ECH8672-TL-H - ON Semiconductor

Ordering number : ENA1465A
ECH8672
P-Channel Power MOSFET
http://onsemi.com
–20V, –3.5A, 85mΩ, Dual ECH8
Features
•
•
•
1.8V drive
Composite type, facilitating high-density mounting
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
PD
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
--20
V
±10
V
--3.5
A
--30
A
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
1.3
W
When mounted on ceramic substrate (1200mm2×0.8mm)
1.5
W
150
°C
--55 to +150
°C
PW≤10μs, duty cycle≤1%
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-001
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8672-TL-H
Top View
Packing Type : TL
0.25
2.9
Marking
0.15
8
TT
5
LOT No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/42809PE MSIM TC-00001909 No. A1465-1/7
ECH8672
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
ID=--1mA, VGS=0V
VDS=--20V, VGS=0V
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--1.5A
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--1.5A, VGS=--4.5V
ID=--1A, VGS=--2.5V
ID=--0.5A, VGS=--1.8V
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Ratings
min
typ
Unit
max
--20
V
--0.4
2.1
--1
μA
±10
μA
--1.3
3.6
V
S
65
85
mΩ
98
137
mΩ
155
235
mΩ
320
pF
66
pF
Crss
50
pF
Turn-ON Delay Time
td(on)
7.1
ns
Rise Time
tr
td(off)
21
ns
37
ns
Turn-OFF Delay Time
Fall Time
VDS=--10V, f=1MHz
See specified Test Circuit.
tf
Qg
Total Gate Charge
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, VGS=--4.5V, ID=--3.5A
IS=--3.5A, VGS=0V
32
ns
4.0
nC
0.6
nC
1.1
nC
--0.84
--1.2
V
Switching Time Test Circuit
0V
--4.5V
VDD= --10V
VIN
ID= --1.5A
RL=6.67Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8672
P.G
50Ω
S
Ordering Information
Device
ECH8672-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1465-2/7
ECH8672
ID -- VDS
--2.0
.8 V
--5.0
--4.5
--1
--8V
--3.5
V
--2.5
V
--2.5
--10V
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
Drain-to-Source Voltage, VDS -- V
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --0.5A
--1A
120
--1.5A
90
60
30
--1
--2
--3
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
C
25
°C
--1.0A
, I D=
V
5
.
2
= -VGS
.5A
I = --1
--4.5V, D
=
V GS
120
100
80
60
40
20
--20
0
20
40
60
80
100
120
140
160
IT14658
IS -- VSD
7
5
VGS=0V
2
3
2
=
Ta
5
--2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
140
3
°C
°C
75
1.0
°C
25
7
5
3
--1.0
7
5
3
2
--0.1
7
5
--0.5
--0.6
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
3
5
--0.01
--0.3
7
Ciss, Coss, Crss -- pF
td(off)
5
3
tf
2
tr
10
td(on)
7
--0.9
--1.0
--1.1
IT14538
f=1MHz
5
Ciss
3
7
--0.8
Ciss, Coss, Crss -- VDS
7
2
100
--0.7
Diode Forward Voltage, VSD -- V
VDD= --10V
VGS= --4.5V
3
--0.4
IT14537
SW Time -- ID
5
Switching Time, SW Time -- ns
=
VGS
= --0
V, I D
--1.8
Ambient Temperature, Ta -- °C
5
0.1
--0.01
160
0
--60 --40
--8
VDS= --10V
7
.5A
180
IT14657
| yfs | -- ID
10
200
25°
C
--2
5°C
0
220
Ta=
75°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
180
IT14534
RDS(on) -- Ta
240
210
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2
Gate-to-Source Voltage, VGS -- V
Ta=25°C
150
0
IT14533
RDS(on) -- VGS
240
--1.5
--0.5
VGS= --1.2V
--0.1
--2.0
--1.0
--0.5
0
--2.5
--25
°
--1.5V
--3.0
75°
C
--1.0
--3.5
Ta=
Drain Current, ID -- A
V
--1.5
0
ID -- VGS
VDS= --10V
--4.0
--4.
5
Drain Current, ID -- A
--3.0
2
100
Coss
Crss
7
5
5
3
3
2
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
Drain Current, ID -- A
2
3
5 7 --10
IT14539
2
0
--2
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT14540
No. A1465-3/7
ECH8672
VGS -- Qg
5
VDS= --10V
ID= --3.5A
--4.0
3
2
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--0.5
3
2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Total Gate Charge, Qg -- nC
PD -- Ta
1.8
4.0
4.5
IT14659
10
0μ
1m s
s
10
10 ms
0m
s
ID= --3.5A
DC
op
era
tio
n(
Ta
=
3
2
--0.1
7
5
0
PW≤10μs
--1.0
7
5
--1.0
0
Allowable Power Dissipation, PD -- W
--10
7
5
3
2
ASO
IDP= --30A
25
°C
)
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2
3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT14660
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.3
1.2
To
t
al
1.0
1u
0.8
di
ss
nit
ip
ati
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14661
No. A1465-4/7
ECH8672
Embossed Taping Specification
ECH8672-TL-H
No. A1465-5/7
ECH8672
Outline Drawing
ECH8672-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1465-6/7
ECH8672
Note on usage : Since the ECH8672 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1465-7/7