WILLAS FM120-M+ SESDU5V0WB THRU FM1200-M+ Transient Voltage Suppressors for ESDRECTIFIERS Protection 1.0A SURFACE MOUNT SCHOTTKY BARRIER -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. DESCRIPTION • Low power loss, high efficiency. low forward voltage drop. • High current capability, The SESDU5V0WB is designed to protect voltage sensitive • High surge capability. components from ESD. Excellent clamping • Guardring for overvoltage protection. capability, low leakage, switching. • Ultra high-speed and fast response time provide best in class protection on designs that • Silicon epitaxial planar chip, metal silicon junction. are exposed to ESD. Because of its small size, it is suited for use in parts meet environmental standards of • Lead-free MIL-STD-19500 /228 digital cameras and many other portable cellular phones, MP3 players, • RoHS product for packing code suffix "G" applications where board space is at a premium. Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) WBFBP-02C 0.012(0.3) Typ. (1.0×0.6×0.5) unit: mm 0.071(1.8) 0.056(1.4) Mechanical data 0.040(1.0) 0.024(0.6) FEATURES • Epoxy : UL94-V0 rated flame retardant Molded plastic, • Case :Voltage: z Stand−off 5 V SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 z Low Leakage z z z z z 0.031(0.8) Typ. Method 2026 Response Time is Typically < 1 ns Dimensions in inches and (millimeters) • Polarity : Indicated by cathode band ESD Rating of Class 3 (> 12 kV) Per Human Body Model • Mounting Position : Any IEC61000−4−2 Level 4 ESD Protection • Weight : Approximated 0.011 gram These are Pb−Free Devices MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Pb-Free package is available Ratings at product 25℃ ambient temperature unless otherwise RoHS for packing code suffix ”G” specified. Single phase half wave, 60Hz, resistive of inductive load. Halogen free product for packing code suffix “H” For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Marking Code Maximum Recurrent Peak Reverse Voltage Maximum Ratings Maximum RMS Voltage @Ta=25℃ Maximum DC Blocking Voltage Parameter Maximum Average Forward Rectified Current IEC61000−4−2(ESD) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) ESD voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V VRMS 14 21 28 35 42 56 70 105 140 V VDC 20 30 40 50 60 100 150 200 V IO IFSM Symbol Air/ Contact Storage Temperature Range Thermal resistance junction−to−ambient CHARACTERISTICS -55 to +125 TSTG Junction storage range @T A=125℃ Rated DC and Blocking Voltage temperature Unit ±15 kV 12 kV 30 40 120400 PD 100 A A ℃ V -55 to +150 mW - 65 to +175 1250 ℃/W RΘJA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A VF Lead solder temperature − DC maximum (10 second duration) Maximum Average Reverse Current at @T A=25℃ 80 Limit 1.0 Per Human Body Model RΘJA Per Machine Model CJ Operating Temperature Range Total power dissipation on FR-5 board (NoteTJ1) 0.031(0.8) Typ. IR 0.50 TL 0.70 Tj, Tstg 260 0.85 0.5 -55 ~ +150 10 ℃ 0.9 0.92 V ℃ m Stresses NOTES: exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. 1- Measured at 1 MHZ andabove applied the reverse voltage of 4.0 VDC. Functional operation Recommended. Operating Conditions is not implied. Extended exposure to 2- Thermal above Resistance Junction to Ambient stresses theFrom Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. 2012-09 2012-06 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS Transient Voltage Suppressors for ESDRECTIFIERS Protection-20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER FM120-M+ SESDU5V0WB THRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. epitaxial planar chip, silicon junction. • Silicon ELECTRICAL CHARACTERISTICS (Tametal = 25°C unless otherwise noted) • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 packing code suffix "G" Symbol • RoHS product for Parameter Halogen free product for packing code suffix "H" IPP Mechanical data Maximum Reverse Peak Pulse Current VC flame retardant • Epoxy : UL94-V0 rated PP Working Peak plastic, Reverse Voltage : Molded SOD-123H • Case , Maximum :Plated Reverse Leakagesolderable Current @per VRWM • Terminals terminals, MIL-STD-750 0.040(1.0) 0.024(0.6) Clamping Voltage @ I VRWM IR 0.031(0.8) Typ. 0.031(0.8) Typ. BreakdownMethod Voltage2026 @ IT VBR • Polarity : Indicated by cathode band Test Current • Mounting Position : Any Forward Current • Weight : Approximated 0.011 gram IT IF VF Dimensions in inches and (millimeters) Forward Voltage @ IF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Peak Power Dissipation Ppk Ratings atMax. 25℃Capacitance ambient temperature otherwise specified. @VR=0unless and f =1MHz Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted) RATINGS Marking Code Device* (V) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH IR (μA) VRWM Device Marking @ VVRWM RRM Max Maximum DC Blocking Voltage AE 5 SESDU5V0WB VBR (V) 12 13 @ IT(Note 20 302) VC (V) IT MAX 14 15 16 18 （mA) 50 IPP(A) 60 @Max80 IPP 40 VRMS Max 14 Min 21 Max 28 - 35 1 VDC 20 5.4 30 40 50 9.4 IO Peak Forward Surge Current 8.3 mstest single half sine-wave 2. VBR is measured with a pulse current IT at an ambient temperature of 25°C. IFSM Maximum Average Forward Rectified Current 1 - 1 superimposed on rated load (JEDEC method) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range Max56 80 1.0 30 *Other voltages available upon request. Typical Thermal Resistance (Note 2) 42 60 10 40 120 -55 to +125 C (pF)@ 10 115 V100 R=0V,f=1MHz 150 120 200 70 Typ 105 140 100 150 200 0.5 -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 10 NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-09 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP.