TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC607 v04.0809 Typical Applications Features The HMC607 is ideal for: High Isolation: >50 dB @ 10 GHz • Telecom Infrastructure Low Insertion Loss: 1.4 dB Typical @ 6.0 GHz • Microwave Radio & VSAT Non-Reflective Design • Military Radios, Radar & ECM Die Size: 2.05 x 1.1 x 0.1 mm • Space Systems TE • Test Instrumentation Functional Diagram General Description LE The HMC607 is a broadband high isolation nonreflective GaAs MESFET SPDT MMIC chip. Covering DC to 15 GHz, the switch features >55 dB isolation at lower frequencies and >45 dB at higher frequencies. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply. B SO SWITCHES - CHIP 4 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Electrical Specifi cations, TA = +25° C, With 0/-5V Control, 50 Ohm System Parameter Min. DC - 6 GHz DC - 10 GHz DC - 15 GHz Insertion Loss O Frequency DC - 6 GHz DC - 10 GHz DC - 15 GHz Isolation* 55 50 45 Typ. Max. Units 1.4 1.7 2.7 1.7 2.5 3.4 dB dB dB 65 60 55 dB dB dB Return Loss “On State” DC - 6 GHz DC - 15 GHz 17 11 dB dB Return Loss RF1, RF2 “Off State” DC - 6 GHz DC - 15 GHz 13 17 dB dB Input Power for 1 dB Compression 0.5 - 15 GHz 21 26 dBm Input Third Order Intercept (Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation) 0.5 - 15 GHz 44 49 dBm Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) DC - 15 GHz 3 5 ns ns *Isolation data taken with probe on the die 4 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Insertion Loss Isolation* 0 -15 ISOLATION (dB) -1 -2 -4 -45 4 -60 -90 0 3 6 9 12 15 0 FREQUENCY (GHz) 3 6 9 12 15 LE FREQUENCY (GHz) Return Loss 0.1 and 1 dB Input Compression Point -5 30 RFC RF1, RF2 on RF1, RF2 off -25 -35 0 B SO -15 2 4 6 8 10 12 25 20 SWITCHES - CHIP -75 -5 RETURN LOSS (dB) RF1 RF2 -30 TE +25 C +85 C -55 C -3 COMPRESSION POINT (dBm) INSERTION LOSS (dB) 0 0.1 dB Compression Point 1 dB Compression Point 15 10 14 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz) 12 14 16 O Input Third Order Intercept Point 60 55 IP3 (dBm) 50 45 +25 C +85 C -55 C 40 35 30 0 2 4 6 8 10 FREQUENCY (GHz) 12 14 16 *Isolation data taken with probe on the die For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 33 HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Absolute Maximum Ratings +30 dBm (@ +50 °C) Control Voltage Range (A, A, B, B) +1V to -7.5 Vdc Channel Temperature 150 °C Thermal Resistance (RTH) (junction to lead) 94 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C State Bias Condition Low 0 to -0.2V @ 10 uA Max. High -5V @ 10 uA Typ. to -7V @ 45 uA Typ. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Truth Table Control Input B Signal Path State A A High ON Low OFF ON High OFF OFF Low ON ON Low High Low High Low High High Low Low Low High High RFC to RF1 RFC to RF2 OFF LE B TE RF Input Power (A, A, B, B = 0/-5V) (0.5 - 6 GHz) Caution: Do not “Hot Switch” power levels greater than +27 dBm (A, A, B, B = 0/-5V). B SO SWITCHES - CHIP 4 Control Voltages O Suggested Driver Circuit for Single Line Control 4 - 34 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Die Packaging Information [1] Standard Alternate WP-17 (Waffle Pack) [2] O [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 4 SWITCHES - CHIP B SO LE TE Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND PAD IS .004” SQUARE 4. BACKSIDE METALIZATION: GOLD 5. BACKSIDE METAL IS GROUND 6. BOND PAD METALIZATION: GOLD 7. NO CONNECTION REQUIRED FOR UNLABLED BOND PADS. 8. OVERALL DIE SIZE ±.002” Pad Descriptions Pad Number Function Description 1, 4, 7 RF1, RFC, RF2 This pin is DC coupled and matched to 50 Ohm. Blocking capacitors are required if RF line potential is not equal to 0V. 2, 10 B 3, 11 B 5, 8 A 6, 9 A Die Bottom GND Interface Schematic See truth table and control voltage table. Alternate A & B control pads provided. Die bottom must be connected to RF ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 35 HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Assembly Diagram TE LE B SO O SWITCHES - CHIP 4 4 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC607 v04.0809 GaAs MMIC HIGH ISOLATION SPDT SWITCH, DC - 15 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Wire Bond 0.076mm (0.003”) TE 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC RF Ground Plane 4 Handling Precautions Follow these precautions to avoid permanent damage. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. LE Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Static Sensitivity: Follow ESD precautions to protect against ESD strikes. B SO Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. RF Ground Plane SWITCHES - CHIP Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 0.150mm (0.005”) Thick Moly Tab Mounting 0.254mm (0.010”) Thick Alumina Thin Film Substrate The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Figure 2. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding O Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC bias, IF1 and IF2) or Ribbon Bond (RF and LO ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 37