Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET http://onsemi.com –12V, –9.5A, 16mΩ, Single ECH8 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --12 V ±10 V Allowable Power Dissipation ID IDP PD 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --9.5 A --40 A When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8309-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 JL 5 Lot No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7 ECH8309 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±8V, VDS=0V --12 VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A --0.4 9.6 ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V typ Unit max V --10 μA ±10 μA --1.3 16 V S 12 16 mΩ 18 26 mΩ 30 53 mΩ 1780 pF 540 pF Crss 390 pF Turn-ON Delay Time td(on) 22 ns Rise Time tr 110 ns Turn-OFF Delay Time td(off) 157 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--9.5A 123 ns 18 nC 2.8 nC 4.9 IS=--9.5A, VGS=0V --0.8 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --4.5A RL=1.3Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8309 P.G 50Ω S Ordering Information Device ECH8309-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1418-2/7 ECH8309 ID -- VGS --10 --1.8 V VDS= --6V --9 --8 --3 --1.5V --2 --6 --5 --4 --3 --1 VGS= --1.2V 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 0 --0.5 --1.0 --1.5 --2.5 --2.0 Gate-to-Source Voltage, VGS -- V IT13985 RDS(on) -- VGS 50 --0.9 25 °C --2 --1 --25° C --4 --7 Ta=7 5°C Drain Current, ID -- A --5 --4.5 --2.5 V V Drain Current, ID -- A --6 ID -- VDS --8.0V --6.0V --7 IT13986 RDS(on) -- Ta 45 45 ID= --1.0A --2.0A 35 --4.5A 25 20 15 10 5 0 0 --1 --2 --3 --4 --5 --6 --7 5 3 | yfs | -- ID C °C -25 =a T C 75° 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 SW Time -- ID 2 3 10 5 --40 --20 0 20 40 60 80 100 120 140 160 IT14419 IS -- VSD VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.01 5 7 --10 IT13989 3 td(off) tf 100 7 5 tr 3 --0.4 --0.6 --0.8 --1.0 --1.2 IT13990 f=1MHz 3 Ciss, Coss, Crss -- pF 5 --0.2 Ciss, Coss, Crss -- VDS 5 7 2 0 Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V 1000 Switching Time, SW Time -- ns 15 3 2 Drain Current, ID -- A 2 Ciss 1000 7 Coss Crss 5 3 2 2 10 --0.01 20 --10 7 5 1.0 7 5 0.1 7 --0.01 --2.0A , I D= V 5 . 2 = -VGS .5A I = --4 --4.5V, D = V GS 2 25° 2 25 --1.0A Ambient Temperature, Ta -- °C 2 3 30 IT14418 VDS= --6V 10 7 5 = 8V, I D = --1. VGS 0 --60 --8 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 35 5°C 25°C --25° C 30 40 Ta= 7 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C td(on) 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 5 7 --10 2 IT13991 100 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT13992 No. A1418-3/7 ECH8309 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --9.5A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 8 6 12 10 14 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 16 18 IT14420 --10 7 5 3 2 ASO IDP= --40A ID= --9.5A DC 10 0m s op era tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 1m s 10 ms Operation in this area is limited by RDS(on). n( Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14421 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14422 No. A1418-4/7 ECH8309 Embossed Taping Specification ECH8309-TL-H No. A1418-5/7 ECH8309 Outline Drawing ECH8309-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1418-6/7 ECH8309 Note on usage : Since the ECH8309 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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