2N6804 Qualified Levels: JAN, JANTX, and JANTXV P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/562 DESCRIPTION This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. TO-204AA (TO-3) Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6804 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/562. • RoHS compliant version available (commercial grade only). (See part nomenclature for all available options.) APPLICATIONS / BENEFITS • • Low-profile metal can design. Military and other high-reliability applications. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ T A = +25 °C @ T C = +25 °C Drain-Source Voltage, dc Gate-Source Voltage, dc (2) Drain Current, dc @ T C = +25 ºC (2) Drain Current, dc @ T C = +100 ºC (3) Off-State Current (Peak Total Value) Source Current NOTES: 1. 2. 3. (1) Symbol Value T J & T stg R ӨJC V DS V GS I D1 I D2 I DM -55 to +150 1.67 4 75 -100 ± 20 -11.0 -7.0 -50 IS -11 PT Unit o °C C/W W V V A A Ω A Derated linearly by 0.6 W/ºC for T C > +25 ºC. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may be limited by pin diameter: MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 I DM = 4 x I D1 as calculated in note 2. Website: www.microsemi.com T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 1 of 7 2N6804 MECHANICAL and PACKAGING • • • • • CASE: TO-3 metal can. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: Manufacturer’s ID, part number, date code, ESD symbol. WEIGHT: Approximately 12.7 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6804 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 2 of 7 2N6804 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = -0.25 mA V DS ≥ V GS , I D = -0.25 mA, T J = +125 °C V DS ≥ V GS , I D = -0.25 mA, T J = -55 °C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 °C Symbol Min. V (BR)DSS -100 V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Max. Unit V -4.0 V -5.0 I GSS1 I GSS2 ±100 ±200 nA Drain Current V GS = 0 V, V DS = -80 V I DSS1 -25 µA Drain Current V GS = 0 V, V DS = -80 V, T J = +125 °C I DSS2 0.25 mA r DS(on)1 0.30 Ω r DS(on)2 0.36 Ω r DS(on)3 0.55 V SD -4.7 V Max. Unit Q g(on) 29.0 nC Q gs 7.1 nC Q gd 21.0 nC Static Drain-Source On-State Resistance V GS = -10 V, I D = -7 A pulsed Static Drain-Source On-State Resistance V GS = -10 V, I D = -11 A pulsed Static Drain-Source On-State Resistance T J = +125°C V GS = -10 V, I D = -7 A pulsed Diode Forward Voltage V GS = 0 V, I S = -11.0 A pulsed Ω DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge V GS = -10 V, I D = -11 A, V DS = -50 V Gate to Source Charge V GS = -10 V, I D = -11 A, V DS = -50 V Gate to Drain Charge V GS = -10 V, I D = -11 A, V DS = -50 V T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Symbol Min. Page 3 of 7 2N6804 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(on) 60 ns Rinse time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V tr 140 ns Turn-off delay time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V t d(off) 140 ns Fall time I D = -11 A, V GS = -10 V, R G = 7.5 Ω, V DD = -35 V tf 140 ns Diode Reverse Recovery Time di/dt ≤ 100 A/µs, V DD ≤ -50 V, I F = -11 A t rr 250 ns T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 4 of 7 2N6804 Thermal Response (ZӨJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) ID DRAIN CURRENT (AMPERES) FIGURE 1 Transient Thermal impedance T C , CASE TEMPERATURE (°C) FIGURE 2 Maximum Drain Current vs Case Temperature T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 5 of 7 2N6804 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 Safe Operating Area T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 6 of 7 2N6804 PACKAGE DIMENSIONS NOTE: INCHES DIM 1. Dimensions are in inches. MIN MAX 2. Millimeters are given for general information only. A .875 3. These dimensions should be measured at points .050 B .060 .135 inch (1.27 mm) and .055 inch (1.40 mm) below C .250 .360 seating plane. When gauge is not used measurement D .312 .500 will be made at the seating plane. D2 .050 4. The seating plane of the header shall be flat within E .038 .043 .001 inch (0.03 mm) concave to .004 inch (0.10 mm) F .131 .188 G 1.177 1.197 convex inside a .930 inch (23.62 mm) diameter circle H .655 .675 on the center of the header and flat within .001 inch J .205 .225 (0.03 mm) concave to .006 inch (0.15 mm) convex K .420 .440 overall. L .495 .525 5. Mounting holes shall be deburred on the seating M .151 .161 plane side. 6. Drain is electrically connected to the case. 7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. MILLIMETERS MIN MAX 22.23 1.52 3.43 6.35 9.15 7.92 12.70 1.27 0.97 1.10 3.33 4.78 29.90 30.40 16.64 17.15 5.21 5.72 10.67 11.18 12.57 13.34 3.84 4.09 NOTES 3 DIA. Radius 3 3 Radius DIA. SCHEMATIC T4-LDS-0113, Rev. 3 (121514) ©2012 Microsemi Corporation Page 7 of 7