SIE830DF-T1-E3

SiE830DF
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
Definition
• Extremely Low Qgd WFET® Technology for
Low Switching Losses
• Ultra Low Thermal Resistance Using TopExposed PolarPAK® Package for DoubleSided Cooling
• Leadframe-Based New Encapsulated Package
- Die Not Exposed
- Same Layout Regardless of Die Size
• Low Qgd/Qgs Ratio Helps Prevent Shoot-Through
• 100 % Rg and UIS Tested
• Compliant to RoHS directive 2002/95/EC
ID (A)a
RDS(on) (Ω)
Silicon
Limit
0.0042 at VGS = 10 V
120
50
0.0048 at VGS = 4.5 V
112
50
VDS (V)
30
Package
Qg (Typ.)
Limit
33 nC
Package Drawing
www.vishay.com/doc?73398
PolarPAK
10
D
9
G
8
S
7
S
6
D
6
7
8
9
10
APPLICATIONS
D
D
S
G
D
• VRM
• Point-of-Load
• Synchronous Rectification
D
G
D
1
G
2
S
3
S
4
D
5
5
4
3
2
1
S
Top View
Bottom View
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE830DF-T1-E3 (Lead (Pb)-free)
SiE830DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
For Related Documents
www.vishay.com/ppg?74422
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
ID
IDM
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
IAS
EAS
Limit
30
± 12
120 (Silicon Limit)
50a (Package Limit)
50a
27b, c
21.6b, c
80
50a
4.3b, c
30
45
104
66
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
A
mJ
TC = 25 °C
TC = 70 °C
PD
Maximum Power Dissipation
W
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
°C
Soldering Recommendations (Peak Temperature)d, e
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
www.vishay.com
1
SiE830DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 s
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain Top)a
Steady State
Maximum Junction-to-Case (Source)a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
Symbol
RthJA
RthJC (Drain)
RthJC (Source)
Typical
20
1
2.8
Maximum
24
1.2
3.4
Unit
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VGS = 0 V, ID = 250 µA
30
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
a
ID(on)
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
a
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Rg
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Drain-Source Body Diode Characteristics
IS
Continuous Source-Drain Diode Current
ISM
Pulse Diode Forward Currenta
VSD
Body Diode Voltage
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
ta
Reverse Recovery Fall Time
tb
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 12 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 16 A
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 20 A
VDS = 15 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
0.6
V
30
- 4.8
1.4
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
2
± 100
1
10
25
V
nA
µA
A
0.0035
0.0039
95
5500
650
220
75
33
11
5.1
1.0
35
105
70
95
15
40
45
10
TC = 25 °C
IS = 10 A
mV/°C
0.8
40
40
22
18
0.0042
0.0048
Ω
S
pF
115
50
1.5
55
160
105
145
25
60
70
15
50
80
1.2
60
60
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
20
VGS = 10 V thru 3 V
I D - Drain Current (A)
I D - Drain Current (A)
16
60
40
12
8
TC = 125 °C
20
4
TC = 25 °C
VGS = 2 V
0
0.0
0.5
1.0
TC = - 55 °C
1.5
0
1.0
2.0
1.4
Output Characteristics
2.6
3.0
Transfer Characteristics
0.0044
7200
0.0042
6000
Ciss
C - Capacitance (pF)
VGS = 4.5 V
0.0040
0.0038
0.0036
VGS = 10 V
0.0034
4800
3600
2400
Coss
1200
0.0032
Crss
0.0030
0
0
20
40
60
0
80
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
10
1.8
ID = 16 A
ID = 20 A
8
1.6
VDS = 15 V
R DS(on) - On-Resistance
(Normalized)
VG S - Gate-to-Source Voltage (V)
2.2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
R DS(on) - On-Resistance ( )
1.8
VDS = 32 V
6
4
2
VGS = 4.5 V, 10 V
1.4
1.2
1.0
0.8
0
0
20
40
60
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
80
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
R DS(on) - Drain-to-Source On-Resistance ( )
I S - Source Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
ID = 16 A
0.009
0.008
0.007
TA = 125 °C
0.006
0.005
TA = 25 °C
0.004
0.003
0.002
0
2
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
50
1.8
1.6
40
ID = 250 µA
Power (W)
1.4
VGS(th) (V)
4
1.2
30
20
1.0
10
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited
by R DS(on)*
1 ms
I D - Drain Current (A)
10
10 ms
100 ms
1
1s
TA = 25 °C
Single Pulse
0.1
10 s
DC
BVDSS
Limited
0.01
0.01
* VGS
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
SiE830DF
Vishay Siliconix
140
120
120
100
100
Power Dissipation (W)
I D - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
60
40
80
60
40
Package Limited
20
20
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
www.vishay.com
5
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Source
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74422.
