capacitors, 0402 Pkg. C11 - C20 10000 pF Capacitors, 0402 Pkg. C21 - C30 4.7 µF Capacitors, Case A Pkg. U1 HMC943LP5E Power Amplifier PCB [2] 130025 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 or Arlon FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 8