WILLAS SESDBV5V0WB

WILLAS
FM120-M+
SESDBV5V0WB
THRU
FM1200-M+
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection-20V- 200V
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
DESCRIPTION
• High current capability, low forward voltage drop.
The SESDBV5V0WB
is designed to protect voltage sensitive
• High surge capability.
Guardring
for
overvoltage
•
components from ESD. Excellent protection.
clamping capability, low leakage,
• Ultra high-speed switching.
and fast response
time provide
best in class protection on designs that
planar chip, metal silicon junction.
• Silicon epitaxial
are exposed
to ESD.parts
Because
of its small standards
size, it isofsuited for use in
meet environmental
• Lead-free
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
WBFBP-02C
0.071(1.8)
0.056(1.4)
(1.0*0.6*0.5)
unit:mm
MIL-STD-19500 /228
cellular phones,
MP3 players,
cameras
and many other portable
for packingdigital
code suffix
"G"
• RoHS product
product
for packing
suffix "H"
applicationsHalogen
wherefree
board
space
is at code
a premium.
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
FEATURES
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Reverse Working (Stand-Off) Voltage: 5.0 V
Method 2026
Low Leakage
Dimensions in inches and (millimeters)
• Polarity : Indicated by cathode band
Response
Time
is
Typically
<
1
ns
• Mounting Position : Any
ESD •Rating
Class 3 (> 0.011
10 kV)
Per Human Body Model
Weight of
: Approximated
gram
IEC61000−4−2 Level 4 ESD Protection
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pb-Free package is available
Ratings at 25℃ ambient temperature unless otherwise specified.
RoHS
product
for packing
code
suffix ”G”
Single
phase
half wave,
60Hz, resistive
of inductive
load.
z
z
z
z
z
z
capacitive
load,product
derate current
by 20% code suffix “H”
Halogen
free
for packing
For
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Ratings
DC Blocking@Ta=25℃
Voltage
Maximum
IO
IFSM
Maximum Average Forward Rectified Current
Parameter
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IEC61000−4−2(ESD)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
ESD
Voltage
Operating
Temperature Range
Storage Temperature Range
CJ
1.0
Limit
30
Symbol
±5
Air
Contact
40
±5
120
-55 Model
to +125
PerTJHuman Body
TSTG
Per Machine Model
10
Unit
kV
℃
-55 kV
to +150
- 65 to
+175
400
V
100
mW
Total Power Dissipation
on FR-5 Board (Note
1)
PD
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
Maximum Forward Voltage at 1.0A DC
Thermal Resistance Junction−to−Ambient
VF
Maximum Average Reverse Current at @T A=25℃
0.50
IR
@T A=125℃
Rated
DC Blocking
Voltage
Lead
Solder
Temperature
− Maximum
(10 Second Duration)
NOTES:
Junction and Storage Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.70
RΘJA
TL
Tj, Tstg
1250
0.5
10260
-55 ~ +150
0.85
℃/W
0.9
U
0.92
℃
m
℃
Stresses
exceeding
maximum
ratings
may damage the device. Maximum ratings are stress ratings only.
2- Thermal
Resistance
From Junction
to Ambient
Functional
operation above the recommended. Operating conditions is not implied. Extended exposure to
stresses above the recommended operating conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
2012-06
2012-09
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
SESDBV5V0WB
THRU
Transient
Voltage
Suppressors
for ESDRECTIFIERS
Protection-20V- 200V
FM1200-M+
1.0A SURFACE
MOUNT
SCHOTTKY BARRIER
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
ELECTRICAL
CHARACTERISTICS
(Tavoltage
= 25°Cdrop.
unless otherwise noted)
capability, low forward
• High current
• High surge capability.
• Guardring for overvoltage protection.
Symbol
Parameter
• Ultra high-speed switching.
epitaxial planar
chip,Peak
metalPulse
silicon
junction.
IPP • Silicon Maximum
Reverse
Current
• Lead-free parts meet environmental standards of
VC
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Clamping/228
Voltage @ IPP
MIL-STD-19500
for packing code suffix "G"
• RoHS product
VRWM
Working
Peak Reverse Voltage
Halogen free product for packing code suffix "H"
IR
Maximum data
Reverse Leakage Current @ VRWM
Mechanical
0.040(1.0)
0.024(0.6)
VBR• Epoxy :Breakdown
Voltage
IT
UL94-V0 rated
flame@
retardant
IT • Case : Molded
Test Current
plastic, SOD-123H
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
,
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
unless otherwise
noted)
MAXIMUM
RATINGS AND
ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient temperature unless
otherwise
specified.
VRWM
IR(μA)
VBR(V)@IT
Single phase half wave, 60Hz,Device
resistive of inductive load.
(V)
(Note2)
Device*
@VRWM
For capacitive load, derate current
by 20%
Marking
RATINGS
SESDBV5V0WB
Marking
Code
Max
HB
5
Maximum
Recurrentavailable
Peak Reverse
Voltage
*Other voltages
upon
request.
2. VBR isRMS
measured
Maximum
Voltage with
Max
Min
Max
1
5.6
12
20
138
30
IT
(mA)
C(pF)@
VC (V)
@IPP=5A
-
VR=0V,f=1MHz
-
Typ
VRRM
141
40
1510
50
16
60
a pulse test current IT atVRMS
an ambient
of
14 temperature
21
2825℃. 35
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
Max
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
20
30
40
50
2
-
18
80
10
100
115
150
120
200
V
42
56
70
105
140
V
60
80
100
150
200
V
1.0
30
40
120
-55 to +125
℃
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.5
0.9
0.92
V
10
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-09
2012-06
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.