NSR0230M2T5G, NSVR0230M2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. Features Extremely Fast Switching Speed Extremely Low Forward Voltage 0.325 V (max) @ IF = 10 mA Low Reverse Current AEC Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements This is a Pb−Free Device* http://onsemi.com 30 V SCHOTTKY BARRIER DIODE SOD−723 CASE 509AA PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA Forward Current Surge Peak (60 Hz, 1 cycle) IFSM MARKING DIAGRAM 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Total Device Dissipation FR−5 Board, (Note 1) TA = 25C Derate above 25C 2 ANODE A 1.0 ESD Rating: Class 3B per Human Body Model Class C per Machine Model Characteristic 1 CATHODE 7C MG G 2 7C = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Symbol Max Unit 167 2.0 mW mW/C PD Device NSR0230M2T5G Thermal Resistance, Junction−to−Ambient RqJA 600 C/W Junction and Storage Temperature Range TJ, Tstg −55 to +125 C 1. FR−5 Minimum Pad. Package Shipping† SOD−723 2 mm Pitch (Pb−Free) 8,000/Tape & Reel NSVR0230M2T5G SOD−723 2 mm Pitch (Pb−Free) 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 3 1 Publication Order Number: NSR0230/D NSR0230M2T5G, NSVR0230M2T5G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 10 mA) (IF = 200 mA) VF 100m IR, REVERSE CURRENT (A) TA = 125C TA = 75C 10m 1m 100m TA = 25C 10m Max − − − − 10 100 − − − − 0.325 0.500 1m Unit mA Vdc 0 0.1 0.2 0.3 0.4 0.5 TA = 125C 100m TA = 75C 10m TA = 25C 1m 100n TA = −25C 1n 0.6 TA = −25C 10n 0 5 10 15 Figure 1. Forward Characteristics 20 16 14 12 10 8 6 4 2 0 25 Figure 2. Reverse Characteristics 18 0 20 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (V) CT, TOATAL CAPACITANCE (pF) IF, FORWARD CURRENT (A) Typ 10m 1 1m Min 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Total Capacitance http://onsemi.com 2 25 30 30 NSR0230M2T5G, NSVR0230M2T5G PACKAGE DIMENSIONS SOD−723 CASE 509AA−01 ISSUE O D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches SOD−723 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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