SiZ700DT-DS

SPICE Device Model SiZ700DT
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
DESCRIPTION
CHARACTERISTICS
The attached SPICE model describes the typical electrical
characteristics of the n-channel vertical DMOS. The
subcircuit model is extracted and optimized over the - 55 °C
to 125 °C temperature ranges under the pulsed 0 V to 10 V
gate drive. The saturated output impedance is best fit at the
gate bias near the threshold voltage. A novel gate-to-drain
feedback capacitance network is used to model the gate
charge characteristics while avoiding convergence
difficulties of the switched Cgd model. All model parameter
values are optimized to provide a best fit to the measured
electrical data and are not intended as an exact physical
interpretation of the device.
• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the - 55 °C to 125 °C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse
Recovery Characteristics
SUBCIRCUIT MODEL SCHEMATIC
S1/D2
D1
D
D
R1
3
M2
G
G1
Rg
G
G2
CGS
Rg
M1
R1
3
M2
DBD
CGS
DBD
M1
S
S
S2
Note
This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer to
the appropriate datasheet of the same number for guaranteed specification limits.
Document Number: 65645
S09-2401-Rev. A, 16-Nov-09
www.vishay.com
1
SPICE Device Model SiZ700DT
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
SIMULATED MEASURED
DATA
DATA
TEST CONDITIONS
UNIT
Static
Gate-Source Threshold Voltage
Drain-Source On-State Resistanceb
VDS = VGS, ID = 250 µA
VGS(th)
RDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Ch-1
1.3
-
Ch-2
1.6
-
VGS = 10 V, ID = 15 A
Ch-1
0.007
0.007
VGS = 10 V, ID = 20 A
Ch-2
0.0044
0.0047
VGS = 4.5 V, ID = 10 A
Ch-1
0.0089
0.0088
VGS = 4.5 V, ID = 15 A
Ch-2
0.0055
0.0054
VDS = 10 V, ID = 15 A
Ch-1
48
60
VDS = 10 V, ID = 20 A
Ch-2
72
100
IS = 2 A, VGS = 0 V
Ch-1
0.74
0.80
IS = 2.3 A, VGS = 0 V
Ch-2
0.72
0.80
Ch-1
1290
1300
V
Ω
S
V
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Ciss
Channel 1
VDS = 10 V, VGS = 0 V,
f = 1 MHz
Ch-2
3860
3860
Ch-1
293
290
Channel 2
VDS = - 10 V, VGS = 0 V,
f = 1 MHz
Ch-2
765
760
Ch-1
133
132
Ch-2
356
350
VDS = 10 V, VGS = 10 V, ID = 15 A
Ch-1
20
20
VDS = 10 V, VGS = 10 V, ID = 20 A
Ch-2
58
55
Ch-1
9.9
9.5
Ch-2
Channel 1
VDS = 10 V, VGS = 4.5 V, ID = 15 A Ch-1
28
27
3.2
3.2
Ch-2
Channel 2
VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-1
9.2
9.2
2.4
2.4
Ch-2
7.1
7.1
Coss
Crss
Qg
Qgs
Qgd
pF
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 65645
S09-2401-Rev. A, 16-Nov-09
SPICE Device Model SiZ700DT
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted
Channel 1
1.2
60
TJ = 125 °C
VGS = 10 V, 7 V, 6 V, 5 V, 4 V
VGS = 3 V
ID - Drain Current (A)
45
ID - Drain Current (A)
1.0
30
0.8
0.6
TJ = - 55 °C
0.4
15
0.2
TJ = 25 °C
0
0
0.3
0.6
0.9
1.2
0.0
0.0
1.5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
0.016
1800
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1500
0.012
VGS = 4.5 V
0.008
VGS = 10 V
1200
900
600
0.004
Coss
300
Crss
0
0.000
0
15
30
45
60
0
5
ID - Drain Current (A)
10
15
20
VDS - Drain-to-Source Voltage (V)
10
100
10
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
ID = 15 A
VDS = 10 V
6
VDS = 15 V
4
1
TJ = 25 °C
TJ = 150 °C
0.1
0.01
2
0.001
0
0
5
10
15
Qg - Total Gate Charge (nC)
20
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Note
Dots and squares represent measured data.
Document Number: 65645
S09-2401-Rev. A, 16-Nov-09
www.vishay.com
3
SPICE Device Model SiZ700DT
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted
Channel 1
0.030
1.8
ID = 10 A
ID = 15 A
RDS(on) - On-Resistance (Ω)
0.025
RDS(on) - On-Resistance
Normalized
1.5
VGS = 10 V, 4.5 V
1.2
0.9
0.020
0.015
TJ = 125 °C
0.010
TJ = 25 °C
0.005
0.6
- 50
0.000
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to-Source Voltage (V)
Note
Dots and squares represent measured data.
www.vishay.com
4
Document Number: 65645
S09-2401-Rev. A, 16-Nov-09
SPICE Device Model SiZ700DT
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA TJ = 25 °C, unless otherwise noted
Channel 2
1.2
60
TJ = 125 °C
1.0
VGS = 10 V, 7 V, 6 V, 5 V, 4 V, 3 V
ID - Drain Current (A)
ID - Drain Current (A)
45
30
0.8
0.6
0.4
15
TJ = - 55 °C
0.2
TJ = 25 °C
0
0
0.2
0.4
0.6
0.8
0.0
0.0
1.0
0.5
VDS - Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
0.010
5000
0.008
4000
0.006
VGS = 4.5 V
0.004
VGS = 10 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
3000
2000
Coss
0.002
1000
0.000
0
Crss
0
15
30
45
60
0
5
ID - Drain Current (A)
10
15
20
VDS - Drain-to-Source Voltage (V)
100
10
10
8
IS - Source Current (A)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
6
VDS = 10 V
4
VDS = 15 V
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
2
0.001
0
0
11
22
33
Qg - Total Gate Charge (nC)
44
55
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Note
Dots and squares represent measured data.
Document Number: 65645
S09-2401-Rev. A, 16-Nov-09
www.vishay.com
5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1