Ordering number : ENA1420A ECH8102 Bipolar Transistor http://onsemi.com –30V, –12A, Low VCE(sat), PNP Single ECH8 Applications • High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers Features • • • • • High current capacitance Adoption of FBET, MBIT process • High speed switching Low collector-to-emitter saturation voltage • Halogen free compliance High allowable power dissipation IECO is guaranteed for preventing reverse flow from the collector to the emitter Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Conditions Ratings Unit VCBO VCES -30 V -30 V VCEO VEBO -30 V -6 V IC ICP -12 A -24 A Collector Dissipation IB PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (900mm2×0.8mm) -1.2 A 1.6 W 150 °C -55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-005 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel Top View ECH8102-TL-H 0.25 2.9 0.15 8 Packing Type : TL 5 Marking GB 2.3 2.8 0 to 0.02 Lot No. 4 1 0.65 0.3 Electrical Connection 1 : Emitter 2 : Emitter 3 : Emitter 4 : Base 5 : Collector 6 : Collector 7 : Collector 8 : Collector 0.07 0.9 0.25 TL Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 September, 2013 53012 TKIM/D0209EA TKIM TC-00002127 No. A1420-1/7 ECH8102 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO IECO Emitter Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Conditions Ratings min typ Unit max VCB= -30V, IE=0A VEB= -4V, IC=0A -0.1 μA -0.1 μA -1 μA hFE1 VEC= -4.5V, IC=0A VCE= -2V, IC= -500mA 200 hFE2 VCE= -2V, IC= -4A 150 hFE3 VCE= -2V, IC= -10A 100 fT Cob VCE= -10V, IC= -500mA 140 120 VCE(sat)1 VCB= -10V, f=1MHz IC= -6A, IB= -300mA VCE(sat)2 IC= -2A, IB= -40mA VBE(sat) V(BR)CBO IC= -2A, IB= -40mA IC= -10μA, IE=0A -30 V V(BR)CES IC= -100μA, RBE=0Ω -30 V V(BR)CEO IC= -1mA, RBE=∞ -30 V V(BR)EBO ton IE= -10μA, IC=0A -6 tstg tf See specified Test Circuit. 560 -80 MHz pF -135 mV -50 -85 mV -0.85 -1.2 V V 91 ns 125 ns 17 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT VOUT IB2 VR 50Ω RB RL + + 100μF 470μF VBE=5V VCC= --12V IC= --50IB1=25IB2= --5A Ordering Information Device ECH8102-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1420-2/7 ECH8102 IC -- VCE --5 --6 0m --25mA --20mA --15mA A --70m --4 --10mA --3 --2 --10 --5mA --8 --6 --4 --25°C --6 --30mA VCE= --2V Ta=75° C 25°C --7 --40mA --35mA --45mA Collector Current, IC -- A --8 IC -- VBE --12 --100mA --90mA Collector Current, IC -- A --9 --50mA A --80mA --10 --0.6 --0.8 --2 --1 0 IB=0mA 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Collector-to-Emitter Voltage, VCE -- V hFE -- IC 1000 DC Current Gain, hFE --25°C 100 7 5 2 --25°C 100 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A f T -- IC 5 VCE= --2V 25°C 2 2 3 10 --0.01 5 7 --10 2 3 IT14434 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A Cob -- VCB 7 5 7 --10 2 3 IT14435 f=1MHz 5 Output Capacitance, Cob -- pF 3 2 100 7 5 3 2 3 2 100 7 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 7 --10 IT14436 IC / IB=10 --100 °C 25 3 C 5° 2 =7 Ta C 5° --2 --10 3 2 5°C Ta= --2 75°C 25°C --1.0 --0.01 2 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT14438 5 7 2 --10 VCE(sat) -- IC 3 5 IT14437 IC / IB=20 2 --100 7 °C 25 5 3 °C 75 C 5° --2 = Ta 2 --10 7 5 3 3 3 3 2 7 5 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 7 5 5 --1.0 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Gain-Bandwidth Product, f T -- MHz VCE= --10V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1.2 IT14433 Ta=75°C 3 3 10 --0.01 --1.0 hFE -- IC 5 25°C 2 --0.4 7 Ta=75°C 3 --0.2 Base-to-Emitter Voltage, VBE -- V VCE= --0.5V 5 0 IT14456 1000 7 DC Current Gain, hFE 0 --1.8 --2.0 5°C Ta= --2 75°C 25°C 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT14439 No. A1420-3/7 ECH8102 VCE(sat) -- IC Base-to-Emitter Saturation Voltage, VBE(sat) -- V --100 7 °C 75 C = 5° Ta --2 5 3 2 Ta= --25°C 75°C --10 25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A DC 3 2 op era tio n( --1.0 7 5 Ta = 25 °C ) 3 2 --0.1 7 5 3 2 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 75°C 5 25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT14441 PC -- Ta When mounted on ceramic substrate (900mm2×0.8mm) 1.6 s 1m Collector Current, IC -- A 50 0 10 μs 10 ms 0m s IC= --12A Ta= --25°C 7 1.8 ≤10μs s 0μ --10 7 5 --1.0 Collector Current, IC -- A 10 3 2 ASO ICP= --24A 2 2 --0.01 5 7 --10 2 3 IT14440 Collector Dissipation, PC -- W 5 --0.01 5 IC / IB=50 IC / IB=50 2 7 VBE(sat) -- IC 3 25 °C Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 5 IT14442 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14443 No. A1420-4/7 ECH8102 Embossed Taping Specification ECH8102-TL-H No. A1420-5/7 ECH8102 Outline Drawing ECH8102-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1420-6/7 ECH8102 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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