Ordering number : ENA1886A ECH8419 N-Channel Power MOSFET http://onsemi.com 35V, 9A, 17mΩ, Single ECH8 Features • • • • ON-resistance RDS(on)1=13mΩ (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 35 V ±20 V 9 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-002 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8419-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 5 KZ 2.3 Lot No. TL 4 1 0.65 Electrical Connection 0.3 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 8 7 6 5 1 2 3 4 60612 TKIM/20211PE TKIM TC-00002564 No. A1886-1/7 ECH8419 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=35V, VGS=0V IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=5A 4.3 RDS(on)1 ID=5A, VGS=10V 13 17 mΩ RDS(on)2 ID=2.5A, VGS=4.5V 21 30 mΩ RDS(on)3 ID=2.5A, VGS=4V 27 38 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 35 V 1.2 1 μA ±10 μA 2.6 V S 960 pF 130 pF Crss 80 pF td(on) tr 13 ns 26 ns 66 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=20V, VGS=10V, ID=9A IS=9A, VGS=0V 31 ns 19 nC 3.9 nC 3.8 nC 0.85 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8419 P.G 50Ω S Ordering Information Device ECH8419-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1886-2/7 ECH8419 ID -- VDS V 3.5V 5 4 3 8 6 4 2 VGS=3.0V 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=2.5A 5A 40 30 20 10 0 0 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 2 C 5° °C 75 Ta 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 2 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT16145 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 7 10 2 IT15797 100 1.0 1.2 IT15798 f=1MHz 5 tf 2 td(on) 10 0.8 2 td(off) 3 0.6 Ciss, Coss, Crss -- VDS 3 VDD=20V VGS=10V 7 0.4 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns =2.5A 4.0V, I D V GS= A I =2.5 4.5V, D = S VG A I =5.0 0.0V, D 1 = V GS 30 3 2 Drain Current, ID -- A tr 7 Ciss 1000 7 5 3 2 Coss 100 5 3 0.1 40 10 7 5 -2 =- 1.0 5 IT15794 3 2 C 25° 3 3 Ambient Temperature, Ta -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 2 50 0 --60 16 VDS=10V 7 4 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta IT16144 | yfs | -- ID 10 1 60 Ta=25°C 50 0 IT15793 RDS(on) -- VGS 60 0 1.0 --25° C 0.2 25° C 0.1 5°C 0 Ta= 7 0 2 25 °C 1 --25° C 6 10 Ta=75 °C 7 VDS=10V 12 Drain Current, ID -- A Drain Current, ID -- A 8 ID -- VGS 14 4.0 9 6.0V 4.5V 14.0V 10.0V 10 Crss 7 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 10 2 IT15892 5 0 5 10 15 20 25 30 Drain-to-Source Voltage, VDS -- V 35 IT15800 No. A1886-3/7 ECH8419 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=20V ID=9A 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 2.0 18 20 IT16146 10 7 5 3 2 ASO IDP=40A (PW≤10μs) ID=9A DC ms 10 0m s op era tio 1.0 7 5 3 2 0.1 7 5 3 2 10 10 0 1m μs s n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16147 When mounted on ceramic substrate (900mm2×0.8mm) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16148 No. A1886-4/7 ECH8419 Embossed Taping Specification ECH8419-TL-H No. A1886-5/7 ECH8419 Outline Drawing ECH8419-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1886-6/7 ECH8419 Note on usage : Since the ECH8419 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1886-7/7