Si5479DU Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.021 at VGS = - 4.5 V - 16.9 0.028 at VGS = - 2.5 V - 16 0.039 at VGS = - 1.8 V - 16 VDS (V) - 12 Qg (Typ.) 21 nC • • • • Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT PowerPAK ChipFET Single APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications 1 2 D 8 3 D D 4 D D G D 7 S Marking Code BB S 6 S 5 XXX Lot Traceability and Date Code G Part # Code Bottom View D P-Channel MOSFET Ordering Information: Si5479DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V - 16a - 16a - 10.3b, c - 8.3b, c - 20 - 14.8 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit - 12 ±8 - 2.6b, c 17.8 11.4 3.1b, c 2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 30 5.5 Maximum 40 7 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73368 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 Si5479DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 12 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 10.3 mV/°C 2.6 - 0.4 - 1.0 V ± 100 ns VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 4.5 V - 20 µA A VGS = - 4.5 V, ID = - 6.9 A 0.017 0.021 VGS = - 2.5 V, ID = - 6 A 0.023 0.028 VGS = - 1.8 V, ID = - 2.6 A 0.032 0.039 VDS = - 6 V, ID = - 6.9 A 24 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1810 VDS = - 6 V, VGS = 0 V, f = 1 MHz 490 VDS = - 6 V, VGS = - 8 V, ID = - 6.9 A 34 51 21 32 VDS = - 6 V, VGS = - 4.5 V, ID = - 6.9 A 3.1 f = 1 MHz 9.1 12 VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 20 35 55 76 115 tf 115 175 td(on) 6 12 td(off) tr td(off) nC 6 td(on) tr pF 640 VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 8 V, Rg = 1 Ω tf 13 20 77 115 100 150 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C - 14.9 - 20 IS = - 8.6 A, VGS = 0 V - 0.9 - 1.2 A V Body Diode Reverse Recovery Time trr 55 90 ns Body Diode Reverse Recovery Charge Qrr 28 45 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C 19 36 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 Si5479DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 5 thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 1.5 V 8 6 TC = 125 °C 4 25 °C 2 4 - 55 °C 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.8 1.2 1.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.10 2.0 3000 2500 0.08 C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) 0.4 0.06 VGS = 1.8 V 0.04 VGS = 2.5 V Ciss 2000 1500 1000 Coss 0.02 Crss 500 VGS = 4.5 V 0.00 0 0 4 8 12 16 20 0 2 4 8 10 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.4 8 7 1.3 ID = 6.9 A 6 5 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 VDS = 6 V 4 VDS = 9.6 V 3 2 VGS = 4.5, 2.5, 1.8 V ID = 6.9 A 1.2 1.1 1.0 0.9 0.8 0.7 1 0 0 5 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 10 15 20 25 30 35 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 Si5479DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 I S - Source Current (A) TJ = 150 °C TJ = 25 °C ID = 6.9 A 0.08 0.06 TA = 125 °C 0.04 TA = 25 °C 0.02 0.00 1 0.0 0.10 0.2 0.4 0.6 1.2 1.0 0.8 0 1.4 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 40 0.8 30 ID = 250 µA Power (W) VGS(th) (V) 0.7 0.6 20 0.5 10 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) Limited by RDS(on)* 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 0.01 0.1 TA = 25 °C Single Pulse DC 10 1 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 Si5479DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 16 Power Dissipation (W) ID - Drain Current (A) 25 20 Package Limited 15 10 12 8 4 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73368 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 Si5479DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 75 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73368. www.vishay.com 6 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000