WILLAS SESDXXXWB

WILLAS
FM120-M+
SESDxxxWB
THRU
Transient
Voltage
Suppressors
for ESD
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
RECTIFIERS
-20V- 200V
FM1200-M+
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
DESCRIPTION
• Low power loss, high efficiency.
forward voltage
drop. voltage sensitive
• High current capability,
The SESDxxxWB
SERIES low
is designed
to protect
• High surge capability.
components
from ESD.
Excellent
clamping capability, low leakage,
for overvoltage
protection.
• Guardring
Ultra high-speed
switching.
and fast •response
time provide
best in class protection on designs that
Silicon epitaxial planar chip, metal silicon junction.
•
are exposed to ESD. Because of its small size, it is suited for use in
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
cellular phones,
MP3 players,
digital cameras and many other portable
• RoHS product for packing code suffix "G"
applications where board space is at a premium.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
WBFBP-02C
(1 .0×0.6×0.5)
unit: mm
0.071(1.8)
0.056(1.4)
Halogen free product for packing code suffix "H"
Mechanical data
FEATURES
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
z Stand−off
3.3 V−12
V
Molded plastic,
SOD-123H
• Case : Voltage:
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals
:Plated
terminals,
solderable
per
MIL-STD-750
z Low Leakage
Method 2026
z Response Time
is Typically < 1 ns
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
z ESD Rating of Class 3 (> 16 KV) per Human Body Model
• Mounting Position : Any
z IEC61000−4−2 Level 4 ESD Protection
• Weight : Approximated 0.011 gram
z These are Pb−Free Devices
MAXIMUM
z Pb-Free package
is RATINGS
availableAND ELECTRICAL CHARACTERISTICS
0.040(1.0)
Ratings
at 25℃
ambient
unless suffix
otherwise
specified.
RoHS
product
fortemperature
packing code
”G”
Single phase half wave, 60Hz, resistive of inductive load.
Halogen free product for packing code suffix “H”
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
Maximum Ratings @Ta=25℃
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Parameter
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
VRMS
14
21
28
35
42
56
70
105
140
V
VDC
20
30
40
50
60
100
150
200
V
IO
Peak Forward
Surge Current 8.3 ms single half sine-wavePer Human
ESD
Voltage
IFSM
Maximum Average Forward Rectified Current
IEC61000−4−2(ESD)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Contact
Body Model
Per Machine Model
RΘJA
Total
Power
on 1)
FR-5 Board (Note
Typical
JunctionDissipation
Capacitance (Note
CJ 1)
Operating Temperature Range
Symbol
TJ
-55 to +125
Thermal
Resistance
Junction−to−AmbientTSTG
Storage Temperature
Range
Limit
Unit
1.0±30
30 16
KV
80
KV
400
40
120100
PD
V
mW
A
℃
-55 to +150
RΘJA
A
℃/W
- 65 to1250
+175
260
TL
℃
Lead Solder Temperature
− Maximum (10SYMBOL
Second
Duration)
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Junction and Storage Temperature Range
Maximum Average Reverse Current at @T A=25℃
VF
0.50
IR
0.70
Tj, Tstg
0.85
-55 ~ +150
0.5
℃
0.9
0.92
U
V
Stresses
exceeding
maximum ratings@T
may
damage the device. Maximum ratings are stress ratings
10 only.
A=125℃
Rated DC
Blocking Voltage
m
Functional operation above the recommended. Operating conditions is not implied. Extended exposure to
NOTES:
stresses
above
operating
conditions
may affect device reliability.
1- Measured
at 1the
MHZrecommended
and applied reverse
voltage of 4.0
VDC.
Thermal
Resistance
Junction
1. 2FR−5
= 1.0
x 0.75From
x 0.62
in. to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESDxxxWB
THRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
-20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
ELECTRICAL
CHARACTERISTICS
(Ta = 25°C unless otherwise noted)
optimize
board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
Symbol • High surge capability.
Parameter
overvoltage
• Guardring
IPP
Maximum for
Reverse
Peak protection.
Pulse Current
• Ultra high-speed switching.
VC
Clamping Voltage @ IPP
epitaxial planar chip, metal silicon junction.
• Silicon
parts Reverse
meet environmental
standards of
• Lead-free
VRWM
Working Peak
Voltage
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
IR
Maximum
Reverse
Leakage
Current
product
for packing
code suffix
"G" @ VRWM
• RoHS
Halogen
free product
code suffix "H"
Breakdown
Voltagefor@packing
IT
VBR
Mechanical
data
Test Current
IT
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Forward Current
• Case : Molded plastic, SOD-123H
Forward Voltage @ IF
,
• Terminals :Plated terminals, solderable per MIL-STD-750
IF
VF
Ppk
0.031(0.8) Typ.
0.031(0.8) Typ.
Peak Power
Dissipation
Method
2026
Dimensions in inches and (millimeters)
Max. Capacitance
@V
f =1MHz
• Polarity
: Indicated by
cathode
band
R=0 and
• Mounting Position : Any
•
Weight
: Approximated 0.011
ELECTRICAL
CHARACTERISTICS
(Tagram
= 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
C
Max
MAXIMUM RATINGS AND
ELECTRICAL
CHARACTERISTICS
I (μA)
V (V) @ I (Note
R
BR
VRWM (V)unless otherwise specified.
Device temperature
Ratings at 25℃ ambient
2)
@ VRWM
Device*
Single phase half Marking
wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Max
Max
Min
SESD3V3WB
Marking Code
RATINGS
A
1.0
3.3
SESD5V0WB
B Reverse Voltage
5.0
Maximum Recurrent Peak
Maximum RMS Voltage
SESD7V0WB
X7
7.0
1.0
1.0
T
IT
IPP(A)
(Note 3)
Max
mA
-
5.9
1.0
9.8
VC (V) @Max
Ppk (W)
IPP (A) (Note 3)
(8 x 20μs)
Max
Typ
5.0
VRRM
12
6.2 20
VRMS 7.5 14
13
7.330
8.721
14
1.0 40
1.0 28
11.4
15
8.750
16
60 12.3
8.035
30
SESD12VWB
C
12
1.0 VDC 13.520 15.6
1.0 40
5.950
Maximum Average Forward Rectified Current
IO
*Other
voltages available upon request.
Forward Surge Current 8.3 ms single half sine-wave
2. VPeak
ambient temperature of 25°C.
BR is measured with a pulse test current IT at anIFSM
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
102
18
80
10
107
100
-55 to +125
120
200
V
42 15.1
56
70
115
105
55
140
60
80
100
150
200
V
23.7
40
120
80
115
65
150
V
140
1.0
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typ
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum DC Blocking Voltage
3. Surge current waveform per Figure 3.
C (pF)
30
A
A
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.