NTST30100S D

NTST30100SG,
NTSB30100S-1G
Very Low Forward Voltage
Trench-based Schottky
Rectifier
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Exceptionally Low VF = 0.39 V at IF = 5 A
1
2, 4
Features
3
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
These are Pb−Free Devices
4
TO−220
CASE 221A
STYLE 6
Typical Applications
• Switching Power Supplies including Notebook/Netbook Adapters,
•
•
•
•
MARKING
DIAGRAMS
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing Diodes
Reverse Battery Protection
Instrumentation
1
2
AYWW
TS30100SG
AKA
3
4
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
TS30100SG
AKA
Mechanical Characteristics
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
Weight (Approximately): 1.9 Grams
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
12
3
A
Y
WW
G
AKA
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Package
Shipping†
NTST30100SG
TO−220
(Pb−Free)
50 Units/Rail
NTSB30100S−1G
TO−262
(Pb−Free)
50 Units/Rail
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 4
1
Publication Order Number:
NTST30100S/D
NTST30100SG, NTSB30100S−1G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR, TC = 105°C)
IF(AV)
30
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 95°C)
IFRM
60
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
250
A
Operating Junction Temperature
TJ
−40 to +150
°C
Storage Temperature
Tstg
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
RqJC
RqJA
2.0
70
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 5 A, TJ = 25°C)
(IF = 10 A, TJ = 25°C)
(IF = 30 A, TJ = 25°C)
Typ
Max
0.47
0.55
0.84
−
−
0.95
0.39
0.51
0.7
−
−
0.78
vF
(IF = 5 A, TJ = 125°C)
(IF = 10 A, TJ = 125°C)
(IF = 30 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(VR = 70 V, TJ = 125°C)
V
IR
mA
mA
27
11
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
Unit
70
23
1000
45
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
NTST30100SG, NTSB30100S−1G
TYPICAL CHARACTERISTICS
1000
IR, INSTANTANEOUS REVERSE
CURRENT (mA)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 25°C
1
0.1
0.0
TA = 125°C
0.2
0.4
0.6
0.8
1.0
1.2
TA = 125°C
1
0.1
TA = 25°C
0.01
30
40
50
60
70
80
90
100
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Typical Reverse Characteristics
1000
IF(AV), AVERAGE FORWARD CURRENT (A)
60
TJ = 25°C
55
RqJC = 2.0°C/W
dc
50
45
40
35
30
25
SQUARE WAVE
20
15
10
5
0
1
10
VR, REVERSE VOLTAGE (V)
100
0
Figure 3. Typical Junction Capacitance
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
45
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
C, JUNCTION CAPACITANCE (pF)
10
0.001
20
10000
100
0.1
TA = 150°C
100
IPK/IAV = 10
40
35
TA = 150°C
IPK/IAV = 20
30
25
IPK/IAV = 5
SQUARE
WAVE
20
15
dc
10
5
0
0
5
10
15
20
25
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 5. Forward Power Dissipation
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3
30
140
NTST30100SG, NTSB30100S−1G
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
10
1
50% Duty Cycle
20%
0.1
10%
5%
2%
1%
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
t, Pulse Time (sec)
1
10
Figure 6. Typical Transient Thermal Response, Junction−to−Case
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4
100
1000
NTST30100SG, NTSB30100S−1G
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
N
STYLE 6:
PIN 1.
2.
3.
4.
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5
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
NTST30100SG, NTSB30100S−1G
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
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6
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
NTST30100S/D