Si5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = - 4.5 V 6 0.100 at VGS = - 2.5 V 6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 5.5 nC SCHOTTKY PRODUCT SUMMARY VKA (V) VF (V) Diode Forward Voltage IF (A)a 20 0.375 at 1 A 2 APPLICATIONS PowerPAK® ChipFET ® Dual JA A Lot Traceability and Date Code 3 K K D A Part # Code G G D 6 S 4 S K 7 3. 0 m m XXX 2 A 8 • Charging Switch for Portable Devices - With Integrated Low VF Trench Schottky Diode Marking Code 1 D mm 1.8 5 Bottom View P-Channel MOSFET Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) IDM TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 ID IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD PD TJ, Tstg Limit - 20 20 ± 12 6a 6a - 5b, c - 4b, c - 20 - 6a 1.9b, c 2 7 10.4 6.7 2.3b, c 1.5b, c 7.8 5 2.1b, c 1.3b, c - 55 to 150 260 Unit V A W W °C www.vishay.com 1 Si5857DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t≤5s Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) t≤5s b, g Maximum Junction-to-Case (Drain) (Schottky) Symbol Typical Maximum RthJA 43 55 RthJC 9.5 12 RthJA 49 61 RthJC 13 16 Unit °C/W Notes: a. Package limited. b. Surface Mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 105 °C/W. g. Maximum under Steady State conditions for Schottky is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2.6 - 0.6 - 20 µA A VGS = - 4.5 V, ID = - 3.6 A 0.048 0.058 VGS = - 2.5 V, ID = - 1 A 0.081 0.100 VDS = - 10 V, ID = - 3.6 A 10 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 480 VDS = - 10 V, VGS = 0 V, f = 1 MHz 90 VDS = - 10 V, VGS = - 10 V, ID = - 5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A td(off) 11 17 5.5 8.5 1.2 f = 1 MHz VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 9 11 20 42 65 33 50 tf 50 75 td(on) 5 10 15 25 25 40 10 20 tr td(off) tf nC 1.8 td(on) tr pF 125 VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω ns Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 Si5857DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C -6 - 20 IS = - 4 A, VGS = 0 V IF = - 4 A dI/dt = 100 A/µs TJ = 25 °C A - 0.9 - 1.2 V 25 50 ns 10 20 nC 9 ns 16 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions Typ. Max. IF = 1 A Min. 0.34 0.375 IF = 1 A, TJ = 125 °C 0.255 0.290 VR = 20 V 0.05 0.500 VR = 20 V, TJ = 85 °C 2 20 VR = 20 V, TJ = 125 °C 10 100 VR = 10 V 90 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 www.vishay.com 3 Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 20 VGS = 5 V VGS = 3.5 V I D - Drain Current (A) VGS = 3 V VGS = 4 V 4 I D - Drain Current (A) VGS = 4.5 V 16 12 VGS = 2.5 V 8 VGS = 2 V 3 2 TC = 125 °C TC = 25 °C 1 4 VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 800 0.20 VGS = 2.5 V 0.16 600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 700 0.12 Ciss 500 400 300 200 0.08 VGS = 4.5 V Coss 100 Crss 0 0.04 0 4 8 12 16 0 20 2 4 6 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.6 10 VGS = 4.5 V ID = 3.6 A ID = 5.1 A 1.4 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V 6 VDS = 16 V 4 1.2 1.0 0.8 2 0 0 2 4 6 8 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 10 12 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.16 R DS(on) - Drain-to-Source On-Resistance (Ω) 20 I S - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.0 0.2 0.4 0.6 0.8 1.0 ID = 3.6 A 0.14 0.12 0.10 TA = 125 °C 0.08 0.06 TA = 25 °C 0.04 2.0 1.2 2.5 VSD - Source-to-Drain Voltage (V) 4.0 4.5 5.0 On-Resistance vs. Gate-to-Source Voltage 30 1.3 1.2 25 ID = 250 µA 1.1 20 Power (W) VGS(th) (V) 3.5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 1.0 15 0.9 10 0.8 0.7 - 50 3.0 5 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 TJ - Temperature ( °C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 IDM limited Limited by RDS(on)* I D - Drain Current (A) 10 ID(on) limited 100 µs 1 ms 1 10 ms 100 ms 1s 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 1 BVDSS limited 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 www.vishay.com 5 Si5857DU Vishay Siliconix 12 12 10 10 Power Dissipation (W) ID - Drain Current (A) MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 Package Limited 6 4 2 8 6 4 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 Si5857DU Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 87 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 Single Pulse 0.01 10-4 0.02 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 www.vishay.com 7 Si5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 20 V 0.1 0.01 TJ = 150 °C TJ = 25 °C 1 10 V 0.001 0.0001 - 50 0.1 - 25 0 25 50 75 100 125 150 0 TJ - Junction Temperature (°C) 0.1 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop CT - Junction Capacitance (pF) 600 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance www.vishay.com 8 Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 Si5857DU Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73696. Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 www.vishay.com 9 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000