MBR3045 D

MBR3045ST,
MBRB3045CT-1
Switch‐mode
Power Rectifier
Features and Benefits
• Dual Diode Construction − Terminals 1 and 3 May Be Connected for
•
•
•
•
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Parallel Operation at Full Rating
45 V Blocking Voltage
Low Forward Voltage Drop
175°C Operating Junction Temperature
These are Pb-Free Devices
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
2, 4
1
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight (Approximately): 1.9 Grams (TO−220)
•
•
•
MARKING
DIAGRAMS
1.5 Grams (TO−262)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Epoxy Meets UL 94 V−0 @ 0.125 in
4
TO−220
CASE 221A
STYLE 6
AYWW
B3045G
AKA
I2PAK (TO−262)
CASE 418D
STYLE 3
AYWW
B3045CTG
AKA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
45
V
IF(AV)
30
15
A
Peak Repetitive Forward Current, per Diode
(Square Wave, VR = 45 V, 20 kHz)
IFRM
30
A
Non-Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions,
Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Current, per Diode
(2.0 ms, 1.0 kHz)
IRRM
2.0
A
Storage Temperature Range
Tstg
−65 to
+175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to
+175
°C
Peak Surge Junction Temperature
(Forward Current Applied)
TJ(pk)
175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Current
(TC = 130°C)
Per Device
Per Diode
September, 2014 − Rev. 9
2
3
4
12
3
A
Y
WW
AKA
G
= Assembly Location
= Year
= Work Week
= Polarity Designator
= Pb−Free Device
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction-to-Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2014
1
1
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
MBR3045ST/D
MBR3045ST, MBRB3045CT−1
THERMAL CHARACTERISTICS (Per Diode)
Characteristic
Symbol
Value
Unit
RθJC
1.5
°C/W
Symbol
Value
Unit
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (Per Diode)
Characteristic
Instantaneous Forward Voltage (Note 2)
(iF = 15 Amp, TC = 25°C)
(iF = 15 Amp, TC = 125°C)
(iF = 30 Amp, TC = 25°C)
(iF = 30 Amp, TC = 125°C)
vF
Instantaneous Reverse Current (Note 2)
(VR = 45 Volts, TC = 25°C)
(VR = 45 Volts, TC = 125°C)
IR
V
0.62
0.57
0.76
0.72
mA
0.2
40
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2 Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%
1000
i F, MAXIMUM FORWARD CURRENT (AMPS)
1000
150°C
100
TJ = 125°C
10
1.0
25°C
0.1
150°C
100
TJ = 125°C
10
1.0
25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0.2
0.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.8
0.6
TJ = 150°C
125°C
100°C
75°C
25°C
0
10
1.2
1.4
1.6
Figure 2. Maximum Reverse Current
200
100
40
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.004
0.002
1.0
vF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
IR , REVERSE CURRENT (mA)
0
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
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2
50
1.8
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
24
dc
20
SQUARE WAVE
16
RATED VOLTAGE APPLIED
RqJC = 1.1°C/W
12
8.0
4.0
0
110
120
130
140
150
24
RqJA = 16°C/W
(With TO-220 Heat Sink)
RqJA = 60°C/W
(No Heat Sink)
20
dc
16
RATED VR APPLIED
12
SQUARE WAVE
8.0
dc
4.0
SQUARE WAVE
0
170
160
0
20
40
60
80
100
120
140
160 180
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case
Figure 5. Current Derating, Ambient
10000
32
SQUARE WAVE
I
(RESISTIVELOAD) PK + p
I
AV
28
TJ = 25°C
f = 1 MHz
C, CAPACITANCE (pF)
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
MBR3045ST, MBRB3045CT−1
24
I
(CAPACITATIVELOAD) PK + 5.0
I
20
dc
AV
16
10
12
20
1000
100
8.0
TJ = 125°C
4.0
0
10
0
4.0
8.0
12
16
20
24
28
32
36
40
0
IF, AVERAGE FORWARD CURRENT (AMPS)
10
20
30
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
Figure 6. Forward Power Dissipation
ORDERING INFORMATION
Device
Package
Shipping
MBR3045STG
TO−220
(Pb−Free)
50 Units/Rail
MBRB3045CT−1G
TO−262
(Pb−Free)
50 Units/Rail
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3
40
50
MBR3045ST, MBRB3045CT−1
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
N
STYLE 6:
PIN 1.
2.
3.
4.
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4
ANODE
CATHODE
ANODE
CATHODE
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MBR3045ST, MBRB3045CT−1
PACKAGE DIMENSIONS
I2PAK (TO−262)
CASE 418D
ISSUE D
C
E
V
−B−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
A
W
1
2
DIM
A
B
C
D
E
F
G
H
J
K
S
V
W
3
F
−T−
SEATING
PLANE
K
S
J
G
D 3 PL
0.13 (0.005) M T B
H
M
INCHES
MIN
MAX
0.335
0.380
0.380
0.406
0.160
0.185
0.026
0.035
0.045
0.055
0.122 REF
0.100 BSC
0.094
0.110
0.013
0.025
0.500
0.562
0.390 REF
0.045
0.070
0.522
0.551
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
8.51
9.65
9.65
10.31
4.06
4.70
0.66
0.89
1.14
1.40
3.10 REF
2.54 BSC
2.39
2.79
0.33
0.64
12.70
14.27
9.90 REF
1.14
1.78
13.25
14.00
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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MBR3045ST/D