New Product Si5476DU Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 60 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 Qg (Typ.) 10.5 nC PowerPAK ChipFET Single 1 2 3 D D Lot Traceability and Date Code 4 G D 7 XXX D D 8 AA Part # Code S 6 RoHS COMPLIANT APPLICATIONS Marking Code D • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile S 5 D • Load Switch for Portable Applications • DC-DC Switch for Low Power Synchronous Rectification • Intermediate Switch Driver G for DC/DC Applications Bottom View S Ordering Information: Si5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 12a ID 7b, c Avalanche Current Single Pulse Avalanche Energy 5.6b, c 25 IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C IAS 2.6b, c 15 EAS 11.2 mJ 31 20 PD W 3.1b, c TA = 70 °C 2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range A 12a IS TC = 25 °C Maximum Power Dissipation V 12a TA = 70 °C Pulsed Drain Current Unit Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t≤5s RthJA 34 40 Steady State RthJC 3 4 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73663 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 New Product Si5476DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 55 mV/°C - 6.3 1 3 V ± 100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V 25 µA A VGS = 10 V, ID = 4.6 A 0.028 0.034 VGS = 4.5 V, ID = 4.2 A 0.033 0.041 VDS = 15 V, ID = 4.6 A 20 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1100 VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.6 A VDS = 30 V, VGS = 4.5 V, ID = 4.6 A td(off) 21 32 10.5 16 3.5 f = 1 MHz VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω Ω 3.3 20 30 150 225 20 30 tf 60 90 td(on) 10 15 15 25 22 40 10 15 tr td(off) nC 4.2 td(on) tr pF 90 55 VDD = 30 V, RL = 5.4 Ω ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 12 25 IS = 5.5 A, VGS = 0 V IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.85 1.2 V 25 50 ns 25 50 nC 19 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 25 VGS = 10 thru 4 V 15 10 VGS = 3 V 5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3 TC = 125 °C 2 1 1.8 TC = 25 °C 0 0.0 2.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 3.5 1500 0.040 1200 0.036 VGS = 4.5 V C - Capacitance (pF) R DS(on) - On-Resistance (mΩ) TC = - 55 °C 4 ID - Drain Current (A) ID - Drain Current (A) 20 0.032 VGS = 10 V 0.028 Ciss 900 600 300 Coss 0.024 0 5 10 15 20 25 0 10 20 30 40 50 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 60 2.0 10 ID = 4.6 A 1.8 8 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) Crss 0 6 VDS = 30 V VDS = 48 V 4 VGS = 10 V ID = 4.6 A 1.6 1.4 1.2 1.0 2 0.8 0 0 5 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 www.vishay.com 3 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 0.08 10 TJ = 25 C On-Resistance (Ω) RDS(on) - Drain-to-Source TJ = 150 C I S - Source Current (A) ID = 4.6 A 0.07 0.06 TA = 125 C 0.05 0.04 0.03 TA = 25 C 1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.6 50 2.4 2.0 Power (W) VGS(th) (V) 40 ID = 250 µA 2.2 1.8 1.6 30 20 1.4 10 1.2 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 BVDSS Limited Limited by R DS(on)* 100 µs ID - Drain Current (A) 10 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 0.01 0.1 * VGS 1s 10 s DC 1 1 00 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 New Product Si5476DU Vishay Siliconix 24 35 20 30 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 16 Package Limited 12 8 4 25 20 15 10 5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73663 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73663. www.vishay.com 6 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 Package Information www.vishay.com Vishay Siliconix PowerPAK® ChipFET® Case Outline D (7) (6) (5) (1) (2) (3) (4) E (8) Pin #1 indicator Side view of single e b H D1 D(2) D2 K D(3) L G(4) K1 D2 SI(1) GI(2) S2(3) D1(8) D1(7) D2(6) Detail Z G2(4) K2 L D(1) A1 C A Z Side view of dual E1 E2 E3 H D3 D(8) D(7) D(6) S(5) K3 Backside view of dual pad Backside view of single pad DIM. D2(5) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.85 0.028 0.030 0.033 A1 0 - 0.05 0 - 0.002 b 0.25 0.30 0.35 0.010 0.012 0.014 C 0.15 0.20 0.25 0.006 0.008 0.010 D 2.92 3.00 3.08 0.115 0.118 0.121 D1 1.75 1.87 2.00 0.069 0.074 0.079 D2 1.07 1.20 1.32 0.042 0.047 0.052 D3 0.20 0.25 0.30 0.008 0.010 0.012 E 1.82 1.90 1.98 0.072 0.075 0.078 E1 1.38 1.50 1.63 0.054 0.059 0.064 E2 0.92 1.05 1.17 0.036 0.041 0.046 E3 0.45 0.50 0.55 0.018 0.020 0.022 e 0.65 BSC 0.026 BSC H 0.15 0.20 0.25 0.006 0.008 0.010 K 0.25 - - 0.010 - - K1 0.30 - - 0.012 - - K2 0.20 - - 0.008 - - K3 0.20 - - 0.008 - - L 0.30 0.35 0.40 0.012 0.014 0.016 C14-0630-Rev. E, 21-Jul-14 DWG: 5940 Note • Millimeters will govern Document Number: 73203 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 21-Jul-14 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® ChipFET® Single 0.225 (0.009) 0.350 (0.014) 0.650 (0.026) 0.200 (0.008) 0.300 (0.012) 0.300 (0.012) 0.100 (0.004) 1.500 (0.059) 1.900 (0.075) 0.250 (0.010) 0.500 (0.020) 0.350 (0.014) 0.350 (0.014) 1.870 (0.074) 0.305 (0.012) 2.575 (0.101) Recommended Minimum Pads Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 69948 Revision: 21-Jan-08 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000