Si5938DU Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = 4.5 V 6 0.045 at VGS = 2.5 V 6 0.055 at VGS = 1.8 V 6 VDS (V) 20 Qg (Typ.) 6 nC PowerPAK ChipFET Dual CA G1 XXX 3 4 S2 D2 Part # Code G2 D2 6 COMPLIANT Lot Traceability and Date Code D1 D1 • Load Switch for Portable Applications • DC-DC Point-of-Load D1 Marking Code 2 S1 7 RoHS APPLICATIONS 1 8 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile G1 D2 G2 5 S1 S2 N-Channel MOSFET N-Channel MOSFET Bottom View Ordering Information: Si5938DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IS PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V 6a 6a 7.2b, c 5.8b, c 20 6.9 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 20 ±8 A 1.9b, c 8.3 5.3 2.3b, c 1.5b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 45 12 Maximum 55 15 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 105 °C/W. Document Number: 73463 S-81449-Rev. B, 23-Jun-08 www.vishay.com 1 Si5938DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 17.4 mV/°C - 2.6 0.4 1.0 V ± 100 ns VDS = 20 V, VGS = 0 V -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = 4.5 V - 20 µA A VGS = 4.5 V, ID = 4.4 A 0.032 0.039 VGS = 2.5 V, ID = 4.1 A 0.037 0.045 VGS = 1.8 V, ID = 1.8 A 0.0455 0.055 VDS = 10 V, ID = 4.4 A 22 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 520 VDS = 10 V, VGS = 0 V, f = 1 MHz 60 VDS = 10 V, VGS = 8 V, ID = 4.4 A td(off) 10.5 16 6 9 VDS = 10 V, VGS = 4.5 V, ID = 4.4 A 0.91 f = 1 MHz 1.9 20 30 VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 4.5 V, Rg = 1 Ω 65 100 40 60 Ω tf 10 15 td(on) 5 10 12 20 tr td(off) nC 0.7 td(on) tr pF 100 VDD = 10 V, RL = 2.8 Ω ID ≅ 3.6 A, VGEN = 8 V, Rg = 1 Ω tf 26 40 8 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 14.8 20 IS = 1.2 A, VGS = 0 V 0.8 1.2 A V Body Diode Reverse Recovery Time trr 45 70 ns Body Diode Reverse Recovery Charge Qrr 21 32 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 1.2 A, dI/dt = 100 A/µs, TJ = 25 °C 29 16 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73463 S-81449-Rev. B, 23-Jun-08 Si5938DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 20 VGS = 3 V thru 5 V 8 VGS = 2.5 V I D - Drain Current (A) I D - Drain Current (A) 16 VGS = 2 V 12 VGS = 1.5 V 8 6 4 TC = 125 °C 2 4 25 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.08 1.5 800 VGS = 4.5 V 0.07 0.06 600 C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) - 55 °C 0 0.0 0.05 VGS = 2.5 V 0.04 0.03 VGS = 1.8 V 0.02 Ciss 400 200 Coss 0.01 0.00 Crss 0 0 4 8 12 16 20 0 4 I D - Drain Current (A) 8 16 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 8 ID = 4.4 A 1.4 6 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 VDS = 10 V 4 VDS = 16 V 2 VGS = 4.5 V ID = 4.4 A 1.2 1.0 0.8 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73463 S-81449-Rev. B, 23-Jun-08 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si5938DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.08 R DS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C 1 0.0 ID = 4.4 A 0.07 0.06 125 °C 0.05 25 °C 0.04 0.03 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 40 0.8 Power (W) VGS(th) (V) 30 ID = 250 µA 0.7 0.6 0.5 20 0.4 10 0.3 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 600 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* IDM limited ID - Drain Current (A) I limited 10 D(on) 100 µs 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25 °C Single Pulse 10 s DC BVDSS limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73463 S-81449-Rev. B, 23-Jun-08 Si5938DU Vishay Siliconix 15 10 12 8 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 9 Package Limited 6 3 6 4 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73463 S-81449-Rev. B, 23-Jun-08 www.vishay.com 5 Si5938DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 87 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73463. www.vishay.com 6 Document Number: 73463 S-81449-Rev. B, 23-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1