NTST30100SG, NTSB30100S-1G Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com Exceptionally Low VF = 0.39 V at IF = 5 A 1 2, 4 Features 3 • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability These are Pb−Free Devices 4 TO−220 CASE 221A STYLE 6 Typical Applications • Switching Power Supplies including Notebook/Netbook Adapters, • • • • MARKING DIAGRAMS ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing Diodes Reverse Battery Protection Instrumentation 1 2 AYWW TS30100SG AKA 3 4 I2PAK (TO−262) CASE 418D STYLE 3 AYWW TS30100SG AKA Mechanical Characteristics • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 12 3 A Y WW G AKA = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Designator ORDERING INFORMATION Package Shipping† NTST30100SG TO−220 (Pb−Free) 50 Units/Rail NTSB30100S−1G TO−262 (Pb−Free) 50 Units/Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 4 1 Publication Order Number: NTST30100S/D NTST30100SG, NTSB30100S−1G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 105°C) IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 95°C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A Operating Junction Temperature TJ −40 to +150 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value RqJC RqJA 2.0 70 Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 10 A, TJ = 25°C) (IF = 30 A, TJ = 25°C) Typ Max 0.47 0.55 0.84 − − 0.95 0.39 0.51 0.7 − − 0.78 vF (IF = 5 A, TJ = 125°C) (IF = 10 A, TJ = 125°C) (IF = 30 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (VR = 70 V, TJ = 125°C) V IR mA mA 27 11 (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) Unit 70 23 1000 45 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% http://onsemi.com 2 NTST30100SG, NTSB30100S−1G TYPICAL CHARACTERISTICS 1000 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C 10 TA = 25°C 1 0.1 0.0 TA = 125°C 0.2 0.4 0.6 0.8 1.0 1.2 TA = 125°C 1 0.1 TA = 25°C 0.01 30 40 50 60 70 80 90 100 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Typical Reverse Characteristics 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 60 TJ = 25°C 55 RqJC = 2.0°C/W dc 50 45 40 35 30 25 SQUARE WAVE 20 15 10 5 0 1 10 VR, REVERSE VOLTAGE (V) 100 0 Figure 3. Typical Junction Capacitance 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 4. Current Derating, Case 45 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) C, JUNCTION CAPACITANCE (pF) 10 0.001 20 10000 100 0.1 TA = 150°C 100 IPK/IAV = 10 40 35 TA = 150°C IPK/IAV = 20 30 25 IPK/IAV = 5 SQUARE WAVE 20 15 dc 10 5 0 0 5 10 15 20 25 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Forward Power Dissipation http://onsemi.com 3 30 140 NTST30100SG, NTSB30100S−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 6. Typical Transient Thermal Response, Junction−to−Case http://onsemi.com 4 100 1000 NTST30100SG, NTSB30100S−1G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 N STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 5 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 NTST30100SG, NTSB30100S−1G PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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