New Product SiZ700DT Vishay Siliconix N-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) (Ω) ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 9.5 nC 27 nC APPLICATIONS • Notebook System Power • POL PowerPAIR™ 6 x 3.7 3.73 mm G1 Pin 1 1 D1 6 S2 5 S2 VIN 3 6.00 mm VIN 2 D1 S1/D2 G2 GHS 1 D1 2 VIN/D1 N-Channel 1 MOSFET GLS/G2 GND 4 4 VSW/S1/D2 VSW GLS GND 6 5 GHS/G1 VIN 3 N-Channel 2 MOSFET GND/S2 Ordering Information: SiZ700DT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current Source Drain Current Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD Channel-1 20 ± 16 16a 16a 16a 16a 17.3b, c 13.9b, c 60 13.1b, c 10.5b, c 60 14.7 1.96 2.36 1.5 16a 2.3b, c 2.8 1.78 1.4b, c 0.9b, c 1.47b, c 0.94b, c b, c TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Channel-2 20 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Channel-1 Parameter b, f t ≤ 10 s Symbol RthJA RthJC Channel-2 Typ. Max. Typ. Max. 39 5.7 53 7.1 33 3.7 45 4.6 Unit Maximum Junction-to-Ambient °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W for Channel-1 and 85 °C/W for Channel-2. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 1 New Product SiZ700DT Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA Ch-1 20 VGS = 0 V, ID = 250 µA Ch-2 20 ID = 250 µA Ch-1 ID = 250 µA Ch-2 21 ID = 250 µA Ch-1 - 5.8 V 21 mV/°C ID = 250 µA Ch-2 VDS = VGS, ID = 250 µA Ch-1 0.8 2.2 VDS = VGS, ID = 250 µA Ch-2 0.8 2.2 - 5.8 Ch-1 ± 100 Ch-2 ± 100 VDS = 20 V, VGS = 0 V Ch-1 1 VDS = 20 V, VGS = 0 V Ch-2 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-1 10 VDS = 0 V, VGS = ± 16 V VDS = 20 V, VGS = 0 V, TJ = 55 °C Ch-2 VDS ≥ 5 V, VGS = 10 V Ch-1 30 VDS ≥ 5 V, VGS = 10 V Ch-2 30 VGS = 10 V, ID = 15 A Ch-1 0.007 VGS = 10 V, ID = 20 A Ch-2 0.0047 0.0058 VGS = 4.5 V, ID = 10 A Ch-1 0.0088 0.0108 VGS = 4.5 V, ID = 15 A Ch-2 0.0054 0.0066 VDS = 10 V, ID = 15 A Ch-1 60 VDS = 10 V, ID = 20 A Ch-2 100 Ch-1 1300 Ch-2 3860 Ch-1 290 Ch-2 760 Ch-1 132 Ch-2 350 VDS = 10 V, VGS = 10 V, ID = 15 A Ch-1 20 VDS = 10 V, VGS = 10 V, ID = 20 A Ch-2 55 85 Ch-1 9.5 15 45 V nA µA 10 A 0.0086 Ω S Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Ciss Channel-1 VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss Qg Channel-2 VDS = 10 V, VGS = 0 V, f = 1 MHz Channel-1 VDS = 10 V, VGS = 4.5 V, ID = 15 A Ch-2 27 Ch-1 3.2 Channel-2 VDS = 10 V, VGS = 4.5 V, ID = 20 A Ch-2 9.2 Ch-1 2.4 Qgs Qgd Rg Ch-2 f = 1 MHz pF 35 nC 7.1 Ch-1 0.3 1.3 2.6 Ch-2 0.2 1.0 2.0 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SiZ700DT Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Ch-1 9 15 Ch-2 13 20 Ch-1 8 15 Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf td(on) tr Channel-1 VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω Channel-2 VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 4.5 V, Rg = 1 Ω Channel-1 VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω tf Channel-2 VDD = 10 V, RL = 10 Ω ID ≅ 1.0 A, VGEN = 10 V, Rg = 1 Ω IS TC = 25 °C td(off) Ch-2 8 15 Ch-1 25 40 Ch-2 52 80 Ch-1 8 15 Ch-2 15 25 Ch-1 8 15 Ch-2 12 20 Ch-1 9 15 Ch-2 8 15 Ch-1 25 40 Ch-2 47 75 Ch-1 8 15 Ch-2 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD 16 Ch-1 60 Ch-2 0.8 1.2 IS = 2.3 A, VGS = 0 V Ch-2 0.8 1.2 Ch-1 25 50 Ch-2 40 80 Ch-1 13 25 Ch-2 31 60 Ch-1 12 Ch-2 21 Ch-1 13 Ch-2 19 Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Channel-2 IF = 2.3 A, dI/dt = 100 A/µs, TJ = 25 °C A 60 Ch-1 trr tb 14.7 Ch-2 IS = 2.0 A, VGS = 0 V Channel-1 IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time Ch-1 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 3 New Product SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 