www.vishay.com
6
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
Package Information
Vishay Siliconix
PolarPAK
(Option S)
M4
Product datasheet/information page contain
links to applicable package drawing.
10
9
8
7
6
D
G
S
S
D
M3
VIEW A
E
E1
T2
T1
T4
T3
Q
T5
M4
M3
T3
M2
T5
Q
M1
D
G
S
S
D
1
2
3
4
5
c
A
(Top View)
Q
Q
H1
6
7
8
9
10
D
S
S
G
D
b1
b3
H4
H3 b2
H2
b1
H1
Z
K4
P1
K1
D1
D
A1
K4
P1
b4
b4
DETAIL Z
b5
D
5
b5
S
S
4
3
b5
G
D
2
1
VIEW A
(Bottom View)
Document Number: 73398
10-Jun-05
www.vishay.com
1
Package Information
Vishay Siliconix
MILLIMETERS
Dim
A
A1
b1
b2
b3
b4
b5
c
D
D1
E
E1
H1
H2
H3
H4
K1
K4
M1
M2
M3
M4
P1
T1
T2
T3
T4
T5
Q
INCHES
Min
Nom
Max
Min
Nom
Max
0.75
0.80
0.85
0.030
0.031
0.033
0.00
−
0.05
0.000
−
0.002
0.48
0.58
0.68
0.019
0.023
0.027
0.41
0.51
0.61
0.016
0.020
0.024
2.19
2.29
2.39
0.086
0.090
0.094
0.89
1.04
1.19
0.035
0.041
0.047
0.23
0.33
0.43
0.009
0.013
0.017
0.20
0.25
0.30
0.008
0.010
0.012
6.00
6.15
6.30
0.236
0.242
0.248
5.74
5.89
6.04
0.226
0.232
0.238
5.01
5.16
5.31
0.197
0.203
0.209
4.75
4.90
5.05
0.187
0.193
0.199
0.23
−
−
0.009
−
−
0.45
−
0.56
0.020
−
0.022
0.31
0.41
0.51
0.012
0.016
0.020
0.45
−
0.56
0.020
−
0.022
4.22
4.37
4.52
0.166
0.172
0.178
0.24
−
−
0.009
−
−
4.30
4.50
4.70
0.169
0.177
0.185
3.43
3.58
3.73
0.135
0.141
0.147
0.22
−
−
0.009
−
−
0.05
−
−
0.002
−
−
0.15
0.20
0.25
0.006
0.008
0.010
3.48
3.64
4.10
0.137
0.143
0.150
0.56
0.76
0.95
0.22
0.030
0.037
1.20
−
−
0.051
−
−
3.90
−
−
0.154
−
−
0
0.18
0.36
0.000
0.007
0.014
0_
10_
12_
0_
10_
12_
ECN: S−51049—Rev. B, 13-Jun-05
DWG: 5947
Note: Millimeters govern over inches
www.vishay.com
2
Document Number: 73398
10-Jun-05
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PolarPAK® Option L and S
7.300
(0.287)
0.510
(0.020)
0.510
(0.020)
0.410
(0.016)
0.955
(0.038)
0.955
(0.038)
4.520
(0.178)
6.310
(0.248)
0.895
(0.035)
+
0.895
(0.035)
2.290
(0.090)
0.580
(0.023)
0.580
(0.023)
0.510
(0.020)
APPLICATION NOTE
Recommended Minimum for PolarPAK Option L and S
Dimensions in mm/(Inches)
No External Traces within Broken Lines
Dot indicates Gate Pin (Part Marking)
Return to Index
www.vishay.com
6
Document Number: 73491
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000