Ordering number : ENA1224A ECH8659 N-Channel Power MOSFET http://onsemi.com 30V, 7A, 24mΩ, Dual ECH8 Features • • • • 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 30 V ±20 V 7 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8659-TL-H Top View Packing Type : TL 0.25 2.9 8 TE 5 Lot No. TL 2.3 2.8 0 to 0.02 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 Marking 0.15 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/61808PA TIIM TC-00001318 No. A1224-1/7 ECH8659 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA 1.2 VDS=10V, ID=3.5A 2.2 RDS(on)1 ID=3.5A, VGS=10V 18 24 mΩ RDS(on)2 ID=2A, VGS=4.5V 29 41 mΩ RDS(on)3 ID=2A, VGS=4V 39 55 mΩ Input Capacitance Ciss 710 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 72 pF Turn-ON Delay Time td(on) 10 ns Rise Time tr 25 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD 30 See specified Test Circuit. VDS=15V, VGS=10V, ID=3.5A V 1 μA ±10 μA 2.6 3.7 43 ns 25 ns 11.8 nC 2.4 nC 2.0 IS=7A, VGS=0V V S 0.79 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=3.5A RL=4.3Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8659 P.G 50Ω S Ordering Information Device ECH8659-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1224-2/7 ECH8659 ID -- VDS ID -- VGS 14 V VDS=10V 13 3.5 12 11 VGS=3.0V 2 8 7 6 5 4 3 1 2 0 1 0 0.4 0.6 0.8 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ID=2A 3.5A 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° --2 = °C Ta 75 1.0 °C 25 7 5 3 2 0.1 7 0.01 50 3.0 3.5 4.0 4.5 5.0 IT13724 A I =2.0 4.0V, D = S VG 2.0A , I D= V 5 . 4 = VGS .5A , I D=3 10.0V = V GS 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT13726 IS -- VSD 3 2 3 2.5 Ambient Temperature, Ta -- °C 5 2 2.0 60 0 --60 16 VDS=10V 7 1.5 RDS(on) -- Ta IT13725 | yfs | -- ID 10 1.0 70 70 60 0.5 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 IT13723 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 25° C 0.2 Ta =7 5°C 0 25°C --25° C 3 9 --25 °C 4 10 Ta= 75°C Drain Current, ID -- A 5 16.0V 10.0V 8.0V Drain Current, ID -- A 6 6.0V 4.5V 4.0V 7 0.1 7 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.01 0.3 5 7 10 2 IT13727 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V SW Time -- ID 100 0.4 1.0 IT13728 Ciss, Coss, Crss -- VDS 2 f=1MHz td(off) 5 3 1000 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 7 tf 2 td(on) 10 tr 7 5 5 3 2 Coss 100 Crss 7 5 VDD=15V VGS=10V 3 2 0.1 Ciss 7 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 3 IT13729 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT13730 No. A1224-3/7 ECH8659 VGS -- Qg 10 VDS=15V ID=3.5A 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT13731 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 10 7 5 3 2 ASO IDP=40A 1m s ID=7A 10 0μ s 10 ms 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs 0m s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13732 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13733 No. A1224-4/7 ECH8659 Embossed Taping Specification ECH8659-TL-H No. A1224-5/7 ECH8659 Outline Drawing ECH8659-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1224-6/7 ECH8659 Note on usage : Since the ECH8659 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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