VSSB310 100V Surface Mount Trench MOS Barrier Schottky Rectifier 3.0A FEATURES • Low profile package • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VSSB310 Device marking code UNIT V3B Maximum repetitive peak reverse voltage VRRM 100 V IF (1) 3.0 IF (2) 1.9 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 80 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 50 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C Maximum DC forward current A ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage Instantaneous forward voltage Reverse current TEST CONDITIONS IR = 1.0 mA IF = 3.0 A VR = 70 V VR = 100 V Typical junction capacitance TA = 25 °C TA = 25 °C TA = 125 °C SYMBOL TYP. MAX. UNIT VBR 100 (minimum) - V 0.62 0.70 0.56 0.65 1.5 - µA 1.2 - mA 7.0 250 µA 3.6 20 mA 230 - pF VF (1) IR (2) TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C 4.0 V, 1 MHz CJ V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VSSB310 RθJA (1) 120 RθJM (2) 15 UNIT °C/W Notes Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance RθJA - junction to ambient Units mounted on P.C.B. with 10 mm x 10 mm copper pad areas. RθJM - junction to mount (1) (2) E-mail: [email protected] 1 of 2 Web Site: www.taychipst.com VSSB310 100V Surface Mount Trench MOS Barrier Schottky Rectifier RATINGS AND CHARACTERISTIC CURVES Average Forward Rectified Current (A) 4.0 2.4 3.5 D = 0.5 Average Power Loss (W) 2.5 2.0 1.5 1.0 D = 0.8 D = 0.3 2.0 3.0 D = 0.2 1.8 1.6 1.4 D = 1.0 D = 0.1 1.2 1.0 T 0.8 0.6 0.4 0.5 D = tp/T 0.2 TM Measured at Terminal tp 0 0 25 75 50 100 125 0.4 0 150 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics 1000 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) VSSB310 2.2 0 10 TA = 100 °C TA = 125 °C 1 100 TA = 25 °C 0.1 10 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 0.1 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 3.0A TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 90 100 10 0.1 1 10 100 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics E-mail: [email protected] 100 1 0.01 0.0001 10 Junction to Ambient Fig. 6 - Typical Transient Thermal Impedance 2 of 2 Web Site: www.taychipst.com