ECH8419 N-Channel Power MOSFET 35V, 9A

Ordering number : ENA1886A
ECH8419
N-Channel Power MOSFET
http://onsemi.com
35V, 9A, 17mΩ, Single ECH8
Features
•
•
•
•
ON-resistance RDS(on)1=13mΩ (typ.)
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
Unit
35
V
±20
V
9
A
PW≤10μs, duty cycle≤1%
40
A
When mounted on ceramic substrate (900mm2×0.8mm)
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8419-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
5
KZ
2.3
Lot No.
TL
4
1
0.65
Electrical Connection
0.3
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
8
7
6
5
1
2
3
4
60612 TKIM/20211PE TKIM TC-00002564 No. A1886-1/7
ECH8419
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
typ
Unit
max
ID=1mA, VGS=0V
VDS=35V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=5A
4.3
RDS(on)1
ID=5A, VGS=10V
13
17
mΩ
RDS(on)2
ID=2.5A, VGS=4.5V
21
30
mΩ
RDS(on)3
ID=2.5A, VGS=4V
27
38
mΩ
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
Ratings
min
V(BR)DSS
IDSS
Input Capacitance
Rise Time
Conditions
35
V
1.2
1
μA
±10
μA
2.6
V
S
960
pF
130
pF
Crss
80
pF
td(on)
tr
13
ns
26
ns
66
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=20V, VGS=10V, ID=9A
IS=9A, VGS=0V
31
ns
19
nC
3.9
nC
3.8
nC
0.85
1.2
V
Switching Time Test Circuit
10V
0V
VDD=20V
VIN
ID=5A
RL=4Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8419
P.G
50Ω
S
Ordering Information
Device
ECH8419-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1886-2/7
ECH8419
ID -- VDS
V
3.5V
5
4
3
8
6
4
2
VGS=3.0V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=2.5A
5A
40
30
20
10
0
0
2
4
6
8
10
12
14
Gate-to-Source Voltage, VGS -- V
2
C
5°
°C
75
Ta
7
5
3
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
SW Time -- ID
2
20
10
--40
--20
0
20
40
60
80
100
120
140
160
IT16145
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
0.01
0.2
5 7 10
2
IT15797
100
1.0
1.2
IT15798
f=1MHz
5
tf
2
td(on)
10
0.8
2
td(off)
3
0.6
Ciss, Coss, Crss -- VDS
3
VDD=20V
VGS=10V
7
0.4
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
=2.5A
4.0V, I D
V GS=
A
I =2.5
4.5V, D
=
S
VG
A
I =5.0
0.0V, D
1
=
V GS
30
3
2
Drain Current, ID -- A
tr
7
Ciss
1000
7
5
3
2
Coss
100
5
3
0.1
40
10
7
5
-2
=-
1.0
5
IT15794
3
2
C
25°
3
3
Ambient Temperature, Ta -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
2
50
0
--60
16
VDS=10V
7
4
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
IT16144
| yfs | -- ID
10
1
60
Ta=25°C
50
0
IT15793
RDS(on) -- VGS
60
0
1.0
--25°
C
0.2
25°
C
0.1
5°C
0
Ta=
7
0
2
25
°C
1
--25°
C
6
10
Ta=75
°C
7
VDS=10V
12
Drain Current, ID -- A
Drain Current, ID -- A
8
ID -- VGS
14
4.0
9
6.0V
4.5V
14.0V 10.0V
10
Crss
7
2
3
5
7
1.0
2
3
Drain Current, ID -- A
5
7
10
2
IT15892
5
0
5
10
15
20
25
30
Drain-to-Source Voltage, VDS -- V
35
IT15800
No. A1886-3/7
ECH8419
VGS -- Qg
10
9
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
VDS=20V
ID=9A
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
PD -- Ta
Allowable Power Dissipation, PD -- W
2.0
18
20
IT16146
10
7
5
3
2
ASO
IDP=40A (PW≤10μs)
ID=9A
DC
ms
10
0m
s
op
era
tio
1.0
7
5
3
2
0.1
7
5
3
2
10
10
0
1m μs
s
n(
Ta
=
25
°C
)
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16147
When mounted on ceramic substrate
(900mm2×0.8mm)
1.8
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16148
No. A1886-4/7
ECH8419
Embossed Taping Specification
ECH8419-TL-H
No. A1886-5/7
ECH8419
Outline Drawing
ECH8419-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1886-6/7
ECH8419
Note on usage : Since the ECH8419 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1886-7/7