SiA414DJ Datasheet

SiA414DJ
Vishay Siliconix
N-Channel 8-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.011 at VGS = 4.5 V
12
0.013 at VGS = 2.5 V
12
0.016 at VGS = 1.8 V
12
0.022 at VGS = 1.5 V
12
0.041 at VGS = 1.2 V
12
VDS (V)
8
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
19 nC
APPLICATIONS
• Load Switch for Portable Applications
D
PowerPAK SC-70-6L-Single
Marking Code
1
D
ACX
2
Part # code
D
XXX
6
D
5
S
D
2.05 mm
S
G
Lot Traceability
and Date code
3
G
Ordering Information:
SiA414DJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
SiA414DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
2.05 mm
4
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
Limit
8
±5
12a
12a
12a, b, c
11.6b, c
40
12a
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
ID
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)
IS
PD
TJ, Tstg
d, e
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 73954
S12-1141-Rev. C, 21-May-12
For more information please contact: [email protected]
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
RDS(on)
a
gfs
Forward Transconductance
V
9
mV/°C
-3
0.35
0.8
V
± 100
nA
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 4.5 V
20
µA
A
VGS 4.5 V, ID = 9.7 A
0.009
0.011
VGS 2.5 V, ID = 9 A
0.011
0.013
VGS 1.8 V, ID = 8.1 A
0.013
0.016
VGS 1.5 V, ID = 4.5 A
0.016
0.022
VGS 1.2 V, ID = 2.4 A
0.027
0.041
VDS = 4 V, ID = 9.7 A
50

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1800
VDS = 4 V, VGS = 0 V, f = 1 MHz
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
21
32
19
29
VDS = 4 V, VGS = 4.5 V, ID = 10 A
2.5
f = 1 MHz
2.5
nC
6.5
12
VDD = 4 V, RL = 0.4 
ID  10 A, VGEN = 4.5 V, Rg = 1 
td(on)
Turn-on Delay Time
pF
450
VDS = 4 V, VGS = 5 V, ID = 10 A
td(on)
Turn-on Delay Time
650
VDD = 4 V, RL = 0.4 
ID  10 A, VGEN = 5 V, Rg = 1 

20
10
15
65
100
20
30
10
15
10
15
35
55
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
12
40
IS = 10 A, VGS 0 V
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
40
80
ns
Body Diode Reverse Recovery Charge
Qrr
20
40
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
12
28
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact: [email protected]
Document Number: 73954
S12-1141-Rev. C, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
40
VGS = 5 V thru 2 V
8
I D - Drain Current (A)
I D - Drain Current (A)
32
1.5 V
24
16
6
TC = 25 °C
4
TC = 125 °C
2
8
1V
0
0.0
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
TC = - 55 °C
0
0.0
2.0
0.3
0.6
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.06
2500
0.05
2000
VGS = 1.5 V
Ciss
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
VGS = 1.2 V
0.04
0.03
VGS = 1.8 V
0.02
1500
1000
Coss
500
0.01
Crss
VGS = 2.5 V
VGS = 4.5 V
0
0
0
8
16
24
ID - Drain Current (A)
32
40
0
2
4
6
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
1.5
R DS(on) - On-Resistance (Normalized)
ID = 10 A
VGS - Gate-to-Source Voltage (V)
8
4
VDS = 4 V
3
VDS = 6.4 V
2
1
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73954
S12-1141-Rev. C, 21-May-12
18
21
ID = 9.7 A
1.4
VGS = 1.8 V, 2.5 V, 4.5 V
1.3
1.2
VGS = 1.5 V
1.1
1.0
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For more information please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.040
TJ = 150 °C
TJ = 25 °C
10
1
0.0
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 9.7 A
0.032
0.024
0.016
125 °C
0.008
25 °C
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
1.2
0
Source-Drain Diode Forward Voltage
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
On-Resistance vs. Gate-to-Source Voltage
30
0.8
25
0.7
ID = 250 µA
20
Power (W)
V GS(th) (V)
0.6
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
150
Threshold Voltage
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by R DS(on)*
I D - Drain Current (A)
100 µs
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
* VGS
1
10
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For more information please contact: [email protected]
Document Number: 73954
S12-1141-Rev. C, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
20
35
Power Dissipation (W)
I D - Drain Current (A)
30
25
20
Package Limited
15
10
15
10
5
5
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73954
S12-1141-Rev. C, 21-May-12
For more information please contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA414DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73954.
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For more information please contact: [email protected]
Document Number: 73954
S12-1141-Rev. C, 21-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000