1.2 VGS = 10 V thru 4 V 1.0 VGS = 3 V I D - Drain Current (A) I D - Drain Current (A) 45 30 0.8 0.6 0.4 TC = 25 °C 15 0.2 TC = 125 °C TC = - 55 °C 0 0.0 0.3 0.6 0.9 1.2 0.0 0.0 1.5 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3.0 1800 0.016 Ciss C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1500 0.012 VGS = 4.5 V 0.008 VGS = 10 V 1200 900 600 Coss 0.004 300 Crss 0 0.000 0 15 30 45 0 60 10 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 20 1.8 10 ID = 15 A ID = 15 A 8 VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 1.5 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 VGS = 10 V 1.2 VGS = 4.5 V 0.9 2 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 20 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.030 100 I S - Source Current (A) TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C R DS(on) - On-Resistance (Ω) 0.025 10 0.01 0.001 0.0 0.020 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.5 60 50 0.2 40 - 0.1 ID = 5 mA - 0.4 Power (W) VGS(th) Variance (V) 2 30 20 ID = 250 µA - 0.7 10 - 1.0 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 1 10 Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 10 µs 100 µs 10 I D - Drain Current (A) 0.1 Time (s) 1 ms 10 ms 1 100 ms 1 s, 10 s 0.1 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 5 New Product SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 40 30 20 Package Limited 10 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) Current Derating* 25 1.76 20 Power (W) Power (W) 1.32 15 10 0.88 0.44 5 0 0.00 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SiZ700DT Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 7 New Product SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 60 1.2 VGS = 10 V thru 3 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 45 30 0.8 0.6 0.4 TC = 25 °C 15 0.2 TC = 125 °C 0 0.0 0.2 0.4 0.6 0.8 TC = - 55 °C 0.0 0.0 1.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.010 5000 0.008 4000 VGS = 4.5 V 0.006 VGS = 10 V 0.004 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) Ciss 3000 2000 Coss 0.002 1000 0.000 0 Crss 0 15 30 45 60 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 1.6 ID = 20 A ID = 20 A 8 VGS = 10 V VDS = 10 V 6 VDS = 5 V VDS = 15 V 4 2 (Normalized) 1.4 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 10 1.2 VGS = 4.5 V 1.0 0.8 0 0 11 22 33 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 8 44 55 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.020 I S - Source Current (A) 10 TJ = 25 °C TJ = 150 °C 1 0.1 TJ = - 50 °C 0.01 0.015 0.010 TJ = 125 °C 0.005 TJ = 25 °C 0.000 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source 0.5 150 0.2 120 - 0.1 Power (W) VGS(th) Variance (V) 0.001 0.0 R DS(on) - On-Resistance (Ω) 100 ID = 5 mA - 0.4 9 10 90 60 ID = 250 µA - 0.7 - 1.0 - 50 30 0 - 25 0 25 50 75 100 125 150 0.001 0.01 TJ - Temperature (°C) 1 10 Single Pulse Power Threshold Voltage 100 Limited by RDS(on)* 10 µs, 100 µs 10 I D - Drain Current (A) 0.1 Time (s) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 100 s, DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 9 New Product SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted I D - Drain Current (A) 60 45 30 Package Limited 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 1.76 40 32 Power (W) Power (W) 1.32 24 16 0.88 0.44 8 0.00 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 New Product SiZ700DT Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 85 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69090. Document Number: 69090 S09-0534-Rev. A, 06-Apr-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1