WILLAS FM120-M+ SESDxxxWB THRU Transient Voltage Suppressors for ESD Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. DESCRIPTION • Low power loss, high efficiency. forward voltage drop. voltage sensitive • High current capability, The SESDxxxWB SERIES low is designed to protect • High surge capability. components from ESD. Excellent clamping capability, low leakage, for overvoltage protection. • Guardring Ultra high-speed switching. and fast •response time provide best in class protection on designs that Silicon epitaxial planar chip, metal silicon junction. • are exposed to ESD. Because of its small size, it is suited for use in • Lead-free parts meet environmental standards of MIL-STD-19500 /228 cellular phones, MP3 players, digital cameras and many other portable • RoHS product for packing code suffix "G" applications where board space is at a premium. 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. WBFBP-02C (1 .0×0.6×0.5) unit: mm 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical data FEATURES 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant z Stand−off 3.3 V−12 V Molded plastic, SOD-123H • Case : Voltage: 0.031(0.8) Typ. 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750 z Low Leakage Method 2026 z Response Time is Typically < 1 ns Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band z ESD Rating of Class 3 (> 16 KV) per Human Body Model • Mounting Position : Any z IEC61000−4−2 Level 4 ESD Protection • Weight : Approximated 0.011 gram z These are Pb−Free Devices MAXIMUM z Pb-Free package is RATINGS availableAND ELECTRICAL CHARACTERISTICS 0.040(1.0) z Ratings at 25℃ ambient unless suffix otherwise specified. RoHS product fortemperature packing code ”G” Single phase half wave, 60Hz, resistive of inductive load. Halogen free product for packing code suffix “H” For capacitive load, derate current by 20% Moisture Sensitivity Level 1 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Ratings @Ta=25℃ Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Parameter VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 V VDC 20 30 40 50 60 100 150 200 V Maximum Average Forward Rectified Current IEC61000−4−2(ESD) IO Peak Forward Surge Current 8.3 ms single half sine-wavePer Human ESD Voltage IFSM superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Contact Body Model Per Machine Model RΘJA Total Power on 1) FR-5 Board (Note Typical JunctionDissipation Capacitance (Note CJ 1) Operating Temperature Range Symbol TJ Thermal Resistance Junction−to−AmbientTSTG Storage Temperature Range -55 to +125 Limit Unit 1.0±30 30 16 KV 80 KV 400 40 120100 PD A V ℃ mW -55 to +150 RΘJA A ℃/W - 65 to1250 +175 260 TL ℃ Lead Solder Temperature − Maximum (10SYMBOL Second Duration) FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Junction and Storage Temperature Range Maximum Average Reverse Current at @T A=25℃ VF 0.50 IR 0.70 Tj, Tstg 0.85 -55 ~ +150 0.5 ℃ 0.9 0.92 U V Stresses exceeding maximum ratings@T may damage the device. Maximum ratings are stress ratings 10 only. A=125℃ Rated DC Blocking Voltage m Functional operation above the recommended. Operating conditions is not implied. Extended exposure to NOTES: stresses above operating conditions may affect device reliability. 1- Measured at 1the MHZrecommended and applied reverse voltage of 4.0 VDC. Thermal Resistance Junction 1. 2FR−5 = 1.0 x 0.75From x 0.62 in. to Ambient 2013-11 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ SESDxxxWB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. Symbol • High surge capability. Parameter overvoltage • Guardring IPP Maximum for Reverse Peak protection. Pulse Current • Ultra high-speed switching. VC Clamping Voltage @ IPP epitaxial planar chip, metal silicon junction. • Silicon parts Reverse meet environmental standards of • Lead-free VRWM Working Peak Voltage 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 IR Maximum Reverse Leakage Current product for packing code suffix "G" @ VRWM • RoHS VBR Halogen free product code suffix "H" Breakdown Voltagefor@packing IT Mechanical data Test Current IT 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant Forward Current • Case : Molded plastic, SOD-123H Forward Voltage @ IF , • Terminals :Plated terminals, solderable per MIL-STD-750 IF VF Ppk 0.031(0.8) Typ. 0.031(0.8) Typ. Peak Power Dissipation Method 2026 C Dimensions in inches and (millimeters) Max. Capacitance @V f =1MHz • Polarity : Indicated by cathode band R=0 and • Mounting Position : Any • Weight : Approximated 0.011 ELECTRICAL CHARACTERISTICS (Tagram = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) Max MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS I (μA) V (V) @ I (Note R BR VRWM (V)unless otherwise specified. Device temperature Ratings at 25℃ ambient 2) @ VRWM Device* Single phase half Marking wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Max Max Min SESD3V3WB Marking Code RATINGS A 3.3 1.0 SESD5V0WB B Reverse Voltage 5.0 Maximum Recurrent Peak Maximum RMS Voltage SESD7V0WB X7 7.0 1.0 1.0 T IT IPP(A) (Note 3) Max mA - 5.9 1.0 9.8 VC (V) @Max Ppk (W) IPP (A) (Note 3) (8 x 20μs) Max Typ 5.0 VRRM 12 6.2 20 VRMS 7.5 14 13 7.330 8.721 14 1.0 40 1.0 28 11.4 15 8.750 16 60 12.3 8.035 30 SESD12VWB C 12 1.0 VDC 13.520 16.5 1.0 40 5.950 Maximum Average Forward Rectified Current IO *Other voltages available upon request. Forward Surge Current 8.3 ms single half sine-wave 2. VPeak ambient temperature of 25°C. BR is measured with a pulse test current IT at anIFSM RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 102 18 80 10 107 100 -55 to +125 120 200 V 42 15.1 56 70 115 105 55 140 60 80 100 150 200 V 23.7 40 120 80 115 65 150 V 140 1.0 30 superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum DC Blocking Voltage 3. Surge current waveform per Figure 3. C (pF) 30 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 V 10 m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2013-11 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. SESDxxxWB Transient Voltage Suppressors for ESD Protection Ordering Information: Device PN Part Number ‐T(1)G(2)‐WS Note: (1) Packing code, Tape & Reel Packing Tape&Reel: 10 Kpcs/Reel (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2013-11 WILLAS ELECTRONIC CORP.