MBR30H80CT, MBRB30H80CT-1 SWITCHMODE™ Power Rectifier 80 V, 30 A http://onsemi.com Features and Benefits • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES 80 VOLTS Low Power Loss/High Efficiency High Surge Capacity 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications 1 • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 • • • • • • MARKING DIAGRAM 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C TO−220AB CASE 221A PLASTIC 1 2 AYWW B30H80G AKA 3 4 I2PAK (TO−262) CASE 418D PLASTIC STYLE 3 MAXIMUM RATINGS Please See the Table on the Following Page AYWW B30H80G AKA 12 3 A Y WW B30H80 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 February, 2009 − Rev. 2 1 Publication Order Number: MBR30H80CT/D MBR30H80CT, MBRB30H80CT−1 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 V Average Rectified Forward Current (TC = 130°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 130°C) IFM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 240 A Storage Temperature Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −20 to +150 °C > 400 > 8000 V A 15 30 ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 2.0 70 Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 3 A, TJ = 25°C) (iF = 3 A, TJ = 25°C) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − − − − 0.49 0.37 0.65 0.55 0.77 0.67 0.58 0.45 0.78 0.65 0.88 0.75 − − 12 0.017 35 0.250 V mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBR30H80CTG TO−220 (Pb−Free) 50 Units / Rail MBRB30H80CT−1G I2PAK (Pb−Free) 50 Units / Rail Device Order Number http://onsemi.com 2 Unit MBR30H80CT, MBRB30H80CT−1 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 150°C TJ = 25°C 1 125°C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 150°C 150°C 1.0E−02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−03 125°C 1.0E−03 125°C 1.0E−04 1.0E−04 1.0E−05 TJ = 25°C 1.0E−05 1.0E−06 1.0E−06 TJ = 25°C 10 20 30 40 50 60 70 80 1.0E−07 0 10 20 30 40 50 60 70 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 80 6 RqJC = 2°C/W dc IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 150°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E−02 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 80 TJ = 25°C 1.0 0.1 0.0 1.0 1.0E−01 1.0E−07 0 10.0 SQUARE WAVE 90 100 110 120 130 140 150 RJA = 70°C/W 5 dc 4 3 2 SQUARE WAVE 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg Figure 6. Current Derating, Ambient per Leg http://onsemi.com 3 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 TJ = 150°C VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) MBR30H80CT, MBRB30H80CT−1 SQUARE WAVE dc 0 2 TJ = 25°C 1000 100 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IO, AVERAGE FORWARD CURRENT (A) 10 0 10 20 R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 30 40 50 60 C, CAPACITANCE (pF) 70 80 Figure 8. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Ambient 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR30H80CT, MBRB30H80CT−1 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 5 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR30H80CT, MBRB30H80CT−1 PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M STYLE 3: PIN 1. 2. 3. 4. INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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