SiE830DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Drain Top Case Source RT1 1.2715 541.9300 u 420.8703 m RT2 7.4755 23.8824 m 2.9560 RT3 10.4814 959.1091 m 18.8355 m RT4 48.7717 216.4667 m 4.2819 m Thermal Capacitance (Joules/°C) Junction to Ambient Case Drain Top Case Source CT1 2.1640 m 45.8985 m 1.1574 m CT2 230.0674 m 26.2866 m 17.2324 m CT3 42.6031 m 18.2078 m 853.1085 m CT4 1.2991 2.5292 m 4.8476 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 69508 Revision: 14-Aug-07 www.vishay.com 1 SiE830DF_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Case Drain Top Case Source RF1 6.0874 310.0466 m 410.9662 m RF2 7.6744 555.7670 u 1.2834 RF3 7.6389 52.0767 m 726.9760 m RF4 46.5993 837.3209 m 978.6087 m Junction to Ambient CF1 CF2 Thermal Capacitance (Joules/°C) Case Drain Top Case Source 11.6397 m 2.0570 m 952.9749 u 60.3507 m 396.0260 u 13.6830 m CF3 17.0829 m 16.5376 m 1.2512 m CF4 1.3018 85.3684 u 11.0678 m Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 69508 Revision: 14-Aug-07 SiE830DF_RC Vishay Siliconix Document Number: 69508 Revision: 14-Aug-07 www.vishay.com 3 SiE830DF_RC Vishay Siliconix www.vishay.com 4 Document Number: 69508 Revision: 14-Aug